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F2910 PDF даташит

Спецификация F2910 изготовлена ​​​​«Integrated Device Technology» и имеет функцию, называемую «Constant Impedance SPST RF Switch».

Детали детали

Номер произв F2910
Описание Constant Impedance SPST RF Switch
Производители Integrated Device Technology
логотип Integrated Device Technology логотип 

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F2910 Даташит, Описание, Даташиты
Constant Impedance K|Z| SPST RF
Switch 30 MHz to 8000 MHz
F2910
Datasheet
Description
The F2910 is a high reliability, low insertion loss, 50 Ω absorptive
SPST RF switch designed for a multitude of wireless and RF
applications. This device covers a broad frequency range from
30 MHz to 8000 MHz. In addition to providing low insertion loss,
the F2910 also delivers excellent linearity and isolation
performance while providing a 50 Ω termination on RF2 in the
isolation mode. The F2910 includes a patent pending constant
impedance K|Z| feature for the RF2 port. K|Z| maintains near
constant impedance when switching RF ports and improves hot
switching ruggedness. K|Z| minimizes VSWR transients and
reduces phase and amplitude variations when switching.
The F2910 uses a single positive supply voltage supporting either
3.3 V or 1.8 V control logic.
Competitive Advantage
The F2910 provides constant impedance for one RF port during
transitions, improving a system’s hot-switching ruggedness. The
device also supports high power handling and high isolation.
Constant impedance K|Z| during switching transition
Low insertion loss
High isolation
Excellent linearity
Extended temperature range: -55 °C to +105 °C
Typical Applications
Base Station 2G, 3G, 4G
Portable Wireless
Repeaters and E911 systems
Digital Pre-Distortion
Public Safety Infrastructure
WIMAX Receivers and Transmitters
Military Systems, JTRS radios
RFID handheld and portable readers
Cable Infrastructure
Wireless LAN
Test / ATE Equipment
Features
Insertion Loss
0.58 dB at 2 GHz
High Isolation
51 dB at 2 GHz
High Linearity
IIP3 of 65 dBm
Wide Single Positive Supply Voltage Range
3.3 V and 1.8 V compatible control logic
Operating temperature -55 °C to +105 °C
2 mm x 2 mm 8-pin DFN package
Block Diagram
Figure 1. Block Diagram
© 2016 Integrated Device Technology, Inc
1
August 30, 2016









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F2910 Даташит, Описание, Даташиты
Pin Assignments
Figure 2. Pin Assignments for 2 mm x 2 mm x 0.9 mm 8-VFQFP-N – Top View
RF2 V1
87
EP
VDD RF1
65
F2910
F2910 Datasheet
12 34
NC GND GND NC
Pin Descriptions
Table 1. Pin Descriptions
Number
1, 4
2, 3
5
6
7
8
Name
NC
GND
RF1
VDD
V1
RF2
EP
Description
This pin may be connected to the paddle and can be grounded.
Ground. Also, internally connected to the ground paddle. Ground this pin as close to the device as
possible.
RF1 Port. Matched to 50 in the insertion loss state only. If this pin is not 0 V DC, then an external
coupling capacitor must be used.
Power Supply. Bypass to GND with capacitors shown in the Typical Application Circuit as close as
possible to pin.
Logic control pin. See Table 6 for proper logic setting.
RF2 Port. Matched to 50 E. If this pin is not 0V DC, then an external coupling capacitor must be used.
Exposed Pad. Internally connected to GND. Solder this exposed pad to a PCB pad that uses multiple
ground vias to provide heat transfer out of the device and into the PCB ground planes. These multiple
ground vias are also required to achieve the specified RF performance.
© 2016 Integrated Device Technology, Inc
2
August 30, 2016









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F2910 Даташит, Описание, Даташиты
F2910 Datasheet
Absolute Maximum Ratings
Stresses beyond those listed below may cause permanent damage to the device. Functional operation of the device at these or any other
conditions beyond those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
Table 2. Absolute Maximum Ratings
VDD to GND
Parameter
Symbol
VDD
Minimum
-0.3
V1 to GND
VLogic
-0.3
RF1, RF2 to GND
VRF
RF Input Power Port 1 or 2 Other port terminated into 50 Ω [a]
PRF12
RF Input Power Port 1 in isolation Port 2 terminated into 50 Ω [a]
PRF1_ISO
RF Input Power Port 2 in isolation Port 1 terminated into 50 Ω [a]
PRF2_ISO
Maximum Junction Temperature
Tjmax
Storage Temperature Range
TST
Lead Temperature (soldering, 10s)
TLEAD
ElectroStatic Discharge – HBM
(JEDEC/ESDA JS-001-2012)
VESDHBM
ElectroStatic Discharge – CDM
(JEDEC 22-C101F)
VESDCDM
≤ ≤a. VDD = 2.7 V to 5.5 V, 30 MHz FRF 8000 MHz, Tc = 105°C, ZS = ZL = 50 ohms.
-0.3
-65
Maximum
+6.0
Lower of
(VDD + 0.3V, 3.6V)
+0.3
33
23
30
+140
+150
+260
2000
(Class 2)
1000
(Class C3)
Units
V
V
V
dBm
°C
°C
°C
V
V
© 2016 Integrated Device Technology, Inc
3
August 30, 2016










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Номер в каталогеОписаниеПроизводители
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