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S1MWF PDF даташит
| Спецификация S1MWF изготовлена «Diodes» и имеет функцию, называемую «1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER». |
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Детали детали
| Номер произв | S1MWF |
| Описание | 1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER |
| Производители | Diodes |
| логотип |  |
5 Pages
No Preview Available ! |
Green S1MWF
1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER
Product Summary (@ TA = +25°C)
VRRM (V)
1000
IO (A)
1
VF(MAX) (V)
1.1
IR(MAX) (µA)
5
Features and Benefits
Glass Passivated Die Construction
Small Form Factor, Low Profile
Surge Overload Rating to 30A Peak
Low Reverse Leakage Current
High Reverse Breakage Voltage
Lead-Free Finish & RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Description and Applications
Mechanical Data
The S1MWF is a rectifier packaged in the small form factor, low
profile SOD123F (Type B) package. Providing high reverse breakage
voltage, low reverse leakage current, and high surge current
capability for standard rectification, this device is ideal for use in
general rectification applications such as:
Case: SOD123F (Type B)
Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish Annealed over Copper Leadframe.
Switching Mode Power Supplies
DC-DC Converters
AC-DC Adaptors/Chargers
Solderable per MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 0.018 grams (Approximate)
Mobile Devices
LED Lighting
SOD123F (Type B)
Top View
Bottom View
Schematic View
Ordering Information (Note 4)
Notes:
Part Number
S1MWF-7
Compliance
Commercial
Case
SOD123F (Type B)
Packaging
3,000/Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOD123F (Type B)
F9 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: D = 2016)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
2014
B
Month
Code
Jan
1
Feb
2
2015
C
Mar
3
2016
D
Apr May
45
2017
E
Jun
6
2018
F
Jul Aug
78
2019
G
Sep
9
2020
H
2021
I
Oct Nov Dec
OND
S1MWF
Document number: DS36899 Rev. 9 - 2
1 of 5
www.diodes.com
November 2016
© Diodes Incorporated
No Preview Available ! |
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@ TT = +100°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single Half Sine-Wave Superimposed on Rated Load
VRRM
VRWM
VRM
VR(RMS)
IO
IFSM
Value
1,000
700
1.0
30
S1MWF
Unit
V
V
A
A
Thermal Characteristics
Characteristic
Typical Thermal Resistance, Junction to Case (Note 5)
Typical Thermal Resistance Junction to Ambient (Note 5)
Operating and Storage Temperature Range
Symbol
RJC
RJA
TJ, TSTG
Value
8
56
-55 to +150
Unit
°C/W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Reverse Breakdown Voltage (Note 6)
Forward Voltage Drop
Symbol
V(BR)R
Min
1,000
VF —
Typ
—
0.95
0.85
1.0
0.9
Max
—
1.1
1.0
—
—
Unit
V
V
Leakage Current (Note 6)
IR
—
0.15
6
5.0
100
µA
Reverse Recovery Time
Total Capacitance
tRR — 1.5 3.0 µs
CT — 7 — pF
Notes:
5. Device mounted on FR-4 substrate, 1.0" x 1.0", 2oz, single-sided, PC boards with 0.2" x 0.25" copper pad.
6. Short duration pulse test used to minimize self-heating effect.
Test Condition
IR = 5µA
IF = 1A, TJ = +25°C
IF = 1A, TJ = +125°C
IF = 2A, TJ = +25°C
IF = 2A, TJ = +125°C
VR = 1,000V, TJ = +25°C
VR = 1,000V, TJ = +125°C
IF = 0.5A, IR = 1.0A, IRR = 0.25A
VR = 4.0VDC, f = 1MHz
S1MWF
Document number: DS36899 Rev. 9 - 2
2 of 5
www.diodes.com
November 2016
© Diodes Incorporated
No Preview Available ! |
1.5
Note 5
1
0.5
0
0 25 50 75 100 125 150 175
TT, TERMINAL TEMPERATURE (°C)
Figure 1 Forward Current Derating Curve
100
10
TA = 150°C
1 TA = 125°C
TA = 85°C
0.1
0.01
TA = 25°C
0.001
0
TA = -55°C
100 200 300 400 500 600 700 800 900 1000
VR, REVERSE VOLTAGE (V)
Figure 3 Typical Reverse Characteristics
(+)
50V DC
Approx
(-)
Device
Under
Test
(-)
Pulse
Generator
((NNoottee82)
Oscilloscope
((NNoottee 71)
(+)
S1MWF
10
1
0.1
T = 150°C
A
TA = 125°C
0.01
T = 85°C
A
0.001
TA = 25°C
0.0001
TA = -55°C
0.00001
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 2 Typical Forward Characteristics
20
18
16
14
12
10
8
6
4
2
0
0
f = 1MHz
5 10 15 20 25 30 35
VR, REVERSE VOLTAGE (V)
Figure 4 Total Junction Capacitance
40
+0.5A
ttRrRr
0A
-0.25A
Notes:
7. Rise Time=7.0ns max. Input Impedance=1.0MΩ. 22pF.
8. Rise Time=10ns max. Input Impedance=50Ω.
-1.0A
Set time base for 50/100 ns/cm
Figure 5 Reverse Recovery Time Characteristic and Test Circuit
S1MWF
Document number: DS36899 Rev. 9 - 2
3 of 5
www.diodes.com
November 2016
© Diodes Incorporated
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| Номер в каталоге | Описание | Производители |
| S1MWF | 1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER | Diodes |
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