(PDF) APA6101010002 Datasheet - 850nm Multi Mode High Power VCSEL Chip

Número de pieza	APA6101010002
Descripción	850nm Multi Mode High Power VCSEL Chip
Fabricantes	LASER ENTERPRISE
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No Preview Available ! 850nm Multi Mode High Power VCSEL Chip Specification Features  High conversion efficiency  High reliability  Small foot print Ordering Information Part Number APA6101010002 Description 850nm MM High Power VCSEL Chip Electro-Optical Characteristics All parameters at 20°C, pulsed (0.3ms on, 2.2ms period), unless otherwise noted. PARAMETERS Threshold Current SYMBOL CONDITIONS MIN TYP MAX UNIT Ith 120 mA Operating Current Iop 1000 1300 mA Operating Voltage Differential Efficiency1 Differential resistance1 Uop diff Rdiff 2.6 3.1 V 0.85 W/A 0.8 Ohm Optical Output Power 50°C Power Conversion Efficiency2 Center Wavelength P50C PCEop center 700 800 950 mW 30 35 % 840 850 865 nm Spectral Width Temperature Tuning Coefficient Beam Divergence3 -10dB d/dT FW1/e2  3 nm 0.06 nm/K 22 30 37 deg 1 Defined as slope around operating current 2 Evaluated from pulsed power measurement and cw voltage measurement 3 FW1/e2 = full width 1/e2 CONDITION Pop=900mW I=Iop I=Iop I=Iop T=50°C, I=Iop I=Iop I=Iop I=Iop I=Iop Page 1 of 3 24-Sep-14 / hpg 1 page

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