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SP8K2FRA PDF даташит

Спецификация SP8K2FRA изготовлена ​​​​«ROHM Semiconductor» и имеет функцию, называемую «30V Nch+Nch Middle Power MOSFET».

Детали детали

Номер произв SP8K2FRA
Описание 30V Nch+Nch Middle Power MOSFET
Производители ROHM Semiconductor
логотип ROHM Semiconductor логотип 

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SP8K2FRA Даташит, Описание, Даташиты
SP8K2FRA
  30V Nch+Nch Middle Power MOSFET
VDSS
RDS(on)(Max.)
ID
PD
30V
30mΩ
±6.0A
2.0W
lFeatures
1) Low on - resistance.
2) Small Surface Mount Package (SOP8).
3) Pb-free lead plating ; RoHS compliant.
4) Halogen Free.
5) AEC-Q101 Qualified
lOutline
SOP8
 
      
lInner circuit
   Datasheet
 
lApplication
Switching
Motor Drive
lPackaging specifications
Packing
Reel size (mm)
Type Tape width (mm)
Basic ordering unit (pcs)
Taping code
Marking
Embossed
Tape
330
12
2500
TB
SP8K2
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) <Tr1 and Tr2>
Parameter
Symbol
Value
Unit
Drain - Source voltage
VDSS
30 V
Continuous drain current
Pulsed drain current
ID ±6.0 A
IDP*1 ±24 A
Gate - Source voltage
VGSS
±20 V
Power dissipation (total)
PD*2 2.0
W
PD*3 1.4
Junction temperature
Tj 150
Operating junction and storage temperature range
Tstg
-55 to +150
                                                                                        
                                                                                        
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
1/11
20160801 - Rev.001









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SP8K2FRA Даташит, Описание, Даташиты
SP8K2FRA
          
lThermal resistance
Parameter
Thermal resistance, junction - ambient (total)
                Datasheet
                       
Symbol
RthJA*2
RthJA*3
Values
Min. Typ. Max.
- - 62.5
- - 89.2
Unit
/W
lElectrical characteristics (Ta = 25°C) <Tr1 and Tr2>
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
Breakdown voltage
temperature coefficient
Zero gate voltage
drain current
Gate - Source
leakage current
Gate threshold
voltage
Gate threshold voltage
temperature coefficient
Static drain - source
on - state resistance
Gate resistance
Forward Transfer
Admittance
V(BR)DSS VGS = 0V, ID = 1mA
ΔV(BR)DSS ID = 1mA
  ΔTj  referenced to 25
IDSS VDS = 30V, VGS = 0V
IGSS VDS = 0V, VGS = ±20V
VGS(th) VDS = 10V, ID = 1mA
ΔVGS(th) ID = 1mA
  ΔTj  referenced to 25
VGS = 10V, ID = 6A
RDS(on)*4 VGS = 4.5V, ID = 6A
VGS = 4.0V, ID = 6A
RG f = 1MHz, open drain
|Yfs|*4 VDS = 10V, ID = 6A
Values
Min. Typ. Max.
   
Unit
30 - - V
- 29 - mV/
- - 1 μA
- - ±10 μA
1.0 - 2.5 V
- -1.6 - mV/
- 21 30
- 30 42 mΩ
- 33 47
- 4.1 - Ω
4.0 - - S
*1 Pw 10μs, Duty cycle 1%
*2 Mounted on a ceramic board (30×30×0.8mm)
*3 Mounted on a FR4 (25×25×0.8mm)
*4 Pulsed
                                                                                               
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
2/11
20160801 - Rev.001









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SP8K2FRA Даташит, Описание, Даташиты
SP8K2FRA
      
lElectrical characteristics (Ta = 25°C) <Tr1 and Tr2>
Parameter
Symbol
Conditions
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Ciss
Coss
Crss
td(on)*4
tr*4
td(off)*4
tf*4
VGS = 0V
VDS = 10V
f = 1MHz
VDD 15V,VGS = 10V
ID = 3A
RL = 5Ω
RG = 10Ω
        
Datasheet
Values
Min. Typ. Max.
- 520 -
- 150 -
- 95 -
-9-
- 21 -
- 36 -
- 13 -
Unit
pF
ns
lGate charge characteristics (Ta = 25°C) <Tr1 and Tr2>
Parameter
Symbol
Conditions
Total gate charge
Gate - Source charge
Gate - Drain charge
Qg*4
Qgs*4
Qgd*4
VDD 15V, ID = 6A
VGS = 5V
Values
Min. Typ. Max.
- 7.2 10.1
- 1.8 -
- 2.8 -
Unit
nC
lBody diode electrical characteristics (Source-Drain) (Ta = 25°C)
<Tr1 and Tr2>
Parameter
Symbol
Conditions
Values
Min. Typ. Max.
Continuous forward current
Pulse forward current
IS
Ta = 25
ISP*1
- - 1.6
- - 6.4
Forward voltage
VSD*4 VGS = 0V, IS = 6.4A - - 1.2
Unit
A
V
                                                                                          
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
3/11
20160801 - Rev.001










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