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TC551001BTRL-85L PDF даташит

Спецификация TC551001BTRL-85L изготовлена ​​​​«Toshiba» и имеет функцию, называемую «SILICON GATE CMOS STATIC RAM».

Детали детали

Номер произв TC551001BTRL-85L
Описание SILICON GATE CMOS STATIC RAM
Производители Toshiba
логотип Toshiba логотип 

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TC551001BTRL-85L Даташит, Описание, Даташиты
TOSHIBA
TC551001BPL/BFL/BFIL/BTRL-70L/85L/IOL
SILICON GATE CMOS
131,072 WORD x 8 BIT STATIC RAM
Description
The TC551 001 BPL is a 1,048,576 bit CMOS static random access memory organized as 131,072 words by 8 bits and operated
from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an operating cur-
rent of 5mNMHz (typ.) and a minimum cycle time of 70ns. When CE1 is a logical high, or CE2 is low, the device is placed in a low
power standby mode in which the standby current is 2j.tA typically. The TC551 001 BPL has three control inputs. Chip enable inputs
(CE1, CE2) allow for device selection and data retention control, while an output enable input (OE) provides fast memory access.
The TC551 001 BPL is suitable for use in microprocessor systems where high speed, low power, and battery backup are required.
The TC551 001 BPL is offered in a standard dual-in-line 32-pin plastic package, a small outline plastic package, and a thin small
outline plastic package (forward type, reverse type).
Features
Pin Connection (Top View)
• Low power dissipation:
• Standby current:
• Single 5V power supply
27.5mW/MHz (typ.)
4j.tA (max.) at Ta = 25°C
• Access time (max.)
TC551 001 BPl/BFl/BFTL/BTRl
Access Time
GET Access Time
CE2 Access Time
OE Access Time
·70l
70ns
70ns
70ns
35ns
·85l
85ns
85ns
85ns
45ns
·10l
100ns
100ns
100ns
50ns
• Power down feature:
CE1, CE2
• Data retention supply voltage:
2.0 - 5.5V
• Inputs and outputs TIL compatible
• Package
TC551 001 BPL : DIP32-P-600
NC
At6
At4
At2
A7
A6
AS
A4
A3
A2
A1
AO
1/01
1/02
1103
GND
VDO
AtS
CE2
R/W
At3
A8
A9
At1
'M
Ar1n0
1/08
1/07
1/06
1/05
1/04
TC551001BFL : SOP32-P-525
Pin Names
TC551001BFTL : TSOP32-P-0820
TC551 001 BTRL : TSOP32-P-0820A
AO - A16 Address Inputs
RIW
ReadIWrite Control Input
OE Output Enable Input
CE1, CE2 Chip Enable Inputs
1/01 - 1/08 Data Input/Output
Voo
GND
Power (+5V)
Ground
NC No Connection
032 PIN TSOP
(forward type) (reverse type)
16 16
17 32 32 17
PIN NO.
12
34 5
6
7
8
9 10 11 12 13 14 15 16
PIN NAME A11 Ag As A13 RIW CE2 A15 Voo NC A16 A14 A12 A7 A6 A5 A4
PIN NO. 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32
PIN NAME A3 A2 A1 Ao 1/01 1/02 1/03 GND 1/04 1/05 1/06 1/07 1/08 CE1 A10 OE
TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC.
A-133









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TC551001BTRL-85L Даташит, Описание, Даташиты
TC551 001 BPUBFUBFTUBTRL-70U85U1 OL
Block Diagram
Static RAM
...--0 Voo
V\
:: MEMORY CELL
..--0 GND
8~a: ARRAY
~ 1024 )( 128)( 8
~~ ~jI L-~D-I-;:-_1/01
~
(1048576)
II
O-.....----.,-,H--xR---i SENSE AMP.
~-J COLUMN ADDRESS
r-i:::':::H-----,
:;;;;J;:.,:-l.I:....:>...'. -I---.
~ a:
~J (I U to K I
'---f..>.. +---.
o-~H-M-~~ ~
o-H-H-~r-tov
~:g
COLUMN ADDRESS
REGISTER
:::'
.........
1/08 -
'-r-
~~
-J W
-..J
I
COLUMN
I
ADDRESS
~ ! b!VI.!' -,
BUFfER
bbbb
tE
AOA1 A2 A3A4A5A6
OE -o--------~~
R)-PJW
CET -.... rt-t>-+---...... CE
eE2 o--t,><>-J
Operating Mode
~MODE
CE1 CE2 OE R/W 1/01 -1/08 POWER
Read
Write
Output Deselect
Standby
L
H
L
H
DOUT
1000
L H * L DIN 1000
L
H
H
H
High-Z
1000
H
*
*
*
High-Z
loos
*
L
*
*
High-Z
loos
• H orL
Maximum Ratings
SYMBOL
ITEM
Voo Power Supply Voltage
VIN Input Voltage
V1/0 Input and Output Voltage
Po Power Dissipation
TSOLOER Soldering Temperature • Time
TSTRG Storage Temperature
TOPR Operating Temperature
• -3.0V with a pulse width of 50ns
•• SOP
RATING
-0.3 - 7.0
-0.3* - 7.0
-0.5 - Voo + 0.5
1.0/0.6**
260· 10
-55 - 150
0-70
UNIT
V
V
V
W
°C· sec
°C
°C
A-134
TOSHIBA AMERICA ELECTRONIC COMPONENTS. INC.









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TC551001BTRL-85L Даташит, Описание, Даташиты
Static RAM
TC551 001 BPUBFUBFTUBTRL-70U85U1 OL
DC Recommended Operating Conditions
SYMBOL
PARAMETER
Voo Power Supply Voltage
VIH Input High Voltage
Vil Input Low Voltage
VOH Data Retention Supply Voltage
, -3.0V with a pulse width of 50ns
MIN.
4.5
2.2
-0.3*
2.0
TYP. MAX. UNIT
5.0 5.5
- Voo + 0.3
V
- 0.8
- 5.5
DC Characteristics (Ta = 0 - 70°C, Voo = 5V±10%)
SYMBOL
PARAMETER
TEST CONDITION
MIN. TYP.
III Input Leakage Current
ILO Output Leakage Current
10H Output High Current
10l Output Low Current
10001
Operating Current
10002
10081
10082(1) Standby Current
VIN =0 - Voo
CE1 =V1H or CE2 =VIL or RIW =VIL or
OE =VIH, VOUT =0 - Voo
VOH =2.4V
VOL =O.4V
CE1 =V1l and CE2 =VIH
and RIW =VIH,
lOUT =OmA
Other Inputs =VIHNIL
CE1 =0.2V and
CE2 =Voo - 0.2V
RIW =Voo - 0.2V
lOUT =OmA
Other Inputs
=Voo - 0.2V/0.2V
tcycle
Min.
1f.Ls
Min.
tcycle
1f.Ls
CE1 =V1H or CE2 =Vil
CE1 =Voo - 0.2V or
CE2 =0.2V
Voo =2.0V - 5.5V
Ta =0 - 70°C
Ta =25°C
-
-
-1.0
4.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2
Note (1): If CE1 ;:: VDD - 0.2V, the specified limits are guaranteed under the condition CE2 ;:: VDD - 0.2V or CE2 ::; 0.2V.
= =Capacitance* (Ta 25°C, f 1MHz)
SYMBOL
PARAMETER
CIN Input Capacitance
COUT Output Capacitance
TEST CONDITION
VIN =GND
VOUT =GND
'This parameter is periodically sampled and is not 100% tested.
MAX.
10
10
UNIT
pF
MAX.
±1.0
±1.0
-
-
70
20
60
10
3
30
4
UNIT
JlA
f.LA
mA
mA
mA
mA
JlA
TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC.
A-135










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