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ACPM-5201 PDF даташит

Спецификация ACPM-5201 изготовлена ​​​​«AVAGO» и имеет функцию, называемую «Power Amplifier Module».

Детали детали

Номер произв ACPM-5201
Описание Power Amplifier Module
Производители AVAGO
логотип AVAGO логотип 

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ACPM-5201 Даташит, Описание, Даташиты
ACPM-5201
UMTS Band1 (1920-1980MHz) 3x3mm Power Amplifier Module
Data Sheet
Description
The ACPM-5201 is a fully matched 10-pin surface mount
module developed for UMTS Band1. This power amplifier
module operates in the 1920-1980MHz bandwidth. The
ACPM-5201 meets stringent UMTS linearity requirements
up to 27.5dBm output power. The 3mmx3mm form factor
package is self contained, incorporating 50ohm input and
output matching networks. The PA also contains internal
DC blocking capacitors for RF input and output ports.
The ACPM-5201 features 5th generation of CoolPAM
(CoolPAM5) circuit technology which supports 3 power
modes – active bypass, mid power and high power modes.
The CoolPAM is stage bypass technology enhancing PAE
(power added efficiency) at low and medium power
range. The active bypass feature is added to CoolPAM5 to
enhance the PAE further at low output range and it enables
the PA to have exceptionally low quiescent current. It
dramatically saves the average power consumption and
accordingly extends the talk time of mobiles and prolongs
a battery life.
A directional coupler is integrated into the module and
both coupling and isolation ports are available exter-
nally, supporting daisy chain. The integrated coupler has
excellent coupler directivity, which minimizes the coupled
output power variation or delivered power variation
caused by the load mismatch from the antenna. The
coupler directivity, or the output power variation into
the mismatched load, is critical to the TRP and SAR per-
formance of the mobile phones in real field operations as
well as compliance tests for the system specifications.
The ACPM-5201 has integrated on-chip Vref and on-module
bias switch as the one of the key features of the CoolPAM-
5, so an external constant voltage source is not required,
eliminating the external LDO regulators and switches
from circuit boards of mobile devices. It also makes the PA
fully digital-controllable by the Ven pin that simply turns
the PA on and off from the digital control logic input from
baseband chipsets. All of the digital control input pins
such as the Ven, Vmode and Vbp are fully CMOS compat-
ible and can operate down to the 1.35V logic. The current
consumption by digital control pins is negligible.
The power amplifier is manufactured on an advanced
InGaP HBT (hetero-junction Bipolar Transistor) MMIC
(microwave monolithic integrated circuit) technology
offering state-of-the-art reliability, temperature stability
and ruggedness.
Features
Thin Package (1.0mm typ)
Excellent Linearity
3-mode power control with Vbp and Vmode
– Bypass / Mid Power Mode / High Power Mode
High Efficiency at max output power
10-pin surface mounting package
Internal 50ohm matching networks for both RF input
and output
Integrated coupler
– Coupler and Isolation ports for daisy chain
Green (Lead-free and RoHS compliant)
Applications
UMTS Band1
Ordering Information
Part Number
ACPM-5201-TR1
ACPM-5201-BLK
Number of Devices
1000
100
Container
178mm (7”)
Tape/Reel
Bulk









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ACPM-5201 Даташит, Описание, Даташиты
Absolute Maximum Ratings
No damage assuming only one parameter is set at limit at a time with all other parameters set at or below nominal value.
Operation of any single parameter outside these conditions with the remaining parameters set at or below nominal
values may result in permanent damage.
Description
RF Input Power (Pin)
RF Output Power (Pout)
High power mode
Mid power mode
Bypass mode
DC Supply Voltage (Vcc1, Vcc2)
Enable Voltage (Ven)
Mode Control Voltage (Vmode)
Bypass Control (Vbp)
Storage Temperature (Tstg)
Min. Typ. Max. Unit
5 dBm
dBm
29
19
13
0 3.4 5.0 V
0 2.6 3.3 V
0 2.6 3.3 V
0 2.6 3.3 V
-55 25
+125
°C
Recommended Operating Condition
Description
DC Supply Voltage (Vcc1, Vcc2)
Enable Voltage (Ven)
Mode Control Voltage (Vmode)
Bypass Control Voltage (Vbp)
Operating Frequency (fo)
Ambient Temperature (Ta)
Low
High
Low
High
Low
High
Min.
3.2
0
1.35
0
1.35
0
1.35
1920
-20
Typ.
3.4
0
2.6
0
2.6
0
2.6
25
Max.
4.2
0.5
3.1
0.5
3.1
0.5
3.1
1980
85
Unit
V
V
V
V
V
V
V
MHz
°C
Operating Logic Table
Power Mode
High Power Mode
Mid Power Mode
Bypass Mode
Shut Down Mode
Ven
High
High
High
Low
Vmode
Low
High
High
Low
Vbp
Low
Low
High
Low
Pout (Rel99)
~ 27.5 dBm
~ 18 dBm
~ 12 dBm
-
Pout (HSDPA,
HSUPA MPR=0dB)
~ 26.5 dBm
~ 17 dBm
~ 11 dBm
-
2









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ACPM-5201 Даташит, Описание, Даташиты
Electrical Characteristics for WCDMA Mode
– Conditions: Vcc = 3.4V, Ven = 2.6V, Ta = 25°C, Zin/Zout = 50ohm
– Signal Configuration: 3GPP (DPCCH + 1DPDCH) Up-Link unless specified otherwise.
Characteristics
Operating Frequency Range
Gain
Power Added Efficiency
Total Supply Current
Quiescent Current
Enable Current
Mode Control Current
Bypass Control Current
Total Current in Power-down mode
Adjacent Channel
Leakage Ratio
5 MHz offset
10 MHz offset
5 MHz offset
10 MHz offset
5 MHz offset
10 MHz offset
5 MHz offset
10 MHz offset
5 MHz offset
10 MHz offset
5 MHz offset
10 MHz offset
Harmonic
Second
Suppression
Third
Input VSWR
Stability (Spurious Output)
Rx Band Noise Power (Vcc=4.2V)
GPS Band Noise Power (Vcc=4.2V)
ISM Band Noise Power (Vcc=4.2V)
Phase Discontinuity
Ruggedness
Coupling factor
Daisy Chain Insertion Loss
Pout variation on VSWR 2.5:1
Condition
High Power Mode, Pout=27.5dBm
Mid Power Mode, Pout=18dBm
Bypass Mode, Pout=12dBm
High Power Mode, Pout=27.5dBm
Mid Power Mode, Pout=18dBm
Bypass Mode, Pout=12dBm
High Power Mode, Pout=27.5dBm
Mid Power Mode, Pout=18dBm
Bypass Mode, Pout=12dBm
High Power Mode
Mid Power Mode
Bypass Mode
High Power Mode
Mid Power Mode
Bypass Mode
Mid Power Mode
Bypass Mode
Bypass
Ven=0V, Vmode=0V, Vbp=0V
High Power Mode, Pout=27.5dBm
Min.
1920
24
15
9
34.2
16
11.8
80
10
1
High Power Mode, Pout=26.5dBm
(HSDPA, HSUPA MPR=0dB)
Mid Power Mode, Pout=18dBm
High Power Mode, Pout=17dBm
(HSDPA, HSUPA MPR=0dB)
Bypass Mode, Pout=12dBm
Bypass Mode, Pout=11dBm
(HSDPA, HSUPA MPR=0dB)
High Power Mode, Pout=27.5Bm
VSWR 5:1, All phase
High Power Mode, Pout=27.5dBm
High Power Mode, Pout=27.5dBm
High Power Mode, Pout=27.5dBm
High Power Mode, Pout=27.5dBm
bypass modemid power mode,
at Pout=12dBm
mid power modehigh power mode,
at Pout=18dBm
Pout<27.5dBm, Pin<5dBm, All phase
High Power Mode
RF Out to CPL port
ISO port to CPL port, Ven=Low
All phases
-1
Typ.
27
18.5
12.5
39
21.5
19.6
423
85
23
112
21
3.3
10
10
10
5
5
5
-42
-54
-40
-52
-43
-60
-41
-58
-44
-57
-42
-55
-38
-48
2.5:1
-135
-138
-140
7
10
20
0.15
3
Max.
1980
483
115
38
150
39
5.5
5
-36
-46
-35
-46
-36
-46
-36
-46
-36
-46
-36
-46
-35
-42
-60
25
25
10:1
+1
Unit
MHz
dB
dB
dB
%
%
%
mA
mA
mA
mA
mA
mA
μA
μA
μA
μA
μA
μA
μA
dBc
dBc
dBc
dBc
dBc
dBc
dBc
dBc
dBc
dBc
dBc
dBc
dBc
dBc
dBc
dBm/Hz
dBm/Hz
dBm/Hz
deg
deg
VSWR
dB
dB
dB










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