SP8J5 PDF даташит
Спецификация SP8J5 изготовлена «ROHM Semiconductor» и имеет функцию, называемую «4V Drive Pch+Pch MOS FET». |
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Детали детали
Номер произв | SP8J5 |
Описание | 4V Drive Pch+Pch MOS FET |
Производители | ROHM Semiconductor |
логотип |
5 Pages
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Transistors
4V Drive Pch+Pch MOS FET
SP8J5
SP8J5
zStructure
Silicon P-channel MOS FET
zFeatures
1) Low On-resistance. (25mΩ at 4.5V)
2) High Power Package. (PD=2.0W)
3) High speed switching.
4) Low voltage drive. (4V)
zApplications
Power switching, DC-DC converter
zExternal dimensions (Unit : mm)
SOP8
5.0
0.4
1.75
(8) (5)
1pin mark
(1)
1.27
(4)
0.2
Each lead has same dimensions
zPackaging specifications
Type
Package
Code
Basic ordering unit (pieces)
SP8J5
Taping
TB
2500
zInner circuit
(8) (7) (6)
(5)
∗2 ∗2
∗1 ∗1
zAbsolute maximum ratings (Ta=25°C)
<It is the same ratings for Tr1 and Tr2.>
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body diode)
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of Storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
Symbol
VDSS
VGSS
ID
IDP ∗1
IS
ISP ∗1
PD ∗2
Tch
Tstg
(1) (2) (3)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
Limits
−30
±20
±7.0
±28
−1.6
−28
2.0
150
−55 to +150
Unit
V
V
A
A
A
A
W
°C
°C
(4)
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
zThermal resistance
Parameter
Channel to ambient
∗ Mounted on a ceramic board.
Symbol
Rth(ch-a) ∗
Limits
62.5
Unit
°C / W
Rev.A
1/4
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Transistors
zElectrical characteristics (Ta=25°C)
<It is the same characteristics for Tr1 and Tr2.>
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS − − ±10 µA VGS=±20V, VDS=0V
Drain-source breakdown voltage V(BR) DSS −30 − − V ID= −1mA, VGS=0V
Zero gate voltage drain current IDSS − − −1 µA VDS= −30V, VGS=0V
Gate threshold voltage
VGS (th) −1.0 − −2.5 V VDS= −10V, ID= −1mA
Static drain-source on-state
resistance
∗
RDS (on)
−
−
−
20 28 mΩ ID= −7A, VGS= −10V
25 35 mΩ ID= −3.5A, VGS= −4.5V
30 42 mΩ ID= −3.5A, VGS= −4.0V
Forward transfer admittance
Yfs ∗ 6.0
−
−
S VDS= −10V, ID= −3.5A
Input capacitance
Ciss
− 2600 −
pF VDS= −10V
Output capacitance
Coss − 450 − pF VGS=0V
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Crss
td (on) ∗
tr ∗
td (off) ∗
tf ∗
Qg ∗
Qgs ∗
Qgd ∗
−
−
−
−
−
−
−
−
350 −
20 −
50 −
110 −
70 −
25 −
5.5 −
10 −
pF f=1MHz
ns ID= −3.5A
ns VDD −15V
VGS= −10V
ns RL=4.3Ω
ns RG=10Ω
nC VDD −15V
nC VGS= −5V
nC ID= −7A
∗Pulsed
zBody diode characteristics (Source-drain) (Ta=25°C)
<It is the same characteristics for Tr1 and Tr2.>
Parameter
Forward voltage
Symbol Min. Typ. Max. Unit
Conditions
VSD − − −1.2 V IS= −1.6A, VGS=0V
SP8J5
Rev.A
2/4
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Transistors
zElectrical characteristic curves
10
VDS= −10V
Pulsed
1 Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
0.1
0.01
1000
100 VGS= −4V
VGS= −4.5V
VGS= −10V
10
Ta=25°C
Pulsed
0.001
1.0 1.5 2.0 2.5 3.0
GATE-SOURCE VOLTAGE : −VGS (V)
Fig.1 Typical Transfer Characteristics
1
0.1 1 10
DRAIN CURRENT : −ID (A)
Fig.2 Static Drain-Source On-State
Resistance vs. Drain Current
SP8J5
100
VGS= −10V
Pulsed
10
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
1
0.1 1
10
DRAIN CURRENT : −ID (A)
Fig.3 Static Drain-Source On-State
Resistance vs. Drain Current
1000
100
VGS= −4.5V
Pulsed
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
100
VGS= −4V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
10
Ta=125°C
Ta=75°C
Ta=25°C
1 Ta= −25°C
0.1
VGS=0V
Pulsed
10
0.1 1 10
DRAIN CURRENT : −ID (A)
Fig.4 Static Drain-Source On-State
vs. Drain Current
10
0.1 1 10
DRAIN CURRENT : −ID (A)
Fig.5 Static Drain-Source On-State
vs. Drain Current
0.01
0.0 0.5 1.0 1.5
SOURCE-DRAIN VOLTAGE : −VSD (V)
Fig.6 Reverse Drain Current
Source-Drain Current
10000
1000
Ta=25°C
f=1MHz
VGS=0V
Ciss
Coss
Crss
100
0.01
0.1
1
10 100
DRAIN-SOURCE VOLTAGE : −VDS (V)
Fig.7 Typical Capacitance
vs. Drain-Source Voltage
10000
1000
100
tf
td (off)
10
Ta=25°C
VDD= −15V
VGS= −10V
RG=10Ω
Pulsed
td (on)
tr
1
0.01 0.1 1 10
DRAIN CURRENT : −ID (A)
Fig.8 Switching Characteristics
8
Ta=25°C
7 VDD= −15V
ID= −7A
6 RG=10Ω
Pulsed
5
4
3
2
1
0
0 5 10 15 20 25 30
TOTAL GATE CHARGE : Qg (nC)
Fig.9 Dynamic Input Characteristics
Rev.A
3/4
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