DataSheet26.com

DMTH6005LCT PDF даташит

Спецификация DMTH6005LCT изготовлена ​​​​«Diodes» и имеет функцию, называемую «N-CHANNEL ENHANCEMENT MODE MOSFET».

Детали детали

Номер произв DMTH6005LCT
Описание N-CHANNEL ENHANCEMENT MODE MOSFET
Производители Diodes
логотип Diodes логотип 

6 Pages
scroll

No Preview Available !

DMTH6005LCT Даташит, Описание, Даташиты
DMTH6005LCT
60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
60V
RDS(ON) Max
6mΩ @ VGS = 10V
10mΩ @ VGS = 4.5V
ID
TC = +25°C
100A
85A
Description and Applications
This new generation MOSFET features low on-resistance and fast
switching, making it ideal for high efficiency power management
applications.
Engine Management Systems
Body Control Electronics
DC-DC Converters
Features
Rated to +175C Ideal for High Ambient Temperature
Environments
100% Unclamped Inductive Switching Ensures more Reliable
and Robust End Application
Low Input Capacitance
Low Input/Output Leakage
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: TO220-3
Case Material: Molded Plastic, ―Green‖ Molding Compound, UL
Flammability Classification Rating 94V-0
Terminals: Matte Tin Finish annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram Below
Weight: 1.85 grams (Approximate)
TO220-3
Top View
Bottom View
Equivalent Circuit
Top View
Pin Out Configuration
Ordering Information (Note 4)
Notes:
Part Number
DMTH6005LCT
Case
TO220-3
Packaging
50 Pieces/Tube
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
DMTH6005LCT
Document number: DS38743 Rev. 1 - 2
H6005L
YYWW
=Manufacturer’s Marking
H6005L = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Last Two Digits of Year (ex: 16 = 2016)
WW or WW = Week Code (01 to 53)
1 of 6
www.diodes.com
June 2016
© Diodes Incorporated









No Preview Available !

DMTH6005LCT Даташит, Описание, Даташиты
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 6)
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%)
Avalanche Current, L=1mH
Avalanche Energy, L=1mH
TC = +25°C
TC = +100°C
TC = +25°C
Symbol
VDSS
VGSS
ID
IS
IDM
IAS
EAS
DMTH6005LCT
Value
60
20
100
78
100
160
14.8
98
Unit
V
V
A
A
A
A
mJ
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
TA = +25°C
TC = +25°C
Symbol
PD
RJA
PD
RJC
TJ, TSTG
Value
2.8
52.8
125
1.2
-55 to +175
Unit
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 10V)
Total Gate Charge (VGS = 4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
VSD
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
Min
60
1
Typ
4.5
8.8
2962
965.2
59.8
0.66
47.1
23.1
10.2
12.5
8.3
9.4
22
8.9
40.4
49.7
Max
1
±100
3
6
10
1.2
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on infinite heat sink.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
Unit
Test Condition
V VGS = 0V, ID = 1mA
µA VDS = 48V, VGS = 0V
nA VGS = 20V, VDS = 0V
V VDS = VGS, ID = 250µA
mΩ VGS = 10V, ID = 20A
mΩ VGS = 4.5V, ID = 12.5A
V VGS = 0V, IS = 20A
pF
VDS = 30V, VGS = 0V,
f = 1MHz
VDS = 0V, VGS = 0V, f = 1MHz
nCVDD = 30V, ID = 50A
ns
VDD = 30V, VGS = 10V,
ID = 30A, Rg = 3.3Ω
ns
nC
IF = 30A, di/dt = 100A/μs
DMTH6005LCT
Document number: DS38743 Rev. 1 - 2
2 of 6
www.diodes.com
June 2016
© Diodes Incorporated









No Preview Available !

DMTH6005LCT Даташит, Описание, Даташиты
50.0
45.0
40.0
35.0
VGS = 4.5V
VGS=5.0V
VGS = 6.0V
VGS = 10.0V
30.0
25.0
20.0
15.0
VGS = 4.0V
10.0
5.0
VGS = 3.5V
0.0
0
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
2
15.00
12.00
9.00
VGS = 4.5V
6.00
3.00
VGS = 10V
0.00
0 5 10 15 20 25 30 35 40 45 50
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
10
175150
8
125
6
85
4 25
-55
2
VGS = 10V
0
0 5 10 15 20 25 30
ID, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
DMTH6005LCT
30
VDS = 10V
25
20
15
10
5
0
0
20
18
16
14
12
10
8
6
4
2
0
2
150
175
125
85
25
-55
1234
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
5
ID = 20A
ID = 12.5A
4 6 8 10 12 14 16 18
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
20
2
1.8
1.6 VGS = 10V, ID = 20A
1.4
1.2
1
0.8 VGS = 4.5V, ID = 12.5A
0.6
0.4
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE ()
Figure 6. On-Resistance Variation with Temperature
DMTH6005LCT
Document number: DS38743 Rev. 1 - 2
3 of 6
www.diodes.com
June 2016
© Diodes Incorporated










Скачать PDF:

[ DMTH6005LCT.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
DMTH6005LCTN-CHANNEL ENHANCEMENT MODE MOSFETDiodes
Diodes

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск