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Número de pieza | DMN3021LFDF | |
Descripción | N-CHANNEL ENHANCEMENT MODE MOSFET | |
Fabricantes | Diodes | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de DMN3021LFDF (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! Product Summary
V(BR)DSS
30V
RDS(ON) Max
15mΩ @ VGS = 10V
20mΩ @ VGS = 4.5V
ID Max
TA = +25°C
9.3A
8.1A
DMN3021LFDF
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Features
0.6mm Profile – Ideal for Low Profile Applications
PCB Footprint of 4mm2
Low Gate Threshold Voltage
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description
This MOSFET is designed to minimize the on-state resistance
(RDS(ON)), yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Battery Management Application
Power Management Functions
DC-DC Converters
Mechanical Data
Case: U-DFN2020-6 (Type F)
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu over Copper Leadframe. Solderable
per MIL-STD-202, Method 208 e4
Weight: 0.007 grams (Approximate)
U-DFN2020-6 (Type F)
D
G
Top View
Bottom View
Pin Out
Bottom View
S
Internal Schematic
Ordering Information (Note 4)
Notes:
Part Number
DMN3021LFDF-7
DMN3021LFDF-13
Case
U-DFN2020-6 (Type F)
U-DFN2020-6 (Type F)
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
F2 = Product Type Marking Code
YM = Date Code Marking
F2 Y = Year (ex: D = 2016)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2016
D
Jan
1
2017
E
Feb Mar
23
2018
F
Apr
4
2019
G
May
5
Jun
6
2020
H
Jul
7
Aug
8
2021
I
Sep
9
2022
J
2023
K
Oct Nov Dec
OND
DMN3021LFDF
Datasheet number: DS37731 Rev. 2 - 2
1 of 7
www.diodes.com
July 2016
© Diodes Incorporated
1 page 100
RDS(ON) Limited
PW=1ms
10
PW=100μs
DMN3021LFDF
1 PW=10ms
PW=100ms
0.1
TJ(MAX)=150℃
TA=25℃
PW=1s
Single Pulse
DUT on 1*MRP board
PW=10s
0.01 VGS=10V
0.01 0.1
1
DC
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 13. SOA, Safe Operation Area
100
1
D=0.5
D=0.3
0.1
D=0.1
D=0.05
D=0.7
D=0.9
0.01
D=0.02
D=0.01
D=0.005
D=Single Pulse
0.001
1E-05
0.0001
0.001
RθJA(t)=r(t) * RθJA
RθJA=174℃/W
Duty Cycle, D=t1 / t2
0.01 0.1 1 10 100 1000
t1, PULSE DURATION TIME (sec)
Figure 14. Transient Thermal Resistance
DMN3021LFDF
Datasheet number: DS37731 Rev. 2 - 2
5 of 7
www.diodes.com
July 2016
© Diodes Incorporated
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet DMN3021LFDF.PDF ] |
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DMN3021LFDF | N-CHANNEL ENHANCEMENT MODE MOSFET | Diodes |
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