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DMN1150UFL3 PDF даташит

Спецификация DMN1150UFL3 изготовлена ​​​​«Diodes» и имеет функцию, называемую «DUAL N-CHANNEL ENHANCEMENT MODE MOSFET».

Детали детали

Номер произв DMN1150UFL3
Описание DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Производители Diodes
логотип Diodes логотип 

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DMN1150UFL3 Даташит, Описание, Даташиты
Product Summary
Device
BVDSS
N-Channel 12V
RDS(ON) Max
150m@ VGS = 4.5V
185m@ VGS = 2.5V
ID Max
TA = +25°C
2.0A
1.8A
Description and Applications
This MOSFET is designed to minimize the on-state resistance
(RDS(ON)), yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Motor Control
Power Management Functions
Backlighting
X2-DFN1310-6 (Type B)
D1
DMN1150UFL3
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
Footprint of just 1.3 mm2
Ultra-Low Profile Package 0.35mm Profile
Low Gate Threshold Voltage
Fast Switching Speed
Ultra-Small Surface Mount Package
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: X2-DFN1310-6 (Type B)
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish NiPdAu Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208 e4
Weight: 0.002 grams (Approximate)
G2 S2
D1
D2
G1 G2
ESD PROTECTED
Bottom View
S1 G1
D2
Top View
Pin-Out
Gate Protection
Diode
S1
Q1 N-Channel
Gate Protection
Diode
S2
Q2 N-Channel
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
Reel Size (inches)
Tape Width (mm)
Quantity per Reel
DMN1150UFL3-7
7
8 3,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
150
150 = Product Type Marking Code
DMN1150UFL3
Datasheet Number: DS38572 Rev. 3 - 2
1 of 7
www.diodes.com
April 2016
© Diodes Incorporated









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DMN1150UFL3 Даташит, Описание, Даташиты
DMN1150UFL3
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 5) VGS = 4.5V
Steady
State
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
Value
12
±6
2.0
1.6
Unit
V
V
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
TA = +25°C
Steady State
TA = +25°C
Steady State
Symbol
PD
RθJA
PD
RθJA
RθJC
TJ, TSTG
Value
0.39
320
0.9
141
49
-55 to +150
Unit
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
VSD
CISS
COSS
CRSS
RG
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
Min
12
0.35
Typ
0.42
119
141
175
0.7
115
25
23
90
1.4
0.1
0.1
4.0
7.4
44
19
Max
1
±10
1.0
150
185
210
1.2
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
Unit
V
µA
µA
V
m
V
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
Test Condition
VGS = 0V, ID = 250μA
VDS = 12V, VGS = 0V
VGS = ±6V, VDS = 0V
VDS = VGS, ID = 250μA
VGS = 4.5V, ID = 1A
VGS = 2.5V, ID = 1A
VGS = 1.8V, ID = 1A
VGS = 0V, IS = 150mA
VDS = 6V, VGS = 0V,
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
VDS = 4V, VGS = 4.5V, ID = 1A
VGS = 6V, VDS = 4V,
RG = 1, ID = 1A
DMN1150UFL3
Datasheet Number: DS38572 Rev. 3 - 2
2 of 7
www.diodes.com
April 2016
© Diodes Incorporated









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DMN1150UFL3 Даташит, Описание, Даташиты
5.0
VGS=4.0V
VGS=4.5V
4.0
3.0
2.0
VGS = 2.0V
VGS = 1.8V
VGS = 2.5V
VGS = 3.0V
VGS=3.5V
VGS = 1.5V
5
VDS = 3.0V
4
3
2
DMN1150UFL3
125
85
25
-55
1.0
0.0
0
VGS = 1.1V
VGS = 0.9V
0.3 0.6 0.9 1.2
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure1. Typical Output Characteristic
1.5
0.2
0.18
0.16
0.14
0.12
VGS = 1.8V
VGS = 2.5V
0.1
0.08
0.06
VGS = 4.5V
0.04
0.02
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
1
0
0
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
150
0.5 1 1.5 2 2.5 3
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
ID = 1.0A
12345
Vgs, Gate-Source Voltage (V)
Figure 4. Typical Transfer Characteristic
6
0.20
0.18
VGS = 4.5V
0.16
0.14
150
0.12
0.10
0.08
0.06
0.04
125
85
25
-55
0.02
0.00
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
ID, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
2
1.5 VGS = 2.5V, ID = 1A
1 VGS = 4.5V, ID = 1A
0.5
0
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE ()
Figure 6. On-Resistance Variation with Temperature
DMN1150UFL3
Datasheet Number: DS38572 Rev. 3 - 2
3 of 7
www.diodes.com
April 2016
© Diodes Incorporated










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