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IAM-93516 PDF даташит

Спецификация IAM-93516 изготовлена ​​​​«AVAGO» и имеет функцию, называемую «High Linearity Integrated GaAs Mixer».

Детали детали

Номер произв IAM-93516
Описание High Linearity Integrated GaAs Mixer
Производители AVAGO
логотип AVAGO логотип 

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IAM-93516 Даташит, Описание, Даташиты
IAM - 93516
High Linearity Integrated GaAs Mixer
Data Sheet
Description
Applications
AvagoTechnologies’ IAM-93516isahighlinearityGaAsFET
Mixer using 0.5um enhancement mode pHEMT technology.
This device houses in a 3x3 LPCC package. The IAM-93516
has a built-in LO buffer amplifier and an IF amplification
stage that serve as an ideal solution for reducing board
space and delivering excellent high IIP3, gain and isolation
with a low LO drive power. The device is designed with a
differential configuration to provide good noise immunity.
The LO port is 50 ohm matched and can be driven differ-
ential or single ended. An interstage match is introduced
between the mixer and amplifier stage to allow device
tuning at the desired RF and LO frequency. The interstage
match can be a simple low pass, high pass or intermedi-
ate frequency trap. The amplifier output port is 200 ohm
matched and fully differential. The simple matching at
the RF port provides for optimum input return loss, noise
figure and IIP3 performance.
The IAM-93516 is ideally suited for frequency down con-
version for base station radio card receiver, microwave link
receiver, MMDS, modulation and demodulation for receiver
and general purpose resistive FET mixer, which require high
linearity. All devices are 100% RF and DC tested.
• Frequency down converter for base station radio card,
microwave link transceiver, and MMDS
• Modulation and demodulation for receiver
• General purpose resistive FET mixer for other high
linearity applications
Features
• DC =5V @ 111mA (Typ.)
• RF =1.91 GHz, PinRF = -10 dBm;
• LO =1.7 GHz, PinLO = 0 dBm;
• IF = 210 MHz unless otherwise specified
• High Linearity: 23.1 dBm IIP3(typ)
• Conversion Gain: 9.4 dB typical
• Low Noise Figure: 11.6 dB
• Wide band operation:
• 400-3000 MHz RF & LO input
• 70 – 300 MHz IF output
• Fully differential or single ended operation
• High P1dB: 19.3 dB typical
• Consistent RF performance over LO Power
• Low current consumption: 5V@ 111mA typical
• Excellent uniformity in product specifications
• 3mm x 3mm x 0.9mm LPCC package
• MTTF > 300 years[1]
• MSL-1 and Lead-free.









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IAM-93516 Даташит, Описание, Даташиты
Pin Connections and Package Marking
Top View
Note:
Package marking provides orientation and identification
“M2” = Device Code
“X” = Month code indicates the month of manufacture
+VDD 
Interstage Match
MIX_OUT+   RF+ 1 IFA_IN+

LO+
LO Buffer

LO --
Mixer
pF
0 ohm
pF
Amplifier
+VDD
1
IF+
1
1
IF -
MIX_OUT - 10 11 RF - 1 IFA_IN -
Interstage Match
1.0 Absolute Maximum Ratings [1]
Symbol
Parameter
VD
PinRF
PinLO
TCH
TSTG
qch_b
Supply Voltage [2]
CW RF Input Power [2]
CW LO Input Power [2]
Channel Temperature
Storage Temperature
Thermal Resistance [4]
Units
V
dBm
dBm
°C
°C
°C/W
Absolute maximum
7
30
18
150
-65 to 150
39
Notes:
1. Operation of this device above any one of these parameters may cause permanent damage.
2. Determined at DC quiescent conditions and TA = 25°C.
3. Board (package belly) temperature TB is 25°C. Derate 25 mW/°C for TB > 130 °C.
4. Channel-to-board thermal resistance measured using Infra Red Imaging Method and 150o C Liquid Crystal Measurement method.
2.0 Product Consistency Distribution Charts [5,6]
00
00 Stdev=0.
- Std
00
+ Std
100
0
10 10 10 110 111 11 11 11
Id
Figure 1. ID (mA) [7] Nominal = 111.2mA
10
10 Stdev = 0.1
10
- Std
0
+  Std
0
0
0
. .0 . . . .
10
10 Stdev = 0.
10
0 - Std
0
0
0
1 

+ Std
 
Figure 2. GAIN (dB) [8] Nominal = 9.4dB
Figure 3. IIP3 (dBm) [8] Nominal = 23.1dBm










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IAM-93516 Даташит, Описание, Даташиты
3.0 IAM-93516 Electrical Specifications[6,8]
TA = 25oC, DC = 5V, RF Freq = 1.91GHz, PinRF = -10dBm, LO Freq = 1.7GHz, PinLO = 0dBm (unless otherwise specified)
Symbol Parameter and Test Condition
Units
Min.
Typ
Max.
Id [7] Device Current
mA
95.0
111.2
125.0
GC
IIP3 [8]
Conversion Gain
Output Third Order Intercept Point
dB 7.9 9.4 10.9
dBm 20.5 23.1 -
NF SSB Noise Figure
dB -
11.6 -
P1dB
Output Power at 1dB Gain Compression
dBm
-
19.3 -
RLRF
RLLO
RLIF
ISOLL-R
ISOLL-I
ISOLR-L
RF Port Return Loss
LO Port Return Loss
IF Port Return Loss
LO-RF Isolation
LO-IF Isolation
RF-IF Isolation
dB -
dB -
dB -
dB -
dB -
dB -
12.0 -
20.0 -
11.0 -
26.0 -
20.0 -
32.0 -
Notes:
5. Distribution data sample size is 510 samples taken from 3 different wafers lots. Future wafers allocated to this product may have nominal val-
ues anywhere between the upper and lower limits.
6. Measurements were made on a production test board, which represents a trade-off between optimal Gain, IIP3, NF, P1dB and isolation. Board
losses of 0.1dB at the RF input and IF amplifier output have been compensated. Balun loss of 0.57dB which was obtained from the Toko’s sup-
plied s-parameter file is also compensated. The total IF amplifier output loss is 0.67dB.
7. The device current is measured without LO signal. At LO=0dBm, the current reduces by around 6 to 7mA.
8. Gain, P1dB, isolation and return loss test conditions: FRF =1.91GHz, FLO = 1.7GHz, FIF = 210MHz, PinRF = -10dBm, PinLO = 0dBm.
IIP3 test condition: FRF1 = 1.91GHz, FRF2 = 1.89GHz, FLO = 1.7GHz, PinRF = -10dBm, PinLO = 0dBm.
4.0 IAM-93516 Typical Performance[9,10]
TA = 25oC, DC = 5V, RF Freq = 1.91GHz, PinRF = -10dBm, LO Freq = 1.7GHz (unless otherwise specified)
1nH nH  Ohm
1pF
LO +
1.nH
RF
1.pF
LO -
.nH
.nH
0.pF 1.pF
Interstage Match
0nH
1000pF
Balun Transformer
Toko BF
1DB-101
IF
1000pF
Interstage Match
1nH
nH  Ohm
1pF
0.pF 1.pF
0nH
Figure 4. IAM-93516 demoboard schematic optimally tuned at FRF = 1.91GHz and FLO = 1.7GHz











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