SP8M4FRA PDF даташит
Спецификация SP8M4FRA изготовлена «ROHM Semiconductor» и имеет функцию, называемую «30V Nch+Pch Power MOSFET». |
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Детали детали
Номер произв | SP8M4FRA |
Описание | 30V Nch+Pch Power MOSFET |
Производители | ROHM Semiconductor |
логотип |
23 Pages
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SP8M4FRA
30V Nch+Pch Power MOSFET
Symbol
VDSS
RDS(on)(Max.)
ID
PD
Tr1:Nch Tr2:Pch
30V -30V
18mΩ 28mΩ
±9.0A ±7.0A
2.0W
lFeatures
1) Low on - resistance.
2) Small Surface Mount Package (SOP8).
3) Pb-free lead plating ; RoHS compliant.
4) AEC-Q101 Qualified
lOutline
SOP8
lInner circuit
Datasheet
lPackaging specifications
Packing
Embossed
Tape
lApplication
Reel size (mm)
330
Switching
Type Tape width (mm)
Basic ordering unit (pcs)
12
2500
Taping code
TB
Marking
SP8M4
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Tr1:Nch Tr2:Pch
Unit
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Power dissipation
total
Junction temperature
Operating junction and storage temperature range
VDSS
30 -30
V
ID
±9.0 ±7.0
A
IDP*1
±36 ±28
A
VGSS
±20 ±20
V
PD*2 2.0
W
PD*3 1.4
Tj 150 ℃
Tstg
-55 to +150
℃
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
1/19
20161019 - Rev.001
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SP8M4FRA
lThermal resistance
Parameter
Thermal resistance, junction - ambient
total
Datasheet
Symbol
RthJA*2
RthJA*3
Values
Min. Typ. Max.
- - 62.5
- - 89.2
Unit
℃/W
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol Type
Conditions
Drain - Source breakdown
voltage
Breakdown voltage
temperature coefficient
Tr1
V(BR)DSS
Tr2
ΔV(BR)DSS Tr1
ΔTj Tr2
VGS = 0V, ID = 1mA
VGS = 0V, ID = -1mA
ID = 1mA, referenced to 25℃
ID = -1mA, referenced to 25℃
Zero gate voltage
drain current
IDSS Tr1 VDS = 30V, VGS = 0V
Tr2 VDS = -30V, VGS = 0V
Gate - Source
leakage current
IGSS
Tr1 VDS = 0V, VGS = ±20V
Tr2 VDS = 0V, VGS = ±20V
Gate threshold
voltage
Gate threshold voltage
temperature coefficient
VGS(th)
Tr1
Tr2
ΔVGS(th) Tr1
ΔTj Tr2
VDS = 10V, ID = 1mA
VDS = -10V, ID = -1mA
ID = 1mA, referenced to 25℃
ID = -1mA, referenced to 25℃
VGS = 10V, ID = 9A
Tr1 VGS = 4.5V, ID = 9A
Static drain - source
on - state resistance
RDS(on)*4
VGS = 4.0V, ID = 9A
VGS = -10V, ID = -7A
Tr2 VGS = -4.5V, ID = -3.5A
VGS = -4.0V, ID = -3.5A
Gate resistance
Tr1
RG
f=1MHz, open drain
Tr2
Forward Transfer
Admittance
|Yfs|*4 Tr1 VDS = 10V, ID = 9A
Tr2 VDS = -10V, ID = -3.5A
*1 Pw ≦ 10μs, Duty cycle ≦ 1%
*2 Mounted on a ceramic board (30×30×0.8mm)
*3 Mounted on a FR4 (25×25×0.8mm)
*4 Pulsed
Values
Unit
Min. Typ. Max.
30 - -
V
-30 - -
- 29.0 -
mV/℃
- -20.7 -
- -1
μA
- - -1
- - ±10
μA
- - ±10
1.0 - 2.5
V
-1.0 - -2.5
- -1.6 -
mV/℃
- 3.1 -
- 12 18
- 16 24
- 17 25
mΩ
- 20 28
- 25 35
- 30 42
- 2.9 -
- 3.7 -
Ω
7.0 - -
S
6.0 - -
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
2/19
20161019 - Rev.001
No Preview Available ! |
SP8M4FRA
lElectrical characteristics (Ta = 25°C)
<Tr1>
Parameter
Symbol
Conditions
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Ciss
Coss
Crss
td(on)*4
tr*4
td(off)*4
tf*4
VGS = 0V
VDS = 10V
f = 1MHz
VDD ⋍ 15V, VGS = 10V
ID = 4.5A
RL = 3.33Ω
RG = 10Ω
<Tr2>
Parameter
Symbol
Conditions
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Ciss
Coss
Crss
td(on)*4
tr*4
td(off)*4
tf*4
VGS = 0V
VDS = -10V
f = 1MHz
VDD ⋍ -15V, VGS = -10V
ID = -3.5A
RL = 4.29Ω
RG = 10Ω
Datasheet
Values
Min. Typ. Max.
- 1190 -
- 340 -
- 190 -
- 10 -
- 15 -
- 55 -
- 22 -
Unit
pF
ns
Values
Min. Typ. Max.
- 2600 -
- 450 -
- 350 -
- 20 -
- 50 -
- 110 -
- 70 -
Unit
pF
ns
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
3/19
20161019 - Rev.001
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Номер в каталоге | Описание | Производители |
SP8M4FRA | 30V Nch+Pch Power MOSFET | ROHM Semiconductor |
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