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7NM80 PDF даташит

Спецификация 7NM80 изготовлена ​​​​«Unisonic Technologies» и имеет функцию, называемую «N-CHANNEL POWER MOSFET».

Детали детали

Номер произв 7NM80
Описание N-CHANNEL POWER MOSFET
Производители Unisonic Technologies
логотип Unisonic Technologies логотип 

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7NM80 Даташит, Описание, Даташиты
UNISONIC TECHNOLOGIES CO., LTD
7NM80
Preliminary
7.0A, 800V N-CHANNEL
SUPER-JUNCTION MOSFET
DESCRIPTION
The UTC 7NM80 is a Super Junction MOSFET Structure and is
designed to have better characteristics, such as fast switching time,
low gate charge, low on-state resistance and a high rugged
avalanche characteristics. This power MOSFET is usually used at
DC-DC, AC-DC converters for power applications.
FEATURES
* RDS(ON) < 0.94@ VGS = 10V, ID = 3.5A
* Fast switching capability
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
7NM80L-TA3-T
7NM80G-TA3-T
TO-220
7NM80L-TF1-T
7NM80G-TF1-T
TO-220F1
7NM80L-TN3-T
7NM80G-TN3-T
TO-252
Note: Pin Assignment: G: Gate D: Drain S: Source
Pin Assignment
123
GDS
GDS
GDS
Packing
Tube
Tube
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2016 Unisonic Technologies Co., Ltd
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7NM80 Даташит, Описание, Даташиты
7NM80
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC =25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
800
V
Gate-Source Voltage
Drain Current
Avalanche Energy
Continuous
Pulsed (Note 2)
Single Pulsed (Note 3)
VGSS
ID
IDM
EAS
±30
7.0
28
420
V
A
A
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt 6.2 V/ns
TO-220
142 W
Power Dissipation
TO-220F1
PD
52
W
TO-252
83 W
Junction Temperature
Storage Temperature Range
TJ
TSTG
+150
-55 ~ +150
°C
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L=159mH, IAS=2.3A, VDD=50V, RG=25, Starting TJ = 25°C.
4. ISD 7.0A, di/dt 200A/μs, VDD V(BR)DSS, TJ = 25°C.
THERMAL DATA
PARAMETER
Junction to Ambient
TO-220
TO-252
TO-220
Junction to Case
TO-220F1
TO-252
SYMBOL
θJA
θJC
RATING
62.5
110
0.88
2.4
1.5
UNIT
°C/W
°C/W
°C/W
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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7NM80 Даташит, Описание, Даташиты
7NM80
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-Source On-State Resistance
BVDSS
IDSS
IGSS
VGS=0V, ID=250µA
VDS=800V, VGS=0V
VDS=0V ,VGS=±30V
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250μA
VGS = 10V, ID = 3.5A
800
2.5
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VGS=0V, VDS=25V, f=1.0MHz
SWITCHING PARAMETERS
Total Gate Charge (Note 1)
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time (Note 1)
Rise Time
Turn-OFF Delay Time
Fall-Time
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
VDS=50V, VGS=10V, ID=1.3A ,
IG=100µA (Note 1, 2)
VDD=30V, VGS=10V, ID=0.5A,
RG=25(Note 1, 2)
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage (Note 1)
VSD IS =3.5A, VGS=0V
Body Diode Reverse Recovery Time (Note 1)
Body Diode Reverse Recovery Charge
trr IS =7.0A, VGS=0V,
Qrr dIF/dt=100A/μs
Notes: 1. Pulse Test : Pulse width 300μs, Duty cycle 2%.
2. Essentially independent of operating temperature.
TYP MAX UNIT
10
±100
V
µA
nA
4.5 V
0.94
620 pF
244 pF
18 pF
46 nC
5 nC
16 nC
56 ns
120 ns
272 ns
68 ns
7.0 A
28 A
1.4 V
450 ns
6 μC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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Номер в каталогеОписаниеПроизводители
7NM80N-CHANNEL POWER MOSFETUnisonic Technologies
Unisonic Technologies

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