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Número de pieza | TLP290 | |
Descripción | GaAs Ired & Photo-Transistor | |
Fabricantes | Toshiba | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de TLP290 (archivo pdf) en la parte inferior de esta página. Total 13 Páginas | ||
No Preview Available ! TOSHIBA Photocoupler GaAs Ired & Photo-Transistor
TLP290
TLP290
Programmable Controllers
AC/DC-Input Module
Hybrid ICs
TLP290 consist of photo transistor, optically coupled to two gallium arsenide
infrared emitting diodes connected inverse parallel, and can operate directly
by AC input current
Since TLP290 is guaranteed wide operating temperature (Ta=-55 to 110 ˚C)
and high isolation voltage (3750Vrms), it’s suitable for high-density surface
mounting applications such as programmable controllers and hybrid ICs.
• Collector-Emitter voltage : 80 V (min)
• Current transfer ratio
: 50% (min)
Rank GB
: 100% (min)
• Isolation voltage
: 3750 Vrms (min)
• Guaranteed performance over -55 to 110 ˚C
• UL recognized
: UL1577, File No. E67349
• cUL approved
: CSA Component Acceptance Service No.5A,
File No. 67349
• SEMKO approved
: EN 60065: 2002, Approved no. 1200315
EN 60950-1: 2001, EN 60335-1: 2002,
Approved no. 1200315
• BSI approved
: BS EN 60065: 2002, Approved no. 9036
: BS EN 60950-1: 2006, Approved no. 9037
• Option (V4)
VDE approved: EN 60747-5-5 Certificate, No. 40009347
Maximum operating insulation voltage: 707 Vpk
Highest permissible over-voltage: 6000 Vpk
(Note) When an EN 60747-5-5 approved type is needed,
please designate the “Option(V4)”
Unit: mm
TOSHIBA
11-3C1
Weight: 0.05 g (typ.)
Pin Configuration
TLP290
14
23
1: Anode
Cathode
2: Cathode
Anode
3: Emitter
4: Collector
Construction Mechanical Rating
Creepage distance
: 5.0 mm (min)
Clearance
: 5.0 mm (min)
Insulation thickness
: 0.4 mm (min)
Start of commercial production
2012/02
1 2014-09-08
1 page I F - Ta
100
80
60
40
(Note) This curve shows
20 the maximum limit to the
input forward current.
0
-20 0 20 40 60 80
100 120
Ambient temperature Ta (˚C)
TLP290
P C - Ta
160
140
120
100
80
60
40 (Note) This curve shows the
20 maximum limit to the collector
power dissipation.
0
-20 0 20 40 60 80 100 120
Ambient temperature Ta (˚C)
IFP-DR
IF-VF
3000
1000
500
300
Pules width ≤100μs
Ta=25˚C
100
50 (Note) This curve shows the
30 maximum limit to the input
forward current (pulsed).
10
10-3
10-2
10-1
Duty cycle ratio DR
100
∆ V F / ∆ Ta - I F
-3.2
-2.8
-2.4
-2
-1.6
-1.2
-0.8
-0.4
0.1
1
10
Input forward current IF (mA)
100
100
10
110˚C
85˚C
50˚C
25˚C
1
0˚C
-25˚C
-55˚C
0.1
0.6 0.8 1 1.2 1.4 1.6 1.8
Input forward voltage VF (V)
2
IFP - VFP
1000
100
10
Pulse width ≤10μs
Repeative frequency=100Hz
Ta=25°C
1
0.6 1 1.4 1.8 2.2 2.6 3
Input forward voltage (pulsed) VFP (V)
3.4
Note: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
5 2014-09-08
5 Page TLP290
Insulation Related Specifications
Minimum creepage distance
Minimum clearance
Minimum insulation thickness
Comparative tracking index
Cr
Cl
ti
CTl
5.0mm
5.0mm
0.4mm
175
1. If a printed circuit is incorporated, the creepage distance and clearance may be reduced below this value.
(e.g. at a standard distance between soldering eye centers of 3.5mm).
If this is not permissible, the user shall take suitable measures.
2. This photocoupler is suitable for ‘safe electrical isolation’ only within the safety limit data.
Maintenance of the safety data shall be ensured by means of protective circuit.
VDE test sign: Marking on product
for EN 60747
V
: Marking on packing
for EN 60747
VDE
Marking Example: TLP290
1pin mark
Lot No.
Option(V4) mark
P290
V
Process lot No.
Type
Country of origin
e.g.) J: Japan
CTR rank mark
11 2014-09-08
11 Page |
Páginas | Total 13 Páginas | |
PDF Descargar | [ Datasheet TLP290.PDF ] |
Número de pieza | Descripción | Fabricantes |
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TLP291 | PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR | Toshiba |
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