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TC518512FTL-80 PDF даташит

Спецификация TC518512FTL-80 изготовлена ​​​​«Toshiba» и имеет функцию, называемую «SILICON GATE CMOS PSEUDO STATIC RAM».

Детали детали

Номер произв TC518512FTL-80
Описание SILICON GATE CMOS PSEUDO STATIC RAM
Производители Toshiba
логотип Toshiba логотип 

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TC518512FTL-80 Даташит, Описание, Даташиты
TOSHIBA
TC518512PL/FL/FIL/TRL-70/00/10
SILICON GATE CMOS
524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM
Description
The TC518512PL is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 words by 8 bits. The TC518512PL utilizes
a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, .!:!!gh speed and low power storage. The
TC518512PL operates from a single 5V power supply. Refreshing is supported by a refresh (OEIRFSH) input which enables two
types of refreshing - auto refresh and self refresh. The TC518512PL features a static RAM-like interface with a write cycle in which
the input data is written into the memory cell at the rising edge of RIVI/ thus simplifying the microprocessor interface.
The TC518512PL is available in a 32-pin, 0.6 inch width plastic DIP, a small outline plastic flat package, and a thin small outline
package (forward type, reverse type).
Features
• Organization: 524,288 words x 8 bits
• Single 5V power supply
• Fast access time
TC518512PL Family
tCEA IT Access Time
tOEA O'E' Access Time
tRC Cycle Time
Power Dissipation
Self Refresh Current
-70
70ns
30ns
115ns
385mW
-80
80ns
30ns
130ns
330mW
200fJA
-10
100ns
40ns
160ns
275mW
• Auto refresh is supported by an internal refresh address
counter
• Self refresh is supported by an internal timer
• Inputs and outputs TIL compatible
• Refresh: 2048 refresh cycles/32ms
• Package
- TC518512PL: DIP32-P-600
- TC518512FL: SOP32-P-525
- TC518512FTL: TSOP32-P-400
- TC518512TRL: TSOP32-P-400A
Pin Names
AO - A18
RIW
O'E'iliFSH
CE
1/01 - 1/08
Voo
GND
Address Inputs
ReadlWrite Control Input
Output Enable Input
Refresh Input
Chip Enable Input
Data Inputs/Outputs
Power
Ground
AI8
AI6
A14
Al2
A7
A6
AS
A4
A3
A2
Al
AO
1/01
1/02
1/03
GND
Voo
AIS
Al7
R/W
Al3
A8
A9
All
mimH
AaIO
1/08
V07
1/06
1/05
1/04
Al8
A16
Al4
Al2
A,7
A6
AS
A4
A3
A2
Al
AO
1/01
1/02
1/03
GNO
TOSHIBA AMERICA ELECTRONIC CDMPDNENTS, INC.
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TC518512FTL-80 Даташит, Описание, Даташиты
TC518512PL/FL/FTLlTRL-70/80/10
Block Diagram
Voo
Static RAM
MEMORY
ARRAY
2048 x 256 x8
cc
o
"
o
"
RNV O---<l~
Operating Mode
"":":""
;~NMODE
Read
Write
IT only Refresh
_.",
Auto/Self Refresh
Standby
CE
L
L
L
H
H
OEI
RFSH
L
*
H
L
H
R/W AD -A18 1/01 - 8
H V* OUT
L V* IN
H V* HZ
* * HZ
* * HZ
H = High level input (VIH)
I Low level input (VIU
VII~ orV1L
V' ,At the falling edge of CE, all address inputs are latched. At all other times, the address inputs are "*".
HZ -" High impedance
Maximum Ratings
SYMBOL
ITEM
VIN Input Voltage
VOUT Output Voltage
Voo Power Supply Voltage
TOPR Operating Temperature
TSTRG Storage Temperature
I-
TSOLOER Soldering Temperature· Time
P-- ... D
lOUT
Power Dissipation
Short Circuit Output Current
RATING
-1.0 -7.0
-1.0-7.0
-1.0-7.0
0-70
-55 - 150
260·10
600
50
UNIT
V
V
V
°C
°C
°C· sec
mW
rnA
NOTES
1
0-160
TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC.









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TC518512FTL-80 Даташит, Описание, Даташиты
Static RAM
TC518512PL.lFLlFTLITRL-70/80/10
DC Recommended Operating Conditions
SYMBOL
PARAMETER
VDO Power Supply Voltage
VIH Input High Voltage
VIL Input Low Voltage
MIN. TYP. MAX. UNIT NOTES
4.5 5.0
5.5
V
2.4 - VDD + 1.0 V
-1.0 - O.B V
2
DC Characteristics (Ta = 0 - 70°C, Voo = 5V±10%)
SYMBOL
PARAMETER
1000
IODS1
IODS2
IODF1
IODF2
IODF3
IODF4
II(L)
IO(L)
VOH
VOL
Operating Current (Average)
cr, Address cycling: tRC = tRC min.
70ns version
BOns version
1OOns version
Standby Current
cr = VIH , OE/R1~'SR = VIH
Standby Current
cr = Voo - 0.2V, OEil1FSR = VDO - 0.2V
Self Refresh Current (Average)
cr = VIH, OE/'I1F'SR = VIL
Self Refresh Current (Average)
cr = Voo - 0.2V, 'OE/RF'SR = 0.2V
Auto Refresh Current (Average)
O'E/iiJ='SR cycling: tFC = tFC min.
70ns version
BOns version
1OOns version
cronly Refresh Current (Average)
cr, Address cycling: tRC = tRC min.
70ns version
BOns version
1OOns version
Input Leakage Current
OV ::; VIN ::; VDO, All other Inputs not under test = OV
Output Leakage Current
Output Disabled (cr = VIH or OE/'I1F'SR = VIH or RIW = Vld
OV::; VOUT ::; Voo
Output High Level
10H = -1.0mA
Output Low Level
10L= 2.1mA
MIN. TYP. MAX. UNIT NOTES
- 50 70
- 45 60 mA 3,4
- 35 50
- - 1 mA
- - 200 ~
- - 1 mA
- - 200 ~
- - 70
- - 60 mA 3
- - 50
- - 70
- - 60 mA 3
- - 50
- - ±10 ~
- - ±10 ~
2.4 - - V
- - 0.4 V
Capacitance* (Voo = 5V, Ta = 25°C, f = 1MHz)
SYMBOL
PARAMETER
CI1 Input Capacitance (AO - A1B)
CI2 Input Capacitance (cr, OE';'I1F'SR, R/W)
CIO Input/Output Capacitance
MIN.
-
-
-
-This parameter is periodically sampled and is not 100% tested.
MAX.
5
7
7
UNIT
pF
TDSHIBA AMERICA ELECTRONIC COMPONENTS, INC.
D-161










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