DataSheet26.com

MBR40H100WTG PDF даташит

Спецификация MBR40H100WTG изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Switch Mode Power Rectifier».

Детали детали

Номер произв MBR40H100WTG
Описание Switch Mode Power Rectifier
Производители ON Semiconductor
логотип ON Semiconductor логотип 

6 Pages
scroll

No Preview Available !

MBR40H100WTG Даташит, Описание, Даташиты
MBR40H100WTG
Switch Mode
Power Rectifier
100 V, 40 A
Features and Benefits
Low Forward Voltage
Low Power Loss/High Efficiency
High Surge Capacity
175°C Operating Junction Temperature
40 A Total (20 A Per Diode Leg)
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
Power Supply − Output Rectification
Power Management
Instrumentation
Mechanical Characteristics:
Case: Epoxy, Molded
Epoxy Meets UL 94 V−0 @ 0.125 in
Weight: 4.3 Grams (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
MAXIMUM RATINGS
Please See the Table on the Following Page
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
40 AMPERES
100 VOLTS
1
2, 4
3
1
2
3
TO−247
CASE 340AL
MARKING DIAGRAM
B40H100
AYWWG
© Semiconductor Components Industries, LLC, 2014
July, 2014 − Rev. 5
B40H100 = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
MBR40H100WTG TO−247
(Pb−Free)
30 Units/Rail
1 Publication Order Number:
MBR40H100WT/D









No Preview Available !

MBR40H100WTG Даташит, Описание, Даташиты
MBR40H100WTG
MAXIMUM RATINGS (Per Diode Leg)
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
TC = 148°C, per Diode
TC = 150°C, per Device
Peak Repetitive Forward Current
(Square Wave, 20 kHz) TC = 144°C
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
VRRM
VRWM
VR
IF(AV)
IFRM
IFSM
100
20
40
40
200
V
A
A
A
Operating Junction Temperature (Note 1)
Storage Temperature
Voltage Rate of Change (Rated VR)
Controlled Avalanche Energy (see test conditions in Figures 10 and 11)
ESD Ratings: Machine Model = C
Human Body Model = 3B
TJ
Tstg
dv/dt
WAVAL
+175
*65 to +175
10,000
400
> 400
> 8000
°C
°C
V/ms
mJ
V
THERMAL CHARACTERISTICS
Maximum Thermal Resistance − Junction−to−Case
− Junction−to−Ambient (Socket Mounted)
RqJC
RqJA
0.58 °C/W
32
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
ELECTRICAL CHARACTERISTICS
Characterisitc
Symbol Min Typ Max Unit
Instantaneous Forward Voltage (Note 2)
(IF = 20 A, TJ = 25°C)
(IF = 20 A, TJ = 125°C)
(IF = 40 A, TJ = 25°C)
(IF = 40 A, TJ = 125°C)
vF V
− 0.74 0.80
− 0.61 0.67
− 0.85 0.90
− 0.72 0.76
Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, TJ = 125°C)
(Rated dc Voltage, TJ = 25°C)
iR mA
− 2.0 10
− 0.0012 0.01
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
http://onsemi.com
2









No Preview Available !

MBR40H100WTG Даташит, Описание, Даташиты
MBR40H100WTG
TYPICAL CHARACTERISTICS
100
175°C
150°C
10
25°C
125°C
1.0
100
175°C
150°C
10
25°C
125°C
1.0
0.1
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Forward Voltage
0.1
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 2. Maximum Forward Voltage
1.0E−01
1.0E−02
1.0E−03
1.0E−04
1.0E−05
1.0E−06
1.0E−07
1.0E−08
0
TJ = 150°C
TJ = 125°C
TJ = 25°C
20 40 60 80
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Reverse Current
1.0E−01
1.0E−02
1.0E−03
1.0E−04
1.0E−05
1.0E−06
1.0E−07
1.0E−08
100 0
TJ = 150°C
TJ = 125°C
TJ = 25°C
20 40 60 80
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Maximum Reverse Current
100
32
dc
28
24 Square Wave
20
16
12
8.0
4.0
0
120
130 140 150 160 170
TC, CASE TEMPERATURE (°C)
180
Figure 5. Current Derating, Case, Per Leg
20
18 RqJA = 16°C/W
16
dc
14
12
Square Wave
10
8.0
6.0
4.0
2.0
0
0
RqJA = 60°C/W
No Heatsink
25 50
dc
Square Wave
75 100 125
150
TA, AMBIENT TEMPERATURE (°C)
175
Figure 6. Current Derating, Ambient, Per Leg
http://onsemi.com
3










Скачать PDF:

[ MBR40H100WTG.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
MBR40H100WTSchottky Barrier Rectifier ( Diode )Inchange Semiconductor
Inchange Semiconductor
MBR40H100WTPower RectifierON Semiconductor
ON Semiconductor
MBR40H100WT-FHigh Performance Schottky GenerationVishay Siliconix
Vishay Siliconix
MBR40H100WTGSwitch Mode Power RectifierON Semiconductor
ON Semiconductor

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск