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K2737 PDF даташит
| Спецификация K2737 изготовлена «Hitachi Semiconductor» и имеет функцию, называемую «MOSFET ( Transistor ) - 2SK2737». |
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Детали детали
| Номер произв | K2737 |
| Описание | MOSFET ( Transistor ) - 2SK2737 |
| Производители | Hitachi Semiconductor |
| логотип |  |
9 Pages
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2SK2737
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
RDS(on) = 10 mΩ typ.
• 4V gate drive devices.
• High speed switching
Outline
TO–220CFM
ADE-208-533B(Z)
3rd. Edition
Jun 1998
D
G
123
1. Gate
2. Drain
3. Source
S
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2SK2737
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
VDSS
VGSS
ID
I Note1
D(pulse)
I DR
Pch Note2
Channel temperature
Tch
Storage temperature
Tstg
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
Ratings
30
±20
45
180
45
30
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown voltage V(BR)DSS
Gate to source breakdown voltage V(BR)GSS
Gate to source leak current
I GSS
Zero gate voltege drain current
I DSS
Gate to source cutoff voltage
VGS(off)
Static drain to source on state
resistance
RDS(on)
30
±20
—
—
1.0
—
Static drain to source on state
resistance
RDS(on)
—
Forward transfer admittance
Input capacitance
|yfs|
Ciss
20
—
Output capacitance
Coss —
Reverse transfer capacitance
Crss —
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse
recovery time
t d(on)
tr
t d(off)
tf
VDF
t rr
—
—
—
—
—
—
Note: 3. Pulse test
Typ Max Unit Test Conditions
——V
ID = 10mA, VGS = 0
——V
IG = ±100µA, VDS = 0
—
±10 µA
VGS = ±16V, VDS = 0
— 10 µA VDS = 30 V, VGS = 0
— 2.0 V
ID = 1mA, VDS = 10VNote3
10 14 mΩ ID = 20A, VGS = 10VNote3
15 25 mΩ ID = 20A, VGS = 4VNote3
30
1570
1100
410
32
300
180
200
1.0
75
—
—
—
—
—
—
—
—
—
—
S ID = 20A, VDS = 10VNote3
pF VDS = 10V
pF VGS = 0
pF f = 1MHz
ns VGS = 10V, ID = 20A
ns RL = 0.5Ω
ns
ns
V IF = 45A, VGS = 0
ns IF = 45A, VGS = 0
diF/ dt = 50A/µs
2
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Main Characteristics
2SK2737
Power vs. Temperature Derating
40
30
20
10
0 50 100 150
Case Temperature Tc (°C)
200
Maximum Safe Operation Area
500
200
100
100
10
µs
µs
50
20
10
5
2
DC Operation
Operation in
(Tc
this area is
limited by R DS(on)
=
25°C)
1
0.5 Ta = 25 °C
0.1 0.3 1 3 10
Drain to Source Voltage V
30
DS(V)
100
Typical Output Characteristics
10 V
100
80
8V
6V
5V
Pulse Test
4.5 V
60 4 V
40 3.5 V
20 3 V
VGS = 2.5 V
0 2 468
Drain to Source Voltage V DS(V)
10
Typical Transfer Characteristics
100
80 Tc = –25°C
60
25°C
75°C
40
20
VDS = 10 V
Pulse Test
0 2 4 6 8 10
Gate to Source Voltage V G(SV)
3
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