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TC51V8512AFT-15 PDF даташит

Спецификация TC51V8512AFT-15 изготовлена ​​​​«Toshiba» и имеет функцию, называемую «SILICON GATE CMOS PSEUDO STATIC RAM».

Детали детали

Номер произв TC51V8512AFT-15
Описание SILICON GATE CMOS PSEUDO STATIC RAM
Производители Toshiba
логотип Toshiba логотип 

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TC51V8512AFT-15 Даташит, Описание, Даташиты
rOSHIBA
SILICON GATE CMOS
TC51V8512AF/ AFT/ A1R-12/15
PRELIMINARY
524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM
Description
The TC51V8512AF is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 words by 8 bits. The TC51V8512AF
utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high s~ed and low power
storage. The TC51 V8512AF operates from a single 3.0V power supply. Refreshing is supported by a refresh (OEIRFSH) input which
enables two types of refreshing - auto refresh and self refresh. The TC51V8512AF features a static RAM-like interface with a write
cycle in which the input data is written into the memory cell at the rising edge of RIW thus simplifying the microprocessor interface.
The TC51V8512AF is available in a 32-pin small outline plastic flat package, and a thin small outline package (forward type,
reverse type).
Features
• Organization: 524,288 words x 8 bits
• Low voltage function: 3.0V±10%
• Data retention supply voltage: 2.0V - 3.3V
• Fast access time
TC51V8512AF Family
tCEA CE Access Time
tOEA OE Access Time
tRC Cycle Time
Power Dissipation
Self Refresh Current
1 3.0V
-12 -15
120ns
150ns
60ns
80ns
190ns
230ns
99mW
66mW
40llA
• Auto refresh is supported by an internal refresh address
counter
• Self refresh is supported by an internal timer
• Inputs and outputs TIL compatible
• Refresh: 2048 refresh cycles/32ms
• Package
- TC51V8512AF: SOP32-P-525
- TC51V8512AFT: TSOP32-P-400
- TC518V512ATR: TSOP32-P-400A
AIS
Al6
A14
Al2
A7
A6
AS
A4
A3
A2
Al
AO
1/01
1/02
1/03
GND
Vao
AI5
AI7
Rf'N
Al3
AS
A9
All
()tJmH
AtO
ct
1108
1/07
1106
1/05
1/04
AIS
Al6
AI4
Al2
A7
A6
AS
A4
A3
A2
Al
AO
1/01
1102
1103
GND
Pin Names
AO - A18
RIW
OE/RFSH
CE
1101 - 1/08
Voo
GND
Address Inputs
Read/Write Control Input
Output Enable Input
Refresh Input
Chip Enable Input
Data InputslOutputs
Power
Ground
TDSHIBA AMERICA ELECTRONIC COMPONENTS, INC.
D~205









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TC51V8512AFT-15 Даташит, Описание, Даташиты
TC51 V8512AFIAFTIATR-12/15
Static RAM
Block Diagram
voo GND
8 COLUMN
DECODER
MEMORY
ARRAY
2048 x 256 x8
,cc
0
0
"-
R/Wo---<r
Operating Mode
MODE
Read
Write
cr only Refresh
Auto/Self Refresh
Standby
CE
DEI
RFSH
R/W AD NA18 1/01- 8
.L L H
V' OUT
L L V' IN
L H H V' HZ
.. ..H L
HZ
HH
HZ
H = High level input (VIH)
L =Low level input (VIU
• = VIH orVIL
= At the falling edge of CE, all address inputs are latched. At all other times, the address inputs are "'''.
HZ =High impedance
Maximum Ratings
SYMBOL
ITEM
VIN Input Voltage
VOUT Output Voltage
Voo Power Supply Voltage
TOPR Operating Temperature
TSTRG Storage Temperature
TSOLDER Soldering Temperature· Time
Po Power Dissipation
lOUT Short Circuit Output Current
RATING
-1.0 -7.0
-1.0 -7.0
-1.0 -7.0
0-70
-55 - 150
260·10
600
50
UNIT NOTES
V
V
V
°C
°C
°C· sec
mW
rnA
1
0-206
TOSHIBA AMERICA ELECTRONIC COMPONENTS. INC.
PRELIMINARY









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TC51V8512AFT-15 Даташит, Описание, Даташиты
Static RAM
TC51 V8512AF/AFT/ATR·12/15
DC Recommended Operating Conditions
SYMBOL
PARAMETER
Voo Power Supply Voltage
V1H Input High Voltage
Vil Input Low Voltage
MIN. TYP. MAX. UNIT NOTES
2.7 3.0
3.3
V
2.1 - Voo + 0.5 V
-0.5 - 0.7 V
2
DC Characteristics (Ta = 0 - 700C, Voo = 3V±10%)
SYMBOL
PARAMETER
1000
100S1
100S2
100F1
100F2
100F3
IOOF4
II(l)
10(l)
VOH
VOL
Operating Current (Average)
eE, Address cycling: tRC = tRC min.
120ns version
150ns version
Standby Current
eE = VIH, QE/RFSH = VIH
Standby Current
eE = Voo - 0.2V, QE/RFSH = Voo - 0.2V
Self Refresh Current (Average)
eE = VIH, QE/RFSH = Vil
Self Refresh Current (Average)
eE = Voo - 0.2V, QE/RFSR = 0.2V
Auto Refresh Current (Average)
OE/RFSH cycling: tFC = tFC min.
120ns version
150ns version
eE only Refresh Current (Average)
eE, Address cycling: tRC = tRC min.
120ns version
150ns version
Input Leakage Current
OV:5,; VIN :5,; Voo, All other Inputs not under test = OV
Output Leakage Current
Output Disabled (eE = VIH or OE/RFSH = VIH or RIW = VILl,
OV:5,; Vour :5,; Voo
Output High Level
10H = -100~
Output Low Level
10l= 100~
MIN. TYP. MAX. UNIT NOTES
- 20 30
-
mA 3,4
15 20
- - 0.5 mA
- - 40 ~
- - 0.5 mA
- - 40 ~
- 20 30
-
mA 3
15 20
- 20 30
-
mA 3
15 20
- - ±10 ~
- - ±10 ~
Voo - 0.2 - - V
- - 0.2 V
Capacitance* (Voo = 3V, Ta = 25°C, f = 1MHz)
SYMBOL
PARAMETER
MIN.
CI1 Input Capacitance (AD - A18)
CI2 Input Capacitance (eE, QE/RFSH, RIW)
CIO Input/Output Capacitance
-
-
-
*This parameter is periodically sampled and is not 100% tested.
MAX.
5
7
7
UNIT
pF
PRELIMINARY
TOSHIBA AMERICA ELECTRONIC COMPONENTS. INC.
D·207










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