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TC518512PI-10 PDF даташит

Спецификация TC518512PI-10 изготовлена ​​​​«Toshiba» и имеет функцию, называемую «SILICON GATE CMOS PSEUDO STATIC RAM».

Детали детали

Номер произв TC518512PI-10
Описание SILICON GATE CMOS PSEUDO STATIC RAM
Производители Toshiba
логотип Toshiba логотип 

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TC518512PI-10 Даташит, Описание, Даташиты
TOSHIBA
SILICON GATE CMOS
524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM
11:518512PI/F1~/10
Description
The TC518512PI is a 4M bit high speed CMOS pseudo static RAMorganized as 524,288 words by 8 bits. The TC518512PI utilizes
a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacityJ:!!,9h speed and low power storage. The
TC518512PI operates from a single 5V power supply. Refreshing is supported by a refresh (OEIRFSH) input which enables two
types of refreshing - auto refresh and self refresh. The TC518512PI features a static RAM-like interface with a write cycle in which
the input data is written into the memory cell at the rising edge of RIW thus simplifying the microprocessor interface. The
TC518512PI is guaranteed over an operating temperature range of -40 - 85°C.
The TC518512PI is available in a 32-pin, 0.6 inch width plastic DIP and a small outline plastic flat package.
Features
• Organization: 524,288 words x 8 bits
• Single 5V power supply
• Fast access time
TC518512PI Family
crtCEA Access Time
toEA ~ Access Time
tRC Cycle Time
Power Dissipation
Self Refresh Current
-80 -10
80ns
100ns
30ns
40ns
130ns
160ns
330mW 275mW
300~
• Auto refresh is supported by an internal refresh address
counter
• Self refresh is supported by an internal timer
• Wide operating temperature: -40 - 85°C
• Inputs and outputs TTL compatible
• Refresh: 2048 refresh cycles/32ms
• Package
- TC518512PI: DIP32-P-600
- TC518512FI: SOP32-P-525
Pin Names
AO - A18
R/W
OORFSR
cr
1/01 - 1/08
Voo
GND
Address Inputs
ReadIWrite Control Input
Output Enable Input
Refresh Input
Chip Enable Input
Data Inputs/Outputs
Power
Ground
Pin Connection (Top View)
I'll FI
AlS 32 Voo
A ~6 31 A15
A14 30 At7
A12 29 RJW
A7 28 At3
A6 27 A8
AS 26 A9
A4 25 All
A3 24 ~mH
A2 23 AtO
At 22 tt
AO 21 1108
1/01 20 1107
V02 19 V06
V03 18 1105
GND 17 1104
TOSHIBA AMERICA ELECTRONIC COMPONENTS. INC.
0-197









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TC518512PI-10 Даташит, Описание, Даташиты
RJW o----a
Operating Mode
MODE
Read
Write
cr only Refresh
Auto/Self Refresh
Standby
CE
OEI
RFSH
R/W AO -A18 1/01 - 8
LLH
L* L
LH H
HL
*
HH
*
V* OUT
V* IN
V* HZ
* HZ
* HZ
H = High level input (VIH)
L = Low level input (VIU
=* V1H orV1L
=V* At the falling edge of CE, all address inputs are latched. At all other times, the address inputs are "*n.
HZ = High impedance
Maximum Ratings
SYMBOL
ITEM
VIN Input Voltage
VOUT Output Voltage
Voo Power Supply Voltage
TOPR Operating Temperature
TSTRG Storage Temperature
TSOLOER Soldering Temperature • Time
Po Power Dissipation
lOUT Short Circuit Output Current
RATING
-1.0 - 7.0
-1.0 -7.0
-1.0 -7.0
-40 - 85
-55 - 150
260· 10
600
50
UNIT
V
V
V
°C
°C
°C· sec
mW
rnA
NOTES
1
D·198
TOSHIBA AMERICA ELECTRONIC CDMPONENTS. INC.









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TC518512PI-10 Даташит, Описание, Даташиты
Static RAM
TC518512PI/FI·80/10
DC Recommended Operating Conditions
SYMBOL
PARAMETER
Voo Power Supply Voltage
VIH Input High Voltage
VIL Input Low Voltage
MIN. TYP. MAX. UNIT NOTES
4.5 5.0
5.5
V
2.4 - Voo + 1.0 V
-1.0 - 0.8 V
2
= =DC Characteristics (Ta -40 - 85°C, Voo 5V±10%)
SYMBOL
PARAMETER
1000
100S1
100S2
100F1
100F2
100F3
100F4
II(L)
10(L)
VOH
VOL
Operating Current (Average)
cr, Address cycling: tRC = tRC min,
80ns version
1OOns version
Standby Current
cr = VIH, UE!l1FS'R = VIH
Standby Current
cr = Voo - 0.2V, OO'RFSR = Voo - 0.2V
Self Refresh Current (Average)
cr = VIH, UE!l1FS'R = VIL
Self Refresh Current (Average)
cr = Voo - 0.2V, OO'RFSR = 0.2V
Auto Refresh Current (Average)
OE/'RFSR cycling: tFC = tFC min.
80ns version
1OOns version
cr only Refresh Current (Average)
cr, Address cycling: tRC = tRC min.
80ns version
1OOns version
Input Leakage Current
OV ~ VIN ~ Voo, All other Inputs not under test = OV
Output Leakage Current
Output Disabled (cr = VIH or OO'RFSR = VIH or R/W = Vld
OV~VOUT~VOO
Output High Level
10H = -1.0mA
Output Low Level
10L= 2.1mA
MIN. TYP.
- 45
- 35
--
--
--
--
--
--
--
--
--
--
2.4 -
--
MAX.
60
50
1
200
1
300
60
50
60
50
±10
±10
-
0.4
UNIT NOTES
rnA 3,4
rnA
~
rnA
~
rnA 3
rnA 3
~
~
V
V
Capacitance* (Voo = 5V, Ta = 25°C, f = 1MHz)
SYMBOL
PARAMETER
CI1 Input Capacitance (AO - A18)
CI2 Input Capacitance (cr, OO'RFSR, R/W)
CIO Input/Output Capacitance
MIN.
-
-
-
*This parameter is periodically sampled and is not 100% tested.
MAX.
5
7
7
UNIT
pF
TOSHIBA AMERICA ELECTRONIC COMPONENTS. INC.
D·199










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Номер в каталогеОписаниеПроизводители
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