DataSheet26.com

даташит BAT54T1G PDF ( Datasheet )

BAT54T1G Datasheet Download - ON Semiconductor

Номер произв BAT54T1G
Описание Schottky Barrier Diodes
Производители ON Semiconductor
логотип ON Semiconductor логотип 

1Page
		

No Preview Available !

BAT54T1G Даташит, Описание, Даташиты
BAT54T1G, SBAT54T1G
Schottky Barrier Diodes
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
Features
Extremely Fast Switching Speed
Low Forward Voltage − 0.35 Volts (Typ) @ IF = 10 mAdc
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 125°C unless otherwise noted)
Rating
Symbol Value
Unit
Reverse Voltage
Forward Power Dissipation, FR−5 Board
(Note 1)
@ TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Case
VR
PF
RqJL
30 V
400 mW
3.2 mW/°C
174 °C/W
Thermal Resistance,
Junction−to−Ambient
RqJA
492 °C/W
Forward Current (DC)
Non−Repetitive Peak Forward Current
tp < 10 msec
Repetitive Peak Forward Current
Pulse Wave = 1 sec, Duty Cycle = 66%
IF
IFSM
IFRM
200 Max
600
300
mA
mA
mA
Junction Temperature
TJ −55 to 125 °C
Storage Temperature Range
Tstg − 55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR-5 = 1.0 x 0.75 x 0.062 in.
http://onsemi.com
30 VOLT
SCHOTTKY BARRIER
DETECTOR AND SWITCHING
DIODES
1
CATHODE
2
ANODE
2
SOD−123
CASE 425
1 STYLE 1
MARKING DIAGRAM
1
SBM G
G
SB = Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
BAT54T1G
SOD−123 3000 / Tape & Reel
(Pb−Free)
SBAT54T1G
SOD−123 3000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
April, 2014 − Rev. 10
1
Publication Order Number:
BAT54T1/D







No Preview Available !

BAT54T1G Даташит, Описание, Даташиты
BAT54T1G, SBAT54T1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
Reverse Breakdown Voltage
(IR = 10 mA)
V(BR)R 30 −
V
Total Capacitance
(VR = 1.0 V, f = 1.0 MHz)
CT
− 7.6 10
pF
Reverse Leakage
(VR = 25 V)
IR − 0.5 2.0 mAdc
Forward Voltage
(IF = 0.1 mAdc)
VF
0.22 0.24
Vdc
Forward Voltage
(IF = 30 mAdc)
VF − 0.41 0.5 Vdc
Forward Voltage
(IF = 100 mAdc)
VF − 0.52 0.8 Vdc
Reverse Recovery Time
(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc, Figure 1)
trr − − 5.0 ns
Forward Voltage
(IF = 1.0 mAdc)
VF
0.29 0.32
Vdc
Forward Voltage
(IF = 10 mAdc)
VF
0.35 0.40
Vdc
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
820 W
+10 V
2k
100 mH
0.1 mF
IF
0.1 mF
tr tp
10%
t
IF
trr t
50 W Output
Pulse
Generator
DUT
50 W Input
Sampling
Oscilloscope
90%
VR
INPUT SIGNAL
iR(REC) = 1 mA
IR
OUTPUT PULSE
(IF = IR = 10 mA; measured
at iR(REC) = 1 mA)
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
http://onsemi.com
2







No Preview Available !

BAT54T1G Даташит, Описание, Даташиты
BAT54T1G, SBAT54T1G
100
1 25°C
85°C
10
1 50°C
1.0
0.1
0.0
25°C −40°C
− 55°C
0.1 0.2 0.3 0.4 0.5
VF, FORWARD VOLTAGE (VOLTS)
Figure 2. Forward Voltage
0.6
1000
100
TA = 150°C
10
TA = 125°C
1.0
TA = 85°C
0.1
0.01
0.001
0
TA = 25°C
5 10 15 20 25
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Leakage Current
30
14
12
10
8
6
4
2
0
0
5 10 15 20 25
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Total Capacitance
30
http://onsemi.com
3










Всего страниц 4 Pages
Скачать PDF[ BAT54T1G.PDF Даташит ]

Ссылка Поделиться


Related Datasheets

Номер в каталогеОписаниеПроизводители
BAT54T130 VOLT SCHOTTKY BARRIER DETECTOR AND SWITCHING DIODEMotorola  Inc
Motorola Inc
BAT54T1SCHOTTKY BARRIER DETECTOR AND SWITCHING DIODEON Semiconductor
ON Semiconductor
BAT54T1GSchottky Barrier DiodesON Semiconductor
ON Semiconductor

Номер в каталоге Описание Производители
6MBP200RA-060

Intelligent Power Module

Fuji Electric
Fuji Electric
ADF41020

18 GHz Microwave PLL Synthesizer

Analog Devices
Analog Devices
AN-SY6280

Low Loss Power Distribution Switch

Silergy
Silergy

DataSheet26.com    |    2018    |   Контакты    |    Поиск