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MBR6045WTG PDF даташит

Спецификация MBR6045WTG изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Switch Mode Power Rectifier».

Детали детали

Номер произв MBR6045WTG
Описание Switch Mode Power Rectifier
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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MBR6045WTG Даташит, Описание, Даташиты
MBR6045WTG
Switch Mode
Power Rectifier
The Switch Mode power rectifier employs the use of the Schottky
Barrier principle with a Platinum barrier metal.
Features
Dual Diode Construction; Terminals 1 and 3 May Be Connected for
Parallel Operation at Full Rating
45 V Blocking Voltage
Low Forward Voltage Drop
Guard−ring for Stress Protection and High dv/dt Capability (> 10 V/ns)
175°C Operating Junction Temperature
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
Mechanical Characteristics
Case: Epoxy, Molded
Weight: 4.3 Grams (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
MAXIMUM RATINGS
Rating
Symbol
Max
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR, TC = 125°C)
Per Diode
Per Device
Peak Repetitive Forward Current,
(Rated VR, Square Wave,
20 kHz, TC = 90°C)
Per Diode
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
Peak Repetitive Reverse Current
(2.0 ms, 1.0 kHz)
Storage Temperature Range
Operating Junction Temperature (Note 1)
Peak Surge Junction Temperature
(Forward Current Applied)
VRRM
VRWM
VR
IF(AV)
IFRM
IFSM
IRRM
Tstg
TJ
TJ(pk)
45
30
60
60
500
2.0
−65 to +175
−65 to +175
175
V
A
A
A
A
°C
°C
°C
Voltage Rate of Change
dv/dt
10,000
V/ms
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dPD/dTJ < 1/RqJA.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
60 AMPERES, 45 VOLTS
1
2, 4
3
1
2
3
TO−247
CASE 340AL
MARKING DIAGRAM
MBR6045WT
AYWWG
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
MBR6045WTG
Package
TO−247
(Pb−Free)
Shipping
30 Units/Rail
© Semiconductor Components Industries, LLC, 2014
July, 2014 − Rev. 10
1
Publication Order Number:
MBR6045WT/D









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MBR6045WTG Даташит, Описание, Даташиты
MBR6045WTG
THERMAL CHARACTERISTICS (Per Diode)
Rating
Symbol
Max Unit
Thermal Resistance, Junction−to−Case
RqJC
1.0 °C/W
ELECTRICAL CHARACTERISTICS (Per Diode)
Instantaneous Forward Voltage (Note 2)
@ IF = 30 Amps, TC = 25°C
@ IF = 30 Amps, TC = 125°C
@ IF = 60 Amps, TC = 25°C
VF Volts
0.62
0.55
0.75
Instantaneous Reverse Current (Note 2)
@ Rated DC Voltage, TC = 25°C
@ Rated DC Voltage, TC = 100°C
IR mA
1.0
50
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle < 2.0%
TYPICAL ELECTRICAL CHARACTERISTICS
1000
100
10
1
0.1
0.01
0
TC = 150°C
TC = 100°C
TC = 25°C
10 20 30 40
VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Typical Reverse Current
100
10
150°C
100°C TC = 25°C
1
50 100 200 300 400 500
600 700 800
vF, INSTANTANEOUS FORWARD VOLTAGE (mV)
Figure 2. Typical Forward Voltage
http://onsemi.com
2









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MBR6045WTG Даташит, Описание, Даташиты
MBR6045WTG
PACKAGE DIMENSIONS
E2/2
NOTE 4
D
L
2X b2
NOTE 4
E
A
E2
NOTE 3
1 23
L1
NOTE 5
A
Q
c
b4
3X b
e 0.25 M B A M
TO−247
CASE 340AL
ISSUE A
B
SEATING
PLANE
A1
NOTE 7
0.635 M B A M
P NOTE 6
S
4
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. SLOT REQUIRED, NOTCH MAY BE ROUNDED.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH.
MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE
DIMENSIONS ARE MEASURED AT THE OUTERMOST
EXTREME OF THE PLASTIC BODY.
5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY
L1.
6. P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE
TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91.
7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED
BY L1.
MILLIMETERS
DIM MIN MAX
A 4.70 5.30
A1 2.20 2.60
b 1.00 1.40
b2 1.65 2.35
b4 2.60 3.40
c 0.40 0.80
D 20.30 21.40
E 15.50 16.25
E2 4.32 5.49
e 5.45 BSC
L 19.80 20.80
L1 3.50 4.50
P 3.55 3.65
Q 5.40 6.20
S 6.15 BSC
ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended,
or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which
the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or
unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable
copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
http://onsemi.com
3
MBR6045WT/D










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