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PDF CY7C1020CV33 Data sheet ( Hoja de datos )
| Número de pieza | CY7C1020CV33 | |
| Descripción | 512 K (32 K x 16) Static RAM | |
| Fabricantes | Cypress Semiconductor | |
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CY7C1020CV33
512 K (32 K × 16) Static RAM
512 K (32 K × 16) Static RAM
Features
■ Pin- and function-compatible with CY7C1020CV33
■ Temperature Ranges
❐ Commercial: 0 °C to 70 °C
❐ Industrial: –40 °C to 85 °C
❐ Automotive: –40 °C to 125 °C
■ High speed
❐ tAA = 10 ns
■ CMOS for optimum speed/power
■ Low active power
❐ 325 mW (max)
■ Automatic power-down when deselected
■ Independent control of upper and lower bits
■ Available in Pb-free and non Pb-free 44-pin TSOP II package
Logic Block Diagram
DATA IN DRIVERS
Functional Description
The CY7C1020CV33 is a high-performance CMOS static RAM
organized as 32,768 words by 16 bits. This device has an
automatic power-down feature that significantly reduces power
consumption when deselected.
Writing to the device is accomplished by taking Chip Enable (CE)
and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is
LOW, then data from I/O pins (I/O1 through I/O8), is written into
the location specified on the address pins (A0 through A14). If
Byte High Enable (BHE) is LOW, then data from I/O pins (I/O9
through I/O16) is written into the location specified on the address
pins (A0 through A14).
Reading from the device is accomplished by taking Chip Enable
(CE) and Output Enable (OE) LOW while forcing the Write
Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data
from the memory location specified by the address pins will
appear on I/O1 to I/O8. If Byte High Enable (BHE) is LOW, then
data from memory will appear on I/O9 to I/O16. See the truth table
at the back of this data sheet for a complete description of read
and write modes.
The input/output pins (I/O1 through I/O16) are placed in a
high-impedance state when the device is deselected (CE HIGH),
the outputs are disabled (OE HIGH), the BHE and BLE are
disabled (BHE, BLE HIGH), or during a write operation (CE LOW,
and WE LOW).
The CY7C1020CV33 is available in standard 44-pin TSOP Type
II package.
For a complete list of related resources, click here.
A7
A6
A5 32K × 16
A4 RAM Array
A3
A2
A1
A0
I/O1–I/O8
I/O9–I/O16
COLUMN DECODER
BHE
WE
CE
OE
BLE
Cypress Semiconductor Corporation • 198 Champion Court
Document Number: 38-05133 Rev. *L
• San Jose, CA 95134-1709 • 408-943-2600
Revised November 5, 2015
1 page  
CY7C1020CV33
Maximum Ratings
Exceeding maximum ratings may shorten the useful life of the
device. User guidelines are not tested.
Storage temperature ................................ –65 C to +150 C
Ambient temperature with
power applied .......................................... –55 C to +125 C
Supply voltage on
VCC to relative GND [2] ................................–0.5 V to +4.6 V
DC voltage applied to outputs
in high Z State [2] ................................ –0.5 V to VCC + 0.5 V
DC input voltage [2] ............................. –0.5 V to VCC + 0.5 V
Current into outputs (LOW) ........................................ 20 mA
Static discharge voltage
(per MIL-STD-883, method 3015) .......................... > 2001 V
Latch-up current .................................................... > 200 mA
Operating Range
Range
Commercial
Industrial
Automotive
Ambient Temperature
0 C to +70 C
–40 C to +85 C
–40 C to +125 C
VCC
3.3 V 10%
3.3 V 10%
3.3 V 10%
Electrical Characteristics
Over the Operating Range
Parameter
Description
Test Conditions
-10
Min Max
-12
Min Max
-15
Min Max
Unit
VOH
Output HIGH voltage
VCC = Min, IOH = –4.0 mA
2.4 – 2.4 – 2.4 –
V
VOL
Output LOW voltage
VCC = Min, IOL = 8.0 mA
– 0.4 – 0.4 – 0.4
V
VIH Input HIGH voltage
VIL Input LOW voltage [2]
2.0 VCC + 0.3 2.0 VCC + 0.3 2.0 VCC + 0.3 V
0.3 0.8 –0.3 0.8 –0.3 0.8
V
IIX
Input leakage current
GND < VI < VCC Commercial 1 +1 –1 +1 –1 +1
A
/ Industrial
Automotive – – – – –20 +20 A
IOZ
Output leakage current GND < VI < VCC, Commercial 1 +1 –1 +1 –1 +1
A
Output Disabled / Industrial
Automotive – – – – –20 +20 A
ICC
VCC operating supply
VCC = Max,
Commercial – 90 – 85 – 80 mA
current
IOUT = 0 mA,
/ Industrial
f = fMAX = 1/tRC Automotive – – – – – 85 mA
ISB1
Automatic CE power-down Max VCC,
Commercial – 15 – 15 – 15 mA
current – TTL Inputs
CE > VIH,
/ Industrial
VIN > VIH or
VIN < VIL,
Automotive –
–
–
–
– 20 mA
f = fMAX
ISB2
Automatic CE power-down Max VCC,
Commercial – 5 – 5 – 5 mA
current – CMOS inputs CE > VCC – 0.3 V, / Industrial
VIN > VCC – 0.3 V,
or VIN < 0.3 V,
Automotive
–
–
–
–
– 10 mA
f=0
Note
2. VIL(min) = –2.0 V and VIH(max) = VCC + 0.5 V for pulse durations of less than 20 ns.
Document Number: 38-05133 Rev. *L
Page 5 of 17
5 Page 
CY7C1020CV33
Truth Table
CE OE WE BLE BHE
I/O1–I/O8
H X X X X High Z
L L H L L Data out
L H Data out
H L High Z
L X L L L Data in
L H Data in
H L High Z
L H H X X High Z
L X X H H High Z
I/O9–I/O16
High Z
Data out
High Z
Data out
Data in
High Z
Data in
High Z
High Z
Mode
Power-down
Read – All bits
Read – Lower bits only
Read – Upper bits only
Write – All bits
Write – Lower bits only
Write – Upper bits only
Selected, outputs disabled
Selected, outputs disabled
Power
Standby (ISB)
Active (ICC)
Active (ICC)
Active (ICC)
Active (ICC)
Active (ICC)
Active (ICC)
Active (ICC)
Active (ICC)
Document Number: 38-05133 Rev. *L
Page 11 of 17
11 Page | ||
| Páginas | Total 17 Páginas | |
| PDF Descargar | [ Datasheet CY7C1020CV33.PDF ] | |
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