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AMMC-3040 PDF даташит

Спецификация AMMC-3040 изготовлена ​​​​«AVAGO» и имеет функцию, называемую «Double-Balanced Mixer».

Детали детали

Номер произв AMMC-3040
Описание Double-Balanced Mixer
Производители AVAGO
логотип AVAGO логотип 

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AMMC-3040 Даташит, Описание, Даташиты
AMMC-3040
18 - 36 GHz Double-Balanced Mixer
with Integrated LO Amplifier/Multiplier
Data Sheet
Chip Size: 2520 x 760 µm (99.2 x 29.9 mils)
Chip Size Tolerance: ± 10 µm (± 0.4 mils)
Chip Thickness: 100 ± 10 µm (4 ± 0.4 mils)
Pad Dimensions: 75 x 75 µm (3 ± 0.4 mils)
Description
The AMMC-3040 is a broadband Double-Balanced Mixer
(DBM) with an integrated high-gain LO amplifier. This
MMIC can be used as either an up converter or down
converter in microwave or millimeter wave applications.
If desired, the LO amplifier can be biased to function as a
frequency multiplier to enable second harmonic mixing
of the LO input. The mixer section ofthe AMMC-3040
is fabricated using a suspended metal system to create
a unique, broadside-coupled balun structure (patent
pending) to achieve exceptional bandwidth. The MMIC
provides repeatable conversion loss without tuning, mak-
ing it highly suitable for automated assembly processes.
For improved reliability and moisture protection, the die
is passivated at the active areas.
AMMC-3040 Absolute Maximum Ratings[1]
Symbol Parameters/Conditions
Units Min. Max.
V D1, 2, 3, 4
V G1, 2, 3, 4
Idd
Tch
Tb
Tstg
T max
Positive Drain Voltage
Gate Voltage
Total Drain Current
Operating Channel Temp.
Operating Backside Temp.
Storage Case Temp.
Maximum Assembly Temp.
(60 sec max)
V
V -3.0
mA
°C
°C -55
°C -65
°C
5
0.5
550
+160
+165
+300
Note:
1. Operation in excess of any one of these conditions may result in
permanent damage to this device.
Features
  High IIP3: +23 dBm
  Wide bandwidth
  RF: 18-36 GHz
LO: 18-36 GHz
  IF: DC-3 GHz
  Fundamental or subharmonic mixing
  Up or down converter
  Conversion loss: 9.5 dB
  P1dB: +17 dBm
  Low LO drive power: +2 dBm
  Usable to 42 GHz
Applications
  Point-to-point radio
  LMDS
  SATCOM
Note: These devices are ESD sensitive. The following precautions are strongly recommended:
Ensure that an ESD approved carrier is used when dice are transported from one destination to another.
Personal grounding is to be worn at all times when handling these devices.









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AMMC-3040 Даташит, Описание, Даташиты
AMMC-3040 DC Specifications/Physical Properties[1]
Symbol
Parameters and Test Conditions
Units
Min.
Typical
Max.
V D1, 2, 3, 4
Drain Supply Operating Voltage
V 2 3.5 5
Id1 First Stage Drain Supply Current,
Vdd = 3.5 V, Vg1 = -0.5 V
mA
50
ID2, 3, 4
Total Drain Supply Current for Stages 2, 3 and 4
(Vdd = 3.5 V, Vgg = -0.5 V)
mA
225
V G1, 2, 3, 4
Gate Supply Operating Voltages (Idd = 250 mA)
V
-0.5
Vp Pinch-Off Voltage (Vdd = 3.5 V, Idd < 10 mA
V
-1.5
θch-b
Thermal Resistance[2] (Backside Temp. Tb = 25°C)
°C/W
49
Notes:
1. 
2. 
MCheaansnuerel-dtoin-bwacakfesridfeorTmhewrmithalTRcheucskis=ta2n5c°eC.(θ(Ecxhc-ebp)t=θ5c8h°-Cb/sΩ.)
at
Tchannel
(Tc)=150°C
as
measured
using
the
liquid
crystal
method.
Thermal
Resis-
tance at backside temperature (Tb) = 25 °C calculated from measured data.
AMMC-3040 RF Specifications
Zo = 50 Ω, Tb = 25°C, IF Output = 2 GHz, LO Input Power = +2 dBm, RF Input Power = -20 dBm, except as noted.
Vdd = 3.5 V,
Idd = 250 mA
Vdd = 4.5 V,
Idd = 150 mA
Symbol
Parameters and Test Conditions
Units Typ.
Max. Typ.
Lc Conversion Loss, Down Conversion[1]
dB 9.5 12 10
Lc Conversion Loss, Up Conversion[2]
dB 10 10.5
ISOLL-R
P-1 dB
LO - RF Isolation at RF Frequency = 22 GHz[3]
Input Power at 1 dB Conversion Loss
Compression, Down Conversion
dB
dBm
31
17
32
17
IIP3 Input 3rd Order Intercept Point,
Down Conversion at RF Frequency = 22 GHz[4]
dBm
23
22
Notes:
1.  100% on-wafer RF testing is done at RF frequency = 18, 22, and 32 GHz.
2.  IF Input = 2 GHz, RF Input Power = -20 dBm, RF freq = LO + IF.
3.  Does not include LO amplifier gain of ~20 dB.
4.  ∆f = 2 MHz, RF Input Power = -5 dBm.
AMMC-3040 Typical Performance
Zo = 50 Ω, Tb = 25°C, IF = 2 GHz, LO Input Power = +2 dBm, RF Input Power = -20 dBm, except as noted.
14
12
10
8
6
4
LO = -4 dBm
LO = 0 dBm
LO = 4 dBm
2
0
20 22 24 26 28 30 32 34 36 38 40 42
RF FREQUENCY (GHz)
Figure 1. Conversion loss,
Id = 250 mA, LO freq = RF
up conversion.
+ IF
Vd
=
3.5
V,

14
13
LO = - 4 dBm
LO = 0 dBm
LO = 4 dBm
12
11
10
9
8
20 22 24 26 28 30 32 34 36 38 40 42
RF FREQUENCY (GHz)
Figure 2. Conversion loss, down conversion.
Vd = 3.5 V, Id = 250  mA, LO freq. = RF – IF









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AMMC-3040 Даташит, Описание, Даташиты
14
LO = 0 dBm
13 LO = 2 dBm
LO = 4 dBm
12
11
10
9
8
18 20 22 24 26 28 30 32 34
RF FREQUENCY (GHz)
Figure 3. Conversion loss,
Id = 150 mA, LO freq = RF
up conversion.
+ IF
Vd
=
4.5
V,
12
23 GHz
11 35 GHz
10
9
8
7
6
-4 -3 -2 -1 0 1 2 3 4 5 6
RF FREQUENCY (GHz)
Figure 5. Conversion loss vs. LO input power, up conversion.
Vd = 3.5 V, Id = 250 mA, LO freq = RF + IF
20
18
16
14
LO = -2 dBm
LO = 0 dBm
12 LO = 2 dBm
LO = 4 dBm
10
18 20 22 24 26 28 30 32 34 36 38 40
RF FREQUENCY (GHz)
Figure 7. Input power at 1 dB conversion loss compression,
down conversion. Vd = 3.5 V, Id = 250 mA, LO freq = RF - IF
14
LO = 0 dBm
13 LO = 2 dBm
LO = 4 dBm
12
11
10
9
8
18 20 22 24 26 28 30 32 34
RF FREQUENCY (GHz)
Figure 4. Conversion loss, down conversion.
Vd = 4.5 V, Id = 150 mA, LO freq = RF - IF
12
11
10
9
8 23 GHz
35 GHz
7
6
-4 -3 -2 -1 0 1 2 3 4 5 6
LO INPUT POWER (dBm)
Figure 6. Conversion loss vs. LO input power, down conversion.
Vd = 3.5 V, Id = 250 mA, LO freq = RF - IF
25
20
15
10
5
0
18 20 22 24 26 28 30 32 34 36 38 40
RF FREQUENCY (GHz)
Figure 8. Input power at 1 dB conversion loss compression,
up conversion. Vd = 3.5 V, Id = 250 mA, LO freq = RF + IF











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