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ZXMN6A08E6Q PDF даташит

Спецификация ZXMN6A08E6Q изготовлена ​​​​«Diodes» и имеет функцию, называемую «N-CHANNEL ENHANCEMENT MODE MOSFET».

Детали детали

Номер произв ZXMN6A08E6Q
Описание N-CHANNEL ENHANCEMENT MODE MOSFET
Производители Diodes
логотип Diodes логотип 

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ZXMN6A08E6Q Даташит, Описание, Даташиты
Product Summary
V(BR)DSS
60V
RDS(ON)
80m@ VGS=10V
150m@ VGS=4.5V
ID
TA = +25°C
3.5A
2.5A
Description
This MOSFET is designed to minimize the on-state resistance and yet
maintain superior switching performance, making it ideal for high
efficiency power management applications.
Applications
DC-DC Converters
Power Management Functions
Disconnect Switches
Motor Control
SOT26
ZXMN6A08E6Q
60V N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
Low On-Resistance
Fast Switching Speed
Low Gate Drive
Low Threshold
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Available
Mechanical Data
Case: SOT26
Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Annealed over Copper Leadframe;
Solderable per MIL-STD-202, Method 208 e3
Weight: 0.018 grams (Approximate)
D
G
S
Top View
Ordering Information (Note 4 & 5)
Pin Out - Top View
Equivalent Circuit
Note:
Part Number
ZXMN6A08E6QTA
Compliance
Automotive
Case
SOT26
Quantity per reel
3,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOT26
6A8
6A8 = Product Type Marking Code
YM = Date Code Marking
Y or Y̅ = Year (ex: C = 2015)
M or M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2015
C
2016
D
Jan Feb Mar
123
2017
E
2018
F
Apr May Jun
456
2019
G
2020
H
Jul Aug Sep
78
9
2021
I
2022
J
Oct Nov Dec
OND
ZXMN6A08E6Q
Document Number DS36690 Rev. 3 - 2
1 of 8
www.diodes.com
March 2015
© Diodes Incorporated









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ZXMN6A08E6Q Даташит, Описание, Даташиты
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current VGS = 10V
Pulsed Drain Current
VGS= 10V
Continuous Source Current (Body diode)
Pulsed Source Current (Body diode)
(Note 7)
TA = +70°C (Note 7)
(Note 6)
(Note 8)
(Note 7)
(Note 8)
Symbol
VDSS
VGS
ID
IDM
IS
ISM
ZXMN6A08E6Q
Value
60
20
3.5
2.8
2.8
16
2.6
16
Unit
V
V
A
A
A
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation
Linear Derating Factor
(Note 6)
(Note 7)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
(Note 6)
(Note 7)
Symbol
PD
RθJA
TJ, TSTG
Value
1.1
8.8
1.7
13.6
113
73
-55 to +150
Unit
W
mW/°C
°C/W
°C
Notes:
6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
7. Same as Note 6, except the device is measured at t 10 seconds.
8. Same as Note 6, except the device is pulsed with D = 0.02 and pulse width 300µs. The pulse current is limited by the maximum junction temperature.
ZXMN6A08E6Q
Document Number DS36690 Rev. 3 - 2
2 of 8
www.diodes.com
March 2015
© Diodes Incorporated









No Preview Available !

ZXMN6A08E6Q Даташит, Описание, Даташиты
Thermal Characteristics
ZXMN6A08E6Q
10
R
DS(on)
Limited
1
DC
1s
100m
10m
100ms
Single Pulse
T =25°C
amb
10ms
1ms
100µs
100m
1
10
VDS Drain-Source Voltage (V)
Safe Operating Area
120
T =25°C
100
amb
80
60 D=0.5
40
D=0.2
20
Single Pulse
D=0.05
D=0.1
100µ 1m 10m 100m 1 10 100
Pulse Width (s)
Transient Thermal Impedance
1k
1.2
1.0
25mm x 25mm
1oz FR4
0.8
0.6
0.4
0.2
0.0
0 20 40 60 80 100 120 140 160
Temperature (°C)
Derating Curve
100 Single Pulse
T =25°C
amb
10
1
100µ 1m 10m 100m 1 10 100 1k
Pulse Width (s)
Pulse Power Dissipation
ZXMN6A08E6Q
Document Number DS36690 Rev. 3 - 2
3 of 8
www.diodes.com
March 2015
© Diodes Incorporated










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