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DMTH6009LPS PDF даташит

Спецификация DMTH6009LPS изготовлена ​​​​«Diodes» и имеет функцию, называемую «N-CHANNEL ENHANCEMENT MODE MOSFET».

Детали детали

Номер произв DMTH6009LPS
Описание N-CHANNEL ENHANCEMENT MODE MOSFET
Производители Diodes
логотип Diodes логотип 

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DMTH6009LPS Даташит, Описание, Даташиты
Product Summary
BVDSS
60V
RDS(ON) Max
10mΩ @ VGS = 10V
12mΩ @ VGS = 4.5V
ID
TC = +25°C
(Note 9)
89.5A
81.7A
Green DMTH6009LPS
60V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET
PowerDI
Features
Rated to +175°C Ideal for High Ambient Temperature
Environments
100% Unclamped Inductive Switching Ensures More Reliable
and Robust End Application
Low RDS(ON) Minimizes Power Losses
Low QG Minimizes Switching Losses
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This MOSFET is designed to minimize the on-state resistance
(RDS(ON)), yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
High Frequency Switching
Synchronous Rectification
DC-DC Converters
Mechanical Data
Case: PowerDI®5060-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.097 grams (Approximate)
PowerDI5060-8
Pin1
SD
SD
SD
GD
Top View
Bottom View
Ordering Information (Note 4)
Internal Schematic
Top View
Pin Configuration
Notes:
Part Number
DMTH6009LPS-13
Case
PowerDI5060-8
Packaging
2,500/Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
DDDD
H6009LS
YY WW
= Manufacturer’s Marking
H6009LS = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 16 = 2016)
WW = Week (01 - 53)
SS SG
PowerDI is a registered trademark of Diodes Incorporated.
DMTH6009LPS
Document number: DS38368 Rev.2 - 2
1 of 7
www.diodes.com
April 2016
© Diodes Incorporated









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DMTH6009LPS Даташит, Описание, Даташиты
DMTH6009LPS
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 5)
Continuous Drain Current (Note 6)
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current, L=0.1mH
Avalanche Energy, L=0.1mH
TA = +25°C
TA = +100°C
TC = +25°C
(Note 9)
TC = +100°C
Symbol
VDSS
VGSS
ID
ID
IS
IDM
IAS
EAS
Value
60
±16
11.76
8.3
89.5
63.3
100
160
20.3
20.6
Units
V
V
A
A
A
A
A
mJ
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
TA = +25°C
TC = +25°C
Symbol
PD
RθJA
PD
RθJC
TJ, TSTG
Value
2.8
53
136
1.1
-55 to +175
Units
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge (VGS = 10V)
Total Gate Charge (VGS = 4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol Min Typ Max
BVDSS
IDSS
IGSS
60
——
1
±100
VGS(TH)
0.7
2
7.2 10
RDS(ON)
8.9
12
VSD 0.9
CISS
COSS
CRSS
RG
QG
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
1,925
438
41
1.7
33.5
15.6
4.7
5.3
4.5
8.6
35.9
15.7
18.2
33.1
Unit
Test Condition
V VGS = 0V, ID = 1mA
μA VDS = 48V, VGS = 0V
nA VGS = ±16V, VDS = 0V
V VDS = VGS, ID = 250μA
mVGS = 10V, ID = 20A
VGS = 4.5V, ID = 15A
V VGS = 0V, IS = 20A
pF
VDS = 30V, VGS = 0V,
f = 1MHz
VDS = 0V, VGS = 0V, f = 1MHz
nC VDS = 30V, ID = 13.5A
ns
VDD = 30V, VGS = 10V,
RG = 6, ID = 13.5A
ns
nC IF = 13.5A, di/dt = 400A/μs
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate.
6. Thermal resistance from junction to soldering point (on the exposed drain pad).
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
9. Package limited.
DMTH6009LPS
Document number: DS38368 Rev.2 - 2
2 of 7
www.diodes.com
April 2016
© Diodes Incorporated









No Preview Available !

DMTH6009LPS Даташит, Описание, Даташиты
DMTH6009LPS
50
45
40
35
30
25
20
15
10
5
0
0
10
9
VGS = 10V
VGS = 4.5V
VGS = 4V
VGS = 3.5V
VGS = 3V
VGS = 2.5V
VGS = 2V
0.5 1 1.5 2 2.5
VDS , DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
3
VGS = 4.5V
8
VGS = 10V
7
6
5
5
0.02
0.018
0.016
0.014
0.012
10 15 20 25
ID, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
30
VGS = 4.5V
TA = 175°C
TA = 150°C
TA = 125°C
TA = 85°C
0.01
TA = 25°C
0.008
0.006
0.004
TA = -55°C
0.002
0
0
5 10 15 20 25
ID, DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
30
30
VDS = 5.0V
25
20
15
TA = 175°C
TA = 85°C
10
TA = 150°C
TA = 25°C
TA = 125°C
TA = -55°C
5
0
0 12 3 4
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
30
ID = 20A
25
ID = 15A
20
5
15
10
5
0
2 4 6 8 10 12 14 16 18
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Drain-Source On-Resistance
vs. Gate-Source Voltage
2.2
20
2
VGS = 4.5V
1.8 ID = 15A
1.6
1.4
1.2
1 VGS = 10V
ID = 20A
0.8
0.6
0.4
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (C)
Figure 6 On-Resistance Variation with Temperature
DMTH6009LPS
Document number: DS38368 Rev.2 - 2
3 of 7
www.diodes.com
April 2016
© Diodes Incorporated










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