SP8M6FRA PDF даташит
Спецификация SP8M6FRA изготовлена «ROHM Semiconductor» и имеет функцию, называемую «MOSFET ( Transistor )». |
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Детали детали
Номер произв | SP8M6FRA |
Описание | MOSFET ( Transistor ) |
Производители | ROHM Semiconductor |
логотип |
8 Pages
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Transistors
4V Drive Nch+Pch MOSFET
SP8M6 FRA
SP8MS6PF8RMA6
AEC-Q101 Qualified
zStructure
Silicon N-channel / P-channel MOSFET
zDimensions (Unit : mm)
SOP8
zFeatures
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (SOP8).
zApplication
Power switching, DC / DC converter.
Each lead has same dimensions
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
SP8M6FRA
Taping
TB
2500
zAbsolute maximum ratings (Ta=25qC)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body diode)
Continuous
Pulsed
Total power dissipation
Channel temperature
Storage temperature
∗1 Pw≤10μs, Duty cycle≤1%
∗2 MOUNTED ON A CERAMIC BOARD.
Symbol
VDSS
VGSS
ID
IDP∗1
IS
ISP∗1
PD∗2
Tch
Tstg
zEquivalent circuit
(8) (7) (6) (5) (8) (7) (6) (5)
∗2 ∗2
(1) (2) (3) (4)
∗1 ∗1
(1) (2) (3) (4)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1) Tr1 (Nch) Source
(2) Tr1 (Nch) Gate
(3) Tr2 (Pch) Source
(4) Tr2 (Pch) Gate
(5) Tr2 (Pch) Drain
(6) Tr2 (Pch) Drain
(7) Tr1 (Nch) Drain
(8) Tr1 (Nch) Drain
∗A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
Limits
Nchannel Pchannel
30 −30
±20 ±20
±5.0
±3.5
±20 ±14
1.6 −1.6
20 −14
2
150
−55 to +150
Unit
V
V
A
A
A
A
W
°C
°C
zThermal resistance
Parameter
Channel to ambient
∗MOUNTED ON A CERAMIC BOARD.
Symbol
Rth (ch-a) ∗
Limits
62.5
Unit
°C / W
Rev.C
1/5
No Preview Available ! |
Transistors
N-ch
zElectrical characteristics (Ta=25qC)
Parameter
Symbol
Gate-source leakage
IGSS
Drain-source breakdown voltage V(BR) DSS
Zero gate voltage drain current IDSS
Gate threshold voltage
VGS (th)
Static drain-source on-state
resistance
RDS
∗
(on)
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
Yfs ∗
Ciss
Coss
Crss
td (on) ∗
tr ∗
td (off) ∗
tf ∗
Qg ∗
Qgs ∗
Qgd ∗
Min.
−
30
−
1.0
−
−
−
3.0
−
−
−
−
−
−
−
−
−
−
Typ.
−
−
−
−
36
52
58
−
230
80
50
6
8
22
5
3.9
1.1
1.4
Max.
±10
−
1
2.5
51
73
82
−
−
−
−
−
−
−
−
−
−
−
Unit Conditions
μA VGS=±20V, VDS=0V
V ID=1mA, VGS=0V
μA VDS=30V, VGS=0V
V VDS=10V, ID=1mA
ID=5.0A, VGS=10V
mΩ ID=5.0A, VGS=4.5V
ID=5.0A, VGS=4V
S ID=5.0A, VDS=10V
pF VDS=10V
pF VGS=0V
pF f=1MHz
ns ID=2.5A, VDD 15V
ns VGS=10V
ns RL=6.0Ω
ns RG=10Ω
nC VDD 15V
nC VGS=5V
nC ID=5.0A
zBody diode characteristics (Source-Drain) (Ta=25qC)
Parameter
Forward voltage
∗Pulsed
Symbol Min. Typ. Max. Unit
Conditions
VSD ∗
−
− 1.2 V IS=6.4A, VGS=0V
SP8MS6PF8RMA6
Rev.C
2/5
No Preview Available ! |
Transistors
P-ch
zElectrical characteristics (Ta=25qC)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS − − ±10 μA VGS= ±20V, VDS=0V
Drain-source breakdown voltage V(BR) DSS −30 − − V ID= −1mA, VGS=0V
Zero gate voltage drain current IDSS − − −1 μA VDS= −30V, VGS=0V
Gate threshold voltage
VGS (th) −1.0 − −2.5 V VDS= −10V, ID= −1mA
Static drain-source on-state
resistance
RDS
∗
(on)
−
−
−
65 90
ID= −3.5A, VGS= −10V
100 140 mΩ ID= −1.75A, VGS= −4.5V
120 165
ID= −1.75A, VGS= −4.0V
Forward transfer admittance
Yfs ∗ 1.8
−
−
S ID= −1.75A, VDS= −10V
Input capacitance
Ciss − 490 − pF VDS= −10V
Output capacitance
Coss
− 110 −
pF VGS=0V
Reverse transfer capacitance Crss
− 75 − pF f=1MHz
Turn-on delay time
td (on) ∗ − 10 − ns ID= −1.75A, VDD −15V
Rise time
tr ∗ − 15 − ns VGS= −10V
Turn-off delay time
td (off) ∗ − 35 − ns RL=8.57Ω
Fall time
tf ∗ − 10 − ns RG=10Ω
Total gate charge
Qg ∗ − 5.5 − nC VDD −15V
Gate-source charge
Qgs ∗ − 1.5 − nC VGS= −5V
Gate-drain charge
Qgd ∗ − 2.0 − nC ID= −3.5A
∗Pulsed
zBody diode characteristics (Source-Drain) (Ta=25qC)
Parameter
Forward voltage
Symbol Min. Typ. Max. Unit
Conditions
VSD − − −1.2 V IS= −1.0A, VGS=0V
SP8MS6PF8RMA6
Rev.C
3/5
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Номер в каталоге | Описание | Производители |
SP8M6FRA | MOSFET ( Transistor ) | ROHM Semiconductor |
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DataSheet26.com | 2020 | Контакты | Поиск |