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2N7002DWA PDF даташит

Спецификация 2N7002DWA изготовлена ​​​​«Diodes» и имеет функцию, называемую «DUAL N-CHANNEL ENHANCEMENT MODE MOSFET».

Детали детали

Номер произв 2N7002DWA
Описание DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Производители Diodes
логотип Diodes логотип 

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2N7002DWA Даташит, Описание, Даташиты
2N7002DWA
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
60V
RDS(ON)
8Ω @ VGS = 5V
6Ω @ VGS = 10V
Package
SOT363
ID
TA = +25°C
170mA
200mA
Description
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)), yet maintain superior switching performance,
making it ideal for high-efficiency power management applications.
Features
Dual N-Channel MOSFET
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Small Surface Mount Package
HBM Class 1C
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Applications
DC-DC Converters
Power Management Functions
Battery Operated Systems and Solid-State Relays
Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc.
Mechanical Data
Case: SOT363
Case Material: Molded Plastic.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.006 grams (Approximate)
SOT363
D2 G1 S1
HBM Class 1C
Top View
S2 G2 D1
Top View
Internal Schematic
Ordering Information (Notes 4 & 5)
Notes:
Part Number
2N7002DWA-7
2N7002DWA-13
2N7002DWAQ-7
2N7002DWAQ-13
Compliance
Standard
Standard
Automotive
Automotive
Case
SOT363
SOT363
SOT363
SOT363
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
2N7002DWA
Document number: DS36120 Rev. 8 - 2
1 of 7
www.diodes.com
October 2015
© Diodes Incorporated









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2N7002DWA Даташит, Описание, Даташиты
2N7002DWA
Marking Information
MM0 YM
MM1 YM
MM4 YM
MM0 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Z = 2012)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
2012
Z
2013
A
Month
Code
Jan Feb Mar
123
MM1 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Z = 2012)
M = Month (ex: 9 = September)
2014
B
Apr May
45
2015
C
Jun Jul
67
MM4 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Z = 2012)
M = Month (ex: 9 = September)
2016
D
Aug
8
Sep
9
2017
E
Oct
O
2018
F
Nov Dec
ND
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6)
Characteristic
VGS = 10V
Continuous Drain Current (Note 6)
VGS = 5V
Continuous Drain Current (Note 7)
VGS = 10V
Continuous Drain Current (Note 7)
VGS = 5V
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Steady
State
Steady
State
Steady
State
Steady
State
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
ID
ID
ID
IDM
Value
60
±20
180
140
150
120
200
160
170
140
700
Units
V
V
mA
mA
mA
mA
mA
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
Thermal Resistance, Junction to Ambient (Note 7)
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
Symbol
PD
RθJA
PD
RθJA
RθJC
TJ, TSTG
Notes:
6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout.
Value
300
435
400
330
139
-55 to +150
Units
mW
°C/W
mW
°C/W
°C/W
°C
2N7002DWA
Document number: DS36120 Rev. 8 - 2
2 of 7
www.diodes.com
October 2015
© Diodes Incorporated









No Preview Available !

2N7002DWA Даташит, Описание, Даташиты
2N7002DWA
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol Min Typ
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
BVDSS
IDSS
IGSS
60
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
VGS(th)
RDS(ON)
0.8
Forward Transconductance
Diode Forward Voltage
gFS 80
VSD 0.8
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge VGS = 10V
Total Gate Charge VGS = 4.5V
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Ciss
Coss
Crss
RG
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
22.0
3.2
2.0
88
0.87
0.43
0.11
0.11
3.3
3.2
12.0
6.3
Notes: 8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
Max
1.0
±5
2.5
8
6
1.2
Unit
Test Condition
V VGS = 0V, ID = 250µA
µA VDS = 60V, VGS = 0V
µA VGS = ±20V, VDS = 0V
V VDS = VGS, ID = 250µA
Ω VGS = 5.0V, ID = 0.115A
Ω VGS = 10.0V, ID = 0.115A
mS VDS = 10V, ID = 0.115A
V VGS = 0V, IS = 115mA
pF VDS = 25V, VGS = 0V, f = 1.0MHz
Ω VDS = 0V, VGS = 0V, f = 1.0MHz
nC VGS = 10V, VDS = 30V,
ID = 150mA
nS
VDD = 30V, ID = 0.115A, VGEN = 10V,
RGEN = 25Ω
2N7002DWA
Document number: DS36120 Rev. 8 - 2
3 of 7
www.diodes.com
October 2015
© Diodes Incorporated










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