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AE512 PDF даташит

Спецификация AE512 изготовлена ​​​​«RFHIC» и имеет функцию, называемую «E-pHEMT MMIC».

Детали детали

Номер произв AE512
Описание E-pHEMT MMIC
Производители RFHIC
логотип RFHIC логотип 

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AE512 Даташит, Описание, Даташиты
E-pHEMT MMIC
Product Features
• 30 ~ 2150MHz
• High Gain
• High linearity
• SOIC-8 SMD Type package
• Lower manufacturing cost
• Low Noise Figure
• -65dBc CSO 79 Channels @ +30dBmV/ch
• -61dBc CTB 79 Channels @ +30dBmV/ch
AE512
Applications
• Low Noise Amplifier for CATV
• Cable Modem
• FTTH (G-PON, GE-PON)
• Optical node
Package Type : SOIC-8
Description
AE512 is designed as low cost drive amplifiers for many applications including FTTH, CATV System.
This MMIC is based on Gallium Arsenide Enhancement Mode pHEMT which shows low current draw and very low noise.
The data in this spec sheet is valid only for 75ohm application. 50ohm data is in a separate spec sheet.
Electrical Specifications
PARAMETER
Frequency
UNIT
MHz
MIN
30
TYP
-
MAX
2150
Gain
15 17
dB 13 15
-
-
Gain Flatness
dB - 0.4 -
Input Return Loss
dB - -12 -
Output Return Loss
dB - -13 -
Output IP3
dBm 30
34
-
1dB Compression Point
dBm 18
20
-
Noise Figure
dB - 1.5 2.0
CSO
CTB
dBc - -65 -60
30 ~ 1004MHz
dBc - -61 -56
DC Current
mA - 100 -
Note
1. Test conditions unless otherwise noted. Test Freq = 500MHz, T=25, Vdd=5V, 75Ω system
2. OIP3 measured with 2 tones at an output power of +5dBm/tone separated by 1MHz, Test Freq = 500MHz
CONDITION
-
30 ~ 1000MHz
50 ~ 2150MHz
30 ~ 1000MHz
-
-
@ 500MHz/5dBm 2tone
@500MHz
30 ~ 1000MHz
79 channel, +30dBmV/ch
Vdd = 5.0V
Absolute Maximum Ratings
PARAMETER
Device Voltage
Operating Temperature
Storage Temperature
ESD Human Body Model
Moisture Sensitivity Level
Junction Temperature (Tj)
Thermal Resistance (Rth)
UNIT
VDC
-
-
/W
MIN
-
-40
-40
-
-
-
-
TYP
5
-
-
Class 1B
MSL1
-
40
MAX
8
85
150
-
-
180
-
Korean Facilities : 82-31-8069-3036 / [email protected]
US Facility : 919-677-8780 / [email protected]
1/6
All specifications may change without notice
Version 1.3









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AE512 Даташит, Описание, Даташиты
E-pHEMT MMIC
AE512
Application Circuit @ 30 ~ 1000MHz, 75ohm System, VDD=5V
Typical Performance @ VDD=5V, IDS=100mA, T=25, 75ohm System
PARAMETER
Frequency
Gain(S21)
Input Return Loss(S11)
Output Return Loss(S22)
Output IP3
1dB Compression Point
Noise Figure
CSO*
CTB*
Current
* 79channels_Flat, +30dBmV
UNIT
MHz
dB
dB
dB
dBm
dBm
dB
dBc
dBc
mA
TYPICAL
30 500 1000
16.9 16.9 16.9
-9 -25 -20
-11.5 -19 -14
31.5 34 33
18.5 20 19.5
1.4 1.5 1.8
-65
-61
100
S-Parameter
25 30
20 S21
15
20
10
10 0
5
S22
-10
0 -20
S11
-5 -30
0.0 0.2 0.4 0.6 0.8 1.0 1.2
Freq(GHz)
Frequency vs. Noise Figure
5
4
3
2
1
0
30 200 400 600 800 1000
Freq(MHz)
25
23
21
19
17
15
30
Frequency vs. P1dB
200 400 600 800 1000
Freq(MHz)
Korean Facilities : 82-31-8069-3036 / [email protected]
US Facility : 919-677-8780 / [email protected]
2/6
All specifications may change without notice
Version 1.3









No Preview Available !

AE512 Даташит, Описание, Даташиты
E-pHEMT MMIC
35
33
31
29
27
25
30
Frequency vs. OIP3
200 400 600 800
Freq(MHz)
AE512
1000
Application Circuit @ 30 ~ 2150MHz, 75ohm System, VDD=5V
Typical Performance @ VDD=5V, IDS=100mA, T=25, 75ohm System
PARAMETER
Frequency
Gain(S21)
Input Return Loss(S11)
Output Return Loss(S22)
Output IP3
1dB Compression Point
Noise Figure
CSO*
CTB*
Current
* 79channels_Flat, +30dBmV
Units
MHz
dB
dB
dB
dBm
dBm
dB
dBc
dBc
mA
Typical
50 1000 2150
15.4 15.3 13.3
-12.5 -17 -8.5
-14.5 -11 -8.5
31.7 34.3 33
18 20.8 19
1.8 2.1 3.5
-65
-61
100
S-Parameter
20
S21
15
30
20
10 10
5
S22
0
-5 S11
0
-10
-20
-10 -30
0.0 0.5 1.0 1.5 2.0 2.5 3.0
Freq(GHz)
Korean Facilities : 82-31-8069-3036 / [email protected]
US Facility : 919-677-8780 / [email protected]
3/6
All specifications may change without notice
Version 1.3










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