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AP85L02J PDF даташит

Спецификация AP85L02J изготовлена ​​​​«Advanced Power Electronics» и имеет функцию, называемую «N-CHANNEL ENHANCEMENT MODE POWER MOSFET».

Детали детали

Номер произв AP85L02J
Описание N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Производители Advanced Power Electronics
логотип Advanced Power Electronics логотип 

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AP85L02J Даташит, Описание, Даташиты
AP85L02H/J
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Low Gate Charge
Simple Drive Requirement
Fast Switching
Description
G
D
S
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP85L02J) is available for low-profile applications.
BVDSS
RDS(ON)
ID
25V
6mΩ
85A
G D S TO-252(H)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-case
Thermal Resistance Junction-case
Rthj-amb
Thermal Resistance Junction-ambient
G
D
S
TO-251(J)
Rating
25
± 20
85
53
310
96
0.77
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
Max.
Max.
Value
1.3
110
Unit
/W
/W
Data & specifications subject to change without notice
200227032









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AP85L02J Даташит, Описание, Даташиты
AP85L02H/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance VGS=10V, ID=40A
VGS=4.5V, ID=20A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=150oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
VDS=VGS, ID=250uA
VDS=10V, ID=40A
VDS=25V, VGS=0V
VDS=20V, VGS=0V
VGS= ± 20V
ID=40A
VDS=20V
VGS=5V
VDS=15V
ID=25A
RG=3.3Ω,VGS=10V
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
RD=0.6Ω
VGS=0V
VDS=25V
f=1.0MHz
25 - - V
- 0.037 - V/
- - 6 mΩ
- - 10 mΩ
1 - 3V
- 45 -
S
- - 1 uA
- - 25 uA
- - ±100 nA
- 49
nC
-5
nC
- 36.5
nC
- 12 - ns
- 85 - ns
- 35 - ns
- 110 - ns
- 1510 - pF
- 950 -
- 450 -
pF
pF
Source-Drain Diode
Symbol
Parameter
IS Continuous Source Current ( Body Diode )
ISM Pulsed Source Current ( Body Diode )1
VSD Forward On Voltage2
Test Conditions
VD=VG=0V , VS=1.26V
Tj=25, IS=85A, VGS=0V
Min. Typ. Max. Units
- - 85 A
- - 310 A
- - 1.26 V
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.









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AP85L02J Даташит, Описание, Даташиты
AP85L02H/J
400
T C =25 o C
350
300
V G =10V
V G =8.0V
250
V G =6.0V
200
150
V G =5.0V
100
50 V G =4.0V
0
01234567
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
150
T C =150 o C
100
50
V G =10V
V G =8.0V
V G =6.0V
V G =5.0V
V G =4.0V
0
01234567
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
10
I D =20A
9 T c =25
8
7
6
5
4
3
2 3 4 5 6 7 8 9 10 11
V GS (V)
Fig 3. On-Resistance v.s. Gate Voltage
1.8
I D =20A
1.6 V G =10V
1.4
1.2
1
0.8
0.6
-50
0 50 100
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
150










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