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PDF MTBH0N25L3 Data sheet ( Hoja de datos )
| Número de pieza | MTBH0N25L3 | |
| Descripción | N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | Cystech Electonics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MTBH0N25L3 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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CYStech Electronics Corp.
Spec. No. : C895L3
Issued Date : 2016.11.26
Revised Date :
Page No. : 1/9
N-Channel Enhancement Mode MOSFET
MTBH0N25L3
Features
• Low Gate Charge
• Simple Drive Requirement
• Pb-free lead plating & Halogen-free package
BVDSS
ID @ VGS=10V, TA=25°C
RDSON@VGS=10V, ID=1A
RDSON@VGS=4.5V, ID=1A
250V
1.2A
722mΩ (typ.)
732mΩ (typ.)
Equivalent Circuit
MTBH0N25L3
G：Gate D：Drain
S：Source
Outline
SOT-223
D
S
D
G
Ordering Information
Device
MTBH0N25L3-0-T3-G
Package
SOT-223
(Pb-free lead plating & Halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTBH0N25L3
Preliminary
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C895L3
Issued Date : 2016.11.26
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
1000
Ciss
Threshold Voltage vs Junction Tempearture
1.5
1.3
100
C oss
10
0
Crss
10 20 30 40 50 60 70 80
VDS, Drain-Source Voltage(V)
90 100
Forward Transfer Admittance vs Drain Current
10
VDS=10V
1 VDS=15V
1.1 ID=1mA
0.9
0.7 ID=250μA
0.5
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
8 VDS=125V
6 VDS=200V
0.1
0.01
0.001
Pulsed
Ta=25°C
0.01 0.1
1
ID, Drain Current(A)
10
Maximum Safe Operating Area
10
RDS(ON)
Limit ed
1 10μs
100μs
0.1
0.01
TA=25°C, Tj=150°C,
RθJA=50°C/W,
Single Pulse
1ms
10ms
100ms
DC
0.001
0.1
1 10 100
VDS, Drain-Source Voltage(V)
1000
4
2
ID=1A
0
0 2 4 6 8 10 12 14
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Junction Temperature
1.4
1.2
1
0.8
0.6
0.4
0.2 VGS=10V, RθJA=50°C/W
0
25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTBH0N25L3
Preliminary
CYStek Product Specification
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet MTBH0N25L3.PDF ] | |
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