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DMS2120LFWB PDF даташит

Спецификация DMS2120LFWB изготовлена ​​​​«Diodes» и имеет функцию, называемую «P-CHANNEL ENHANCEMENT MODE MOSFET».

Детали детали

Номер произв DMS2120LFWB
Описание P-CHANNEL ENHANCEMENT MODE MOSFET
Производители Diodes
логотип Diodes логотип 

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DMS2120LFWB Даташит, Описание, Даташиты
DMS2120LFWB
P-CHANNEL ENHANCEMENT MODE MOSFET WITH INTEGRATED SBR®
SUPER BARRIER RECTIFIER
Features
Low On-Resistance
95mΩ @VGS = -4.5V
120mΩ @VGS = -2.5V
150mΩ (typ) @VGS = -1.8V
Low Gate Threshold Voltage, -1.3V Max
Fast Switching Speed
Low Input/Output Leakage
Incorporates Low VF Super Barrier Rectifier (SBR)
Low Profile, 0.5mm Max Height
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: U-DFN3020-8 Type B
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – NiPdAu annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208 e4
Weight: 0.011 grams (approximate)
U-DFN3020-8
Type B
Top View
Bottom View
SK
G
DA
Equivalent Circuit
KA
KA
DS
DG
Bottom View
Pin Configuration
Ordering Information (Note 4)
Notes:
Part Number
DMS2120LFWB-7
Case
DFN3020B-8
Packaging
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
MF YM
MF = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: V = 2008)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2008
V
Jan
1
2009
W
Feb
2
2010
X
2011
Y
Mar Apr May
345
2012
Z
Jun
6
2013
A
Jul
7
2014
B
2015
C
2016
D
Aug Sep Oct Nov
8 9ON
2017
E
Dec
D
SBR is a registered trademark of Diodes Incorporated.
DMS2120LFWB
Document number: DS31667 Rev. 5 - 2
1 of 7
www.diodes.com
September 2012
© Diodes Incorporated









No Preview Available !

DMS2120LFWB Даташит, Описание, Даташиты
DMS2120LFWB
Maximum Ratings – TOTAL DEVICE (@TA = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
1.5
85
-55 to +150
Unit
W
°C/W
°C
Maximum Ratings – P-CHANNEL MOSFET – Q1 (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 5)
Pulsed Drain Current (Note 6)
Symbol
VDSS
VGSS
ID
IDM
Value
-20
±12
-2.9
-10
Units
V
V
A
A
Maximum Ratings – SBR – D1 (@TA = +25°C, unless otherwise specified.)
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current
8.3ms single half sine-wave superimposed on rated load
Symbol
VRRM
VRWM
VR
VR(RMS)
IO
IFSM
Value
20
14
1
3
Unit
V
V
A
A
Electrical Characteristics – P-CHANNEL MOSFET – Q1 (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 7)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol Min Typ Max Unit
Test Condition
BVDSS -20 ⎯ ⎯ V VGS = 0V, ID = -250μA
IDSS
⎯ ⎯ -1 μA VDS = -20V, VGS = 0V
IGSS
±100
±800
nA VGS = ±8V, VDS = 0V
VGS = ±12V, VDS = 0V
VGS(th) -0.45 -1.3 V VDS = VGS, ID = -250μA
70 95
VGS = -4.5V, ID = -2.8A
RDS (ON) 84 120 mΩ VGS = -2.5V, ID = -2.0A
100 150
VGS = -1.8V, ID = -1.0A
|Yfs| 8 S VDS = -5V, ID = -2.8A
VSD 0.42 -1.2 V VGS = 0V, IS = -1.0A
Ciss
Coss
Crss
632
65
54
pF
pF
VDS = -10V, VGS = 0V
f = 1.0MHz
pF
Electrical Characteristics – SBR – D1 (@TA = +25°C, unless otherwise specified.)
Characteristic
Reverse Breakdown Voltage (Note 7)
Forward Voltage
Reverse Current (Note 7)
Symbol
V(BR)R
VF
IR
Min
20
Typ
Notes:
5. Device mounted on FR-4 PCB, on minimum recommended, 2oz Copper pad layout.
6. Repetitive rating, pulse width limited by junction temperature.
7. Short duration pulse test used to minimize self-heating effect.
Max
0.45
0.52
80
Unit
V
V
μA
Test Condition
IR = 1mA
IF = 0.5A
IF = 1.0A
VR = 20V
SBR is a registered trademark of Diodes Incorporated.
DMS2120LFWB
Document number: DS31667 Rev. 5 - 2
2 of 7
www.diodes.com
September 2012
© Diodes Incorporated









No Preview Available !

DMS2120LFWB Даташит, Описание, Даташиты
10
VGS = -8.0V
VGS = -4.5V
8 VGS = -2.5V
VGS = -2.0V
6
Q1, P-CHANNEL MOSFET
10
VDS = -5V
8
6
DMS2120LFWB
4 VGS = -1.5V
2
0
0
0.14
0.12
0.1
VGS = -1.0V
VGS = -1.2V
1234
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
5
0.08 VGS = -1.8V
0.06
0.04
VGS = -2.5V
VGS = -4.5V
0.02
0
012 3 4 5 6 78
-ID, DRAIN CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
1.6
1.4
VGS = -2.5V
ID = -2A
1.2 VGS = -4.5V
ID = -5A
1.0
0.8
4
2
0
0.5
0.14
0.12
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
TA = -55°C
1 1.5
-VGS, GATE SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
2
0.1
0.08
0.06
0.04
0.02
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
TA = -55°C
0
012 3 4 56 78
-ID, DRAIN CURRENT (A)
Fig. 4 Typical Drain-Source On-Resistance
vs. Drain Current and Temperature
0.11
0.09
0.07
0.05
VGS = -2.5V
ID = -2A
VGS = -4.5V
ID = -5A
0.6
-50 -25 0 25 50 75 100 125 150
0.03
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
TJ, JUNCTION TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
SBR is a registered trademark of Diodes Incorporated.
DMS2120LFWB
Document number: DS31667 Rev. 5 - 2
3 of 7
www.diodes.com
September 2012
© Diodes Incorporated










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