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PDF P3202CMG Data sheet ( Hoja de datos )
| Número de pieza | P3202CMG | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | NIKO-SEM | |
| Logotipo |  |
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NIKO-SEM
N-Channel Enhancement Mode P3202CMG
Field Effect Transistor
SOT-23
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
20 32mΩ
ID
5A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
Lead Temperature (1/16” from case for 10 sec.)
VGS
ID
IDM
PD
Tj, Tstg
TL
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Ambient
RθJA
1Pulse width limited by maximum junction temperature.
TYPICAL
75
1. GATE
2. DRAIN
3. SOURCE
LIMITS
±12
5
4
30
1.25
0.8
-55 to 150
275
UNITS
V
A
W
°C
MAXIMUM
100
UNITS
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current1
Drain-Source On-State
Resistance1
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(ON)
RDS(ON)
STATIC
VGS = 0V, ID = 250μA
VDS = VGS, ID = 250μA
VDS = 0V, VGS = ±12V
VDS = 16V, VGS = 0V
VDS = 16V, VGS = 0V, TJ = 70 °C
VDS = 10V, VGS = 10V
VGS = 1.8V, ID = 2A
VGS = 2.5V, ID = 4A
VGS = 4.5V, ID = 5A
LIMITS
MIN TYP MAX
UNIT
20
0.45 0.75 1.2
V
±100 nA
1
μA
10
5A
57 80
mΩ
38 50
27 32
REV 1.0
04-Feb-2009
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet P3202CMG.PDF ] | |
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