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NRVB120ESF PDF даташит

Спецификация NRVB120ESF изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Surface Mount Schottky Power Rectifier».

Детали детали

Номер произв NRVB120ESF
Описание Surface Mount Schottky Power Rectifier
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NRVB120ESF Даташит, Описание, Даташиты
MBR120ESF, NRVB120ESF
Surface Mount
Schottky Power Rectifier
Plastic SOD123 Package
This device uses the Schottky Barrier principle with a large area
metaltosilicon power diode. Ideally suited for low voltage, high
frequency rectification or as free wheeling and polarity protection
diodes in surface mount applications where compact size and weight
are critical to the system. This package also provides an easy to work
with alternative to leadless 34 package style. Because of its small size,
it is ideal for use in portable and battery powered products such as
cellular and cordless phones, chargers, notebook computers, printers,
PDAs and PCMCIA cards. Typical applications are ACDC and
DCDC converters, reverse battery protection, and “Oring” of
multiple supply voltages and any other application where performance
and size are critical.
Features
Guardring for Stress Protection
Low Leakage
150°C Operating Junction Temperature
Epoxy Meets UL 94 V0 @ 0.125 in
Package Designed for Optimal Automated Board Assembly
ESD Rating:
Human Body Model = 3B
Machine Model = C
NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AECQ101
Qualified and PPAP Capable
These Devices are PbFree and are RoHS Compliant*
Mechanical Characteristics
Device Marking: L2E
Polarity Designator: Cathode Band
Weight: 11.7 mg (approximately)
Case: Epoxy, Molded
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERES
20 VOLTS
SOD123FL
CASE 498
MARKING DIAGRAM
L2EMG
G
L2E = Specific Device Code
M = Date Code
G = PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
MBR120ESFT1G
NRVB120ESFT1G
MBR120ESFT3G
NRVB120ESFT3G
Package
SOD123FL
(PbFree)
SOD123FL
(PbFree)
SOD123FL
(PbFree)
SOD123FL
(PbFree)
Shipping
3,000/
Tape & Reel **
3,000/
Tape & Reel **
10,000 /
Tape & Reel ***
10,000 /
Tape & Reel ***
** 8 mm Tape, 7” Reel
*** 8 mm Tape, 13” Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
May, 2013 Rev. 4
1
Publication Order Number:
MBR120ESFT1/D









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NRVB120ESF Даташит, Описание, Даташиты
MBR120ESF, NRVB120ESF
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(At Rated VR, TL = 140°C)
Peak Repetitive Forward Current
(At Rated VR, Square Wave, 20 kHz, TL = 125°C)
NonRepetitive Peak Surge Current
(NonRepetitive peak surge current, halfwave, single phase, 60 Hz)
VRRM
VRWM
VR
IO
IFRM
IFSM
20
1.0
2.0
40
V
A
A
A
Storage Temperature
Tstg 65 to 150
°C
Operating Junction Temperature
TJ 65 to 150 °C
Voltage Rate of Change (Rated VR, TJ = 25°C)
dv/dt
10,000
V/ms
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance JunctiontoLead (Note 1)
Thermal Resistance JunctiontoLead (Note 2)
Thermal Resistance JunctiontoAmbient (Note 1)
Thermal Resistance JunctiontoAmbient (Note 2)
1. Mounted with minimum recommended pad size, PC Board FR4.
2. Mounted with 1 in. copper pad (Cu area 700 mm2).
Symbol
Rtjl
Rtjl
Rtja
Rtja
Value
26
21
325
82
Unit
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage (Note 3), See Figure 2
((IIFF
=
=
0.1
1.0
A)
A)
(IF = 2.0 A)
Maximum Instantaneous Reverse Current (Note 3), See Figure 4
(VR = 20 V)
(VR = 10 V)
(VR = 5.0 V)
3. Pulse Test: Pulse Width 250 ms, Duty Cycle 2%.
Symbol
VF
IR
Value
TJ = 25°C
0.455
0.530
0.595
TJ = 100°C
0.360
0.455
0.540
TJ = 25°C
10
1.0
0.5
TJ = 100°C
1600
500
300
Unit
V
mA
http://onsemi.com
2









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NRVB120ESF Даташит, Описание, Даташиты
10
TJ = 150°C
TJ = 100°C
1.0
MBR120ESF, NRVB120ESF
TJ = 25°C
TJ = 40°C
10
TJ = 150°C
TJ = 100°C
1.0
TJ = 25°C
0.1
0.2
0.4
0.6 0.8
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
0.1
0.2
0.4
0.6 0.8
VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE
(VOLTS)
Figure 2. Maximum Forward Voltage
100E3
10E3
1E3
100E6
10E6
1E6
100E9
10E9
0
TJ = 150°C
TJ = 100°C
TJ = 25°C
5.0 10
15
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Reverse Current
100E3
10E3
1E3
100E6
10E6
1E6
100E9
10E9
20 0
TJ = 150°C
TJ = 100°C
TJ = 25°C
5.0 10 15
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Maximum Reverse Current
20
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
25
dc freq = 20 kHz
SQUARE
WAVE
Ipk/Io = p
Ipk/Io = 5
Ipk/Io = 10
Ipk/Io = 20
45 65 85 105 125 145
TL, LEAD TEMPERATURE (°C)
Figure 5. Current Derating
165
0.7
0.6
SQUARE
WAVE
Ipk/Io = p
0.5
Ipk/Io = 5
0.4
Ipk/Io = 10
0.3
Ipk/Io = 20
0.2
dc
0.1
0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
IO, AVERAGE FORWARD CURRENT (AMPS)
Figure 6. Forward Power Dissipation
1.6
http://onsemi.com
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Номер в каталогеОписаниеПроизводители
NRVB120ESFSurface Mount Schottky Power RectifierON Semiconductor
ON Semiconductor

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