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DMT10H015LK3 PDF даташит

Спецификация DMT10H015LK3 изготовлена ​​​​«Diodes» и имеет функцию, называемую «100V N-CHANNEL ENHANCEMENT MODE MOSFET».

Детали детали

Номер произв DMT10H015LK3
Описание 100V N-CHANNEL ENHANCEMENT MODE MOSFET
Производители Diodes
логотип Diodes логотип 

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DMT10H015LK3 Даташит, Описание, Даташиты
Green DMT10H015LK3
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
100V
RDS(ON) Max
15mΩ @ VGS = 10V
18mΩ @ VGS = 6V
ID
TC = +25°C
52.7A
48A
Description
This new generation MOSFET features low on-resistance and fast
switching, making it ideal for high efficiency power management
applications.
Applications
Power Management Functions
DC-DC Converters
Backlighting
Features
100% Unclamped Inductive Switching Ensures More Reliable
and Robust End Application
Low RDS(ON) Minimizes Power Losses
Low QG Minimizes Switching Losses
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: TO252 (DPAK)
Case Material: Molded Plastic, ―Green‖ Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish Matte Tin Annealed over Copper Leadframe
Solderable per MIL-STD-202, Method 208
Weight: 0.33 grams (Approximate)
Top View
Pin Out Top View
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
DMT10H015LK3-13
Case
TO252 (DPAK)
Packaging
2,500/Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
T115LK
YYWW
= Manufacturers Marking
T115LK = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 16 = 2016)
WW = Week Code (01 to 53)
DMT10H015LK3
Document number: DS38736 Rev. 3 - 2
1 of 7
www.diodes.com
January 2017
© Diodes Incorporated









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DMT10H015LK3 Даташит, Описание, Даташиты
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current, VGS = 10V
Pulsed Drain Current (10s Pulse, Duty Cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Body Diode Forward Current (10s Pulse, Duty Cycle = 1%)
Avalanche Current, L = 3mH
Avalanche Energy, L = 3mH
TC = +25°C
TC = +70°C
Symbol
VDSS
VGSS
ID
IDM
IS
ISM
IAS
EAS
DMT10H015LK3
Value
100
±20
52.7
42.1
150
48
150
7.5
85
Unit
V
V
A
A
A
A
A
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
Steady State
Steady State
Symbol
PD
RθJA
PD
RθJA
RθJC
TJ, TSTG
Value
1.8
69
2.9
42
2
-55 to +150
Unit
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
VSD
CISS
COSS
CRSS
RG
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
Min
100
1.4
Typ
10.7
13.1
1871
261
6.9
0.75
33.3
6.9
5.1
6.5
7.0
19.7
8.1
37.9
51.9
Max
1
±100
3.5
15
18
1.3
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
Unit
Test Condition
V VGS = 0V, ID = 1mA
µA VDS = 80V, VGS = 0V
nA VGS = 20V, VDS = 0V
V VDS = VGS, ID = 250µA
mVGS = 10V, ID = 20A
VGS = 6V, ID = 20A
V VGS = 0V, IS = 20A
pF
VDS = 50V, VGS = 0V
f = 1MHz
VDS = 0V, VGS = 0V, f = 1MHz
nCVDD = 50V, ID = 10A,
VGS = 10V
ns
VDD = 50V, VGS = 10V,
ID = 10A, RG = 6
ns
nC IF = 10A, di/dt = 100A/µs
DMT10H015LK3
Document number: DS38736 Rev. 3 - 2
2 of 7
www.diodes.com
January 2017
© Diodes Incorporated









No Preview Available !

DMT10H015LK3 Даташит, Описание, Даташиты
30.0
25.0
20.0
15.0
10.0
5.0
0.0
0
0.015
VGS = 4.5V
VGS=5.0V
VGS = 6.0V
VGS = 10.0V
VGS = 4.0V
VGS = 3.5V
VGS = 3.0V
0.5 1 1.5 2 2.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
3
0.013
VGS = 6V
0.011
0.009
VGS = 10V
0.007
0 5 10 15 20 25 30
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
0.03
0.025
0.02
0.015
0.01
0.005
VGS = 10V
150
125
85
25
-55
0
0 5 10 15 20 25 30
ID, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Junction Temperature
DMT10H015LK3
30
VDS = 10V
25
20
15
10
5
0
1
150
125
85
25
-55
1.5 2 2.5 3 3.5 4 4.5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
5
0.1
0.08
0.06
0.04
0.02
0
0
ID = 20A
4 8 12 16
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
20
2.4
2.2
2 VGS = 10V, ID = 20A
1.8
1.6
1.4
1.2
1 VGS = 6V, ID = 20A
0.8
0.6
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE ()
Figure 6. On-Resistance Variation with Junction
Temperature
DMT10H015LK3
Document number: DS38736 Rev. 3 - 2
3 of 7
www.diodes.com
January 2017
© Diodes Incorporated










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