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MBR130LSFT1G Datasheet Download - ON Semiconductor

Номер произв MBR130LSFT1G
Описание Surface Mount Schottky Power Rectifier
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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MBR130LSFT1G Даташит, Описание, Даташиты
MBR130LSFT1G
Surface Mount
Schottky Power Rectifier
Plastic SOD−123 Package
This device uses the Schottky Barrier principle with a large area
metal−to−silicon power diode. Ideally suited for low voltage, high
frequency rectification or as free wheeling and polarity protection
diodes in surface mount applications where compact size and weight
are critical to the system. This package also provides an easy to work
with alternative to leadless 34 package style. Because of its small size,
it is ideal for use in portable and battery powered products such as
cellular and cordless phones, chargers, notebook computers, printers,
PDAs and PCMCIA cards. Typical applications are AC−DC and
DC−DC converters, reverse battery protection, and “Oring” of
multiple supply voltages and any other application where performance
and size are critical.
Features
Guardring for Stress Protection
Low Forward Voltage
125°C Operating Junction Temperature
Epoxy Meets UL 94 V−0
Package Designed for Optimal Automated Board Assembly
ESD Ratings: Machine Model, C
Human Body Model, 3B
NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
Mechanical Characteristics
Reel Options: MBR130LSFT1G = 3,000 per 7 in reel/8 mm tape
Device Marking: L3L
Polarity Designator: Cathode Band
Weight: 11.7 mg (approximately)
Case: Epoxy, Molded
Lead Finish: 100% Matte Sn (Tin)
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Device Meets MSL 1 Requirements
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERES, 30 VOLTS
SOD−123FL
CASE 498
MARKING DIAGRAM
L3LMG
G
L3L = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
MBR130LSFT1G SOD−123FL 3000/Tape & Reel
(Pb−Free)
NRVB130LSFT1G SOD−123FL 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
July, 2014 − Rev. 4
1
Publication Order Number:
MBR130LSFT1/D







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MBR130LSFT1G Даташит, Описание, Даташиты
MBR130LSFT1G
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
30 V
VRWM
VR
Average Rectified Forward Current (At Rated VR, TL = 117°C)
IO 1.0 A
Peak Repetitive Forward Current
(At Rated VR, Square Wave, 100 kHz, TL = 110°C)
IFRM
2.0 A
Non−Repetitive Peak Surge Current
(Non−Repetitive peak surge current, halfwave, single phase, 60 Hz)
IFSM
40 A
Storage Temperature
Operating Junction Temperature
Voltage Rate of Change (Rated VR, TJ = 25°C)
THERMAL CHARACTERISTICS
Tstg
TJ
dv/dt
−55 to 150
−55 to 125
10,000
°C
°C
V/ms
Thermal Resistance, Junction−to−Lead (Note 1)
Thermal Resistance, Junction−to−Lead (Note 2)
Thermal Resistance, Junction−to−Ambient (Note 1)
Thermal Resistance, Junction−to−Ambient (Note 2)
Rtjl 26 °C/W
Rtjl 21
Rtja 325
Rtja 82
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Mounted with minimum recommended pad size, PC Board FR4.
2. Mounted with 1 in. copper pad (Cu area 700 mm2).
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 3)
VF
TJ = 25°C TJ = 100°C
V
(IF = 0.1 A)
(IF = 0.7 A)
(IF = 1.0 A)
0.29 0.18
0.36 0.27
0.38 0.30
Maximum Instantaneous Reverse Current (Note 3)
IR
TJ = 25°C TJ = 100°C
mA
(VR = 30 V)
1.0 25
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width 250 ms, Duty Cycle 2%.
http://onsemi.com
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MBR130LSFT1G Даташит, Описание, Даташиты
MBR130LSFT1G
TYPICAL CHARACTERISTICS
10 10
1 TJ = 125°C
TJ = 100°C
TJ = 25°C
TJ = −55°C
0.1
0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
1 TJ = 125°C
TJ = 100°C
0.1
0.10
TJ = 25°C TJ = −55°C
0.20 0.30 0.40 0.50 0.60
VF, MAXIMUM INSTANTANEOUS FORWARD
VOLTAGE (VOLTS)
Figure 2. Maximum Forward Voltage
0.70
100E−3
10E−3
1E−3
100E−6
10E−6
1E−6
100E−9
10E−9
1E−9
0
TJ = 125°C
TJ = 100°C
TJ = 25°C
TJ = −55°C
10 20
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Reverse Current
1E+0
100E−3
10E−3
1E−3
100E−6
10E−6
30 0
TJ = 125°C
TJ = 100°C
TJ = 25°C
TJ = −55°C
10 20
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Maximum Reverse Current
30
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
25
dc freq = 20 kHz
SQUARE WAVE
Ipk/IO = p
Ipk/IO = 5
Ipk/IO = 10
Ipk/IO = 20
45 65 85 105 125
TL, LEAD TEMPERATURE (°C)
Figure 5. Current Derating
145
0.6
0.5
Ipk/IO = p
0.4 Ipk/IO = 5
0.3 Ipk/IO = 10
Ipk/IO = 20
0.2
SQUARE
WAVE
dc
0.1
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
IO, AVERAGE FORWARD CURRENT (AMPS)
Figure 6. Forward Power Dissipation
http://onsemi.com
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