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BSS138DWQ PDF даташит

Спецификация BSS138DWQ изготовлена ​​​​«Diodes» и имеет функцию, называемую «DUAL N-CHANNEL ENHANCEMENT MODE MOSFET».

Детали детали

Номер произв BSS138DWQ
Описание DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Производители Diodes
логотип Diodes логотип 

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BSS138DWQ Даташит, Описание, Даташиты
BSS138DWQ
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Product Summary
V(BR)DSS
50V
RDS(ON) Max
3.5Ω @ VGS = 10V
ID Max
TA = +25°C
200mA
Description
This MOSFET is designed to minimize the on-state resistance
(RDS(ON)), yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
Load Switch
SOT363
Features
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Notes 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
Case: SOT-363
Case Material: Molded Plastic. “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.006 grams (Approximate)
D2 G1 S1
Top View
S2 G2 D1
Top View
Internal Schematic
Ordering Information (Note 5)
Notes:
Part Number
BSS138DWQ-7
BSS138DWQ-13
Case
SOT363
SOT363
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/quality/product_compliance_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
K38 YM
K38 = Product Type Marking Code
YM = Date Code Marking
Y or = Year (ex: D = 2016)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
2005
S
2006
T
Month
Code
Jan Feb
12
BSS138DWQ
Document number: DS38849 Rev. 1 - 2
Mar
3
2016
D
Apr
4
2017
E
2018
F
2019
G
2020
H
May
5
Jun
6
Jul Aug Sep
78
9
1 of 6
www.diodes.com
2021
I
Oct
O
2022
J
2023
K
Nov Dec
ND
April 2016
© Diodes Incorporated









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BSS138DWQ Даташит, Описание, Даташиты
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Drain-Gate Voltage (Note 8)
Gate-Source Voltage
Drain Current (Note 6)
Continuous
Continuous
Symbol
VDSS
VDGR
VGSS
ID
BSS138DWQ
BSS138DW
50
50
20
200
Units
V
V
V
mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
BSS138DW
200
625
-55 to +150
Units
mW
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
Symbol Min Typ Max Unit
Test Condition
BVDSS 50 75 V VGS = 0V, ID = 250μA
IDSS
  0.5 µA VDS = 50V, VGS = 0V
IGSS
  100 nA VGS = 20V, VDS = 0V
VGS(TH) 0.5 1.2 1.5
V VDS = VGS, ID = 250μA
RDS(ON)
1.4 3.5
VGS = 10V, ID = 0.22A
gFS 100   mS VDS =25V, ID = 0.2A, f = 1.0KHz
CISS
COSS
CRSS
  50 pF
  25 pF VDS = 10V, VGS = 0V, f = 1.0MHz
  8.0 pF
tD(ON)   20 ns VDD = 30V, ID = 0.2A,
tD(OFF)   20 ns RGEN = 50
Notes:
6. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown at http://www.diodes.com/package-outlines.html.
7. Short duration pulse test used to minimize self-heating effect.
8. RGS 20K.
BSS138DWQ
Document number: DS38849 Rev. 1 - 2
2 of 6
www.diodes.com
April 2016
© Diodes Incorporated









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BSS138DWQ Даташит, Описание, Даташиты
BSS138DWQ
0.6
Tj = 25°C
0.5
0.4
0.3
0.2
0.1
VGS = 3.5V
VGS = 3.25V
VGS = 3.0V
VGS = 2.75V
VGS = 2.5V
0
0 1 2 3 4 5 6 7 8 9 10
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Drain-Source Current vs. Drain-Source Voltage
0.8
VDS = 1V
0.7
0.6
0.5
0.4
-55°C
25°C
150°C
0.3
0.2
0.1
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Transfer Characteristics
2.45
2.25
2.05
1.85
1.65
VGS = 10V
ID = 0.5A
1.45
1.25
1.05
VGS = 4.5V
ID = 0.075A
0.85
0.65
-55
-5
45
95 145
Tj, JUNCTION TEMPERATURE (°C)
Fig. 3 Drain-Source On Resistance vs. Junction Temperature
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
-55 -25 0 25 50 75 100 125 150
Tj, JUNCTION TEMPERATURE (°C)
Fig. 4 Gate Threshold Voltage vs. Junction Temperature
8
VGS = 2.5V
7
6
5
150°C
25°C
4
3
-55°C
2
1
0
0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16
ID, DRAIN-CURRENT (A)
Fig. 5 Drain-Source On-Resistance vs. Drain-Current
9
VGS = 2.75V
8
7
150°C
6
5
4
25°C
3
2
-55°C
1
0
0
0.05
0.1
0.15
0.2
0.25
ID, DRAIN-CURRENT (A)
Fig. 6 Drain-Source On-Resistance vs. Drain-Current
BSS138DWQ
Document number: DS38849 Rev. 1 - 2
3 of 6
www.diodes.com
April 2016
© Diodes Incorporated










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Номер в каталогеОписаниеПроизводители
BSS138DWDUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTORDiodes Incorporated
Diodes Incorporated
BSS138DWQDUAL N-CHANNEL ENHANCEMENT MODE MOSFETDiodes
Diodes

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