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DMN3032LFDB PDF даташит

Спецификация DMN3032LFDB изготовлена ​​​​«Diodes» и имеет функцию, называемую «DUAL N-CHANNEL ENHANCEMENT MODE MOSFET».

Детали детали

Номер произв DMN3032LFDB
Описание DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Производители Diodes
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DMN3032LFDB Даташит, Описание, Даташиты
DMN3032LFDB
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
30V
RDS(ON) max
30mΩ @ VGS = 10V
42mΩ @ VGS = 4.5V
ID max
TA = +25°C
6.2A
5.2A
Features and Benefits
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. "Green" Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This MOSFET is designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high-efficiency power management applications.
Body Control Electronics
Power Management Functions
DC-DC Converters
Mechanical Data
Case: U-DFN2020-6
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish NiPdAu Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208 e4
Terminals Connections: See Diagram Below
Weight: 0.0065 grams (Approximate)
U-DFN2020-6
S2
G2
D2
D1
D1
D2
G1
S1
Pin1
Bottom View
D1 D2
G1 G2
S1
Internal Schematic
S2
Ordering Information (Note 4)
Notes:
Part Number
DMN3032LFDB-7
DMN3032LFDB-13
Case
U-DFN2020-6
U-DFN2020-6
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
U-DFN2020-6
N5 = Product Type Marking Code
N5 YM = Date Code Marking
Y = Year (ex: C = 2015)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
2015
C
Month
Code
Jan Feb
12
DMN3032LFDB
Document number: DS35730 Rev. 3 - 2
2016
D
Mar
3
2017
E
2018
F
Apr May Jun
Jul
4567
1 of 6
www.diodes.com
2019
G
Aug
8
Sep
9
2020
H
Oct
O
2021
I
Nov Dec
ND
September 2015
© Diodes Incorporated









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DMN3032LFDB Даташит, Описание, Даташиты
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6) VGS = 10V
Steady
State
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10s Pulse, Duty Cycle = 1%)
Avalanche Current (Note 7) L = 0.1mH
Avalanche Energy (Note 7) L = 0.1mH
TA = +25C
TA = +75C
Symbol
VDSS
VGSS
ID
IS
IDM
IAS
EAS
DMN3032LFDB
Value
30
±20
6.2
5.0
2
25
12
10
Unit
V
V
A
A
A
A
mJ
Thermal Characteristics
Total Power Dissipation (Note 5)
Characteristic
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
Steady state
t<10s
Steady state
t<10s
Symbol
PD
RJA
PD
RJA
RJC
TJ, TSTG
Value
1.0
127
75
1.7
72
43
9
-55 to +150
Unit
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Zero Gate Voltage Drain Current TJ = +150°C (Note 9)
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Symbol
BVDSS
IDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
VSD
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
Min
30
-
-
-
1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ Max
--
- 1.0
- 100
- ±100
1.5 2.0
25 30
30 42
0.75 1.2
500 -
52 -
44 -
2.3 -
5.0 -
10.6 -
1.3 -
1.8 -
2.2 -
2.6 -
9.7 -
2.0 -
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
Unit
Test Condition
V VGS = 0V, ID = 250μA
μA VDS = 30V, VGS = 0V
μA VDS = 30V, VGS = 0V
nA VGS = ±20V, VDS = 0V
V VDS = VGS, ID = 250μA
mVGS = 10V, ID = 5.8A
VGS = 4.5V, ID = 4.8A
V VGS = 0V, IS = 1A
pF
pF
VDS = 15V, VGS = 0V,
f = 1.0MHz
pF
VDS = 0V, VGS = 0V, f = 1MHz
nC
nC
nC VDS = 15V, ID = 5.8A
nC
ns
ns VDD = 15V, VGS = 10V,
ns RL = 2.6Ω, RG = 3Ω
ns
DMN3032LFDB
Document number: DS35730 Rev. 3 - 2
2 of 6
www.diodes.com
September 2015
© Diodes Incorporated









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DMN3032LFDB Даташит, Описание, Даташиты
30.0
25.0
20.0
15.0
VGS=4.0V
VGS=10.0V
VGS=4.5V
VGS=3.5V
VGS=3.0V
10.0
5.0
0.0
0
VGS=2.5V
VGS=2.0V
1234
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
5
0.05
0.04
0.03
0.02
VGS=4.5V
VGS=10V
DMN3032LFDB
20
18 VDS=5V
16
14
12
10
8 TA=150
6 TA=125
4 TA=85
TA=25
2 TA=-55
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
0.1
0.08
ID=3.6A
0.06
0.04
0.01
0
1 3 5 7 9 11 13 15 17 19 21
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current
and Gate Voltage
0.02
ID=2.8A
0
2 4 6 8 10 12 14 16 18 20
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
0.05
0.045
0.04
0.035
VGS= 10V
150
125
0.03
0.025
0.02
85
25
0.015
-55
0.01
0.005
0 2 4 6 8 10 12 14 16 18 20
ID, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current
and Temperature
1.8
1.6 VGS=10V, ID=5.0A
1.4
1.2
VGS=4.5V, ID=3.0A
1
0.8
0.6
-50 -25 0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE ()
Figure 6. On-Resistance Variation with Temperature
DMN3032LFDB
Document number: DS35730 Rev. 3 - 2
3 of 6
www.diodes.com
September 2015
© Diodes Incorporated










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