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ZXMHC10A07T8 PDF даташит

Спецификация ZXMHC10A07T8 изготовлена ​​​​«Diodes» и имеет функцию, называемую «COMPLEMENTARY 100V ENHANCEMENT MODE MOSFET H-BRIDGE».

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Номер произв ZXMHC10A07T8
Описание COMPLEMENTARY 100V ENHANCEMENT MODE MOSFET H-BRIDGE
Производители Diodes
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ZXMHC10A07T8 Даташит, Описание, Даташиты
ZXMHC10A07T8
Green
COMPLEMENTARY 100V ENHANCEMENT MODE MOSFET H-BRIDGE
Product Summary
Device
BVDSS
N-Channel 100V
P-Channel -100V
RDS(ON) max
0.7Ω @ VGS = 10V
0.9Ω @ VGS = 6V
1.0@ VGS = -10V
1.45@ VGS = -6V
ID max
TA = +25°C
1.4A
1.1A
-1.3A
-0.9A
Description
This new generation complementary MOSFET H-Bridge features low
on-resistance achievable with low gate drive.
Applications
DC Motor Control
DC-AC Inverters
Features
2 x N + 2 x P Channels in a SOIC Package
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: SM-8 (8 LEAD SOT223)
Case Material: Molded Plastic, "Green" Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See Diagram
Terminals: Finish Matte Tin Annealed over Copper Leadframe;
Solderable per MIL-STD-202, Method 208
Weight: 0.117 grams (Approximate)
SM-8
Top View
PIN1
G3
S2 S3
G2
G1
G4
D3 D4
S1 S4
D1 D2
Top View
Pin Configuration
Internal Schematic
Ordering Information (Note 4)
Part Number
ZXMHC10A07T8TA
Reel Size
7’’
Tape Width
12mm
Quantity per Reel
1,000 units
Notes:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SM-8
ZXMHC
10A07
ZXMHC10A07 = Product Type Marking Code
YWW = Date Code Marking
Y or Y = Last Digit of Year (ex: 5= 2015)
WW or WW = Week Code (01~53)
ZXMHC10A07T8
Document number: DS33510 Rev. 4 - 2
1 of 10
www.diodes.com
March 2015
© Diodes Incorporated









No Preview Available !

ZXMHC10A07T8 Даташит, Описание, Даташиты
ZXMHC10A07T8
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current, VGS = 10V (Note 8)
Maximum Body Diode Forward Current (Note 6)
Pulsed Drain Current (Note 7)
Pulsed Source Current (Note 7)
Steady
State
TA = +25°C (Note 6)
TA = +70°C (Note 6)
TA = +25°C (Note 5)
Symbol
VDSS
VGSS
ID
IS
IDM
ISM
N-channel
100
±20
1.1
0.9
1.0
2.3
5.2
5.2
P-channel
-100
±20
-0.9
-0.8
-0.8
-2.2
-4.5
-4.5
Units
V
V
A
A
A
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Total Power Dissipation (Note 8)
Linear Derating Factor
Total Power Dissipation (Note 8)
Linear Derating Factor
Characteristic
Thermal Resistance, Junction to Ambient (Note 8)
Operating and Storage Temperature Range
TA = +25°C (Note 5)
TA = +25°C (Note 6)
Steady State (Note 5)
Steady State (Note 6)
Symbol
PD
PD
RθJA
TJ, TSTG
Value
1.3
10.4
1.3
94.5
73.3
-55 to +150
Units
W
mW/°C
W
mW/°C
°C/W
°C/W
°C
Notes:
5. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions, with the heat sink
split into two equal areas one for each drain connection.
6. For a device surface mounted on FR4 PCB measured at t 10 seconds.
7. Repetitive rating 50mm x 50mm x 1.6mm FR4 PCB, D = 0.02, pulse width 300μs - pulse width limited by maximum junction temperature. Refer to
Transient Thermal Impedance graph.
8. For device with one active die.
ZXMHC10A07T8
Document number: DS33510 Rev. 4 - 2
2 of 10
www.diodes.com
March 2015
© Diodes Incorporated









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ZXMHC10A07T8 Даташит, Описание, Даташиты
ZXMHC10A07T8
Electrical Characteristics N-CHANNEL (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 10)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 10)
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 9)
Forward Transfer Admittance (Notes 9 & 11)
Diode Forward Voltage (Note 9)
DYNAMIC CHARACTERISTICS (Note 11)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Symbol Min Typ Max Unit
BVDSS
100
V
IDSS
1.0 μA
IGSS
100 nA
VGS(TH)
RDS(ON)
gfs
VSD
2.0
4.0
0.7
0.9
1.6
0.95
V
S
V
Ciss 138
Coss 12
Crss
6
Qg 2.9
Qgs 0.7
Qgd 1.0
tD(ON)
1.8
tR 1.5
tD(OFF)
4.1
tF 2.1
tRR 27
Qrr 12
pF
nC
ns
ns
nC
Test Condition
VGS = 0V, ID = 250μA
VDS = 100V, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = VGS, ID = 250μA
VGS = 10V, ID = 1.5A
VGS = 6.0V, ID = 1.0A
VDS = 15V, ID = 1.0A
VGS = 0V, IS = 1.5A
VDS = 60V, VGS = 0V,
f = 1MHz
VDS = 50V, ID = 1.0A, VGS =
10V
VDD = 50V, VGS = 10V,
ID = 1.0A, RG = 6.0Ω
IS = 1.8A, di/dt = 100A/μs
Electrical Characteristics P-CHANNEL (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 10)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 10)
Gate Threshold Voltage
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
Static Drain-Source On-Resistance (Note 9)
RDS(ON)
Forward Transfer Admittance (Notes 9 & 11)
Diode Forward Voltage (Note 9)
DYNAMIC CHARACTERISTICS (Note 11)
gfs
VSD
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Charge (VGS = -5.0V)
Total Gate Charge (VGS = -10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Ciss
Coss
Crss
Qg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
Qrr
Notes:
9. Measured under pulsed conditions. Width≤300μs. Duty cycle ≤ 2%.
10. Short duration pulse test used to minimize self-heating effect.
11. Guaranteed by design. Not subject to product testing.
Min
-100
-2.0
Typ
1.2
-0.85
141
13.1
10.8
1.6
3.5
0.6
1.6
1.6
2.1
5.9
3.3
29
31
Max
-1.0
100
-4.0
1.0
1.45
-0.95
Unit
V
μA
nA
V
S
V
pF
pF
pF
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
Test Condition
VGS = 0V, ID = -250μA
VDS = -100V, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = VGS, ID = -250μA
VGS = -10V, ID = -0.6A
VGS = -6.0V, ID = -0.5A
VDS = -15V, ID = -0.6A
VGS = 0V, IS = -0.75A
VDS = -50V, VGS = 0V,
f = 1MHz
VDS = -50V, ID = -0.6A
VDD = -50V, VGS = -10V,
RG = 6.0Ω, ID = -1.0A
IS = -0.9A, di/dt = 100A/μs
ZXMHC10A07T8
Document number: DS33510 Rev. 4 - 2
3 of 10
www.diodes.com
March 2015
© Diodes Incorporated










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