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11NM70 PDF даташит

Спецификация 11NM70 изготовлена ​​​​«Unisonic Technologies» и имеет функцию, называемую «N-CHANNEL POWER MOSFET».

Детали детали

Номер произв 11NM70
Описание N-CHANNEL POWER MOSFET
Производители Unisonic Technologies
логотип Unisonic Technologies логотип 

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11NM70 Даташит, Описание, Даташиты
UNISONIC TECHNOLOGIES CO., LTD
11NM70
11A, 700V N-CHANNEL
SUPER-JUNCTION MOSFET
DESCRIPTION
The UTC 11NM70 is a Super Junction MOSFET Structure
and is designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and a
high rugged avalanche characteristics. This power MOSFET is
usually used at DC-DC, AC-DC converters for power
applications.
FEATURES
* RDS(ON) < 0.58@ VGS=10V, ID=5.5A
* By using Super Junction Structure
* Fast Switching
* With 100% Avalanche Tested
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
11NM70L-TA3-T
11NM70G-TA3-T
11NM70L-TF3-T
11NM70G-TF3-T
11NM70L-TF1-T
11NM70G-TF1-T
11NM70L-TM3-T
11NM70G-TM3-T
11NM70L-TMS2-T
11NM70G-TMS2-T
11NM70L-TN3-R
11NM70G-TN3-R
11NM70L-T2Q-T
11NM70G-T2Q-T
11NM70L-T2S-T
11NM70G-T2S-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
TO-220F
TO-220F1
TO-251
TO-251S2
TO-252
TO-262
TO-262S
Pin Assignment
123
GD S
GD S
GD S
GD S
GD S
GD S
GD S
GD S
Packing
Tube
Tube
Tube
Tube
Tube
Tape Reel
Tube
Tube
www.unisonic.com.tw
Copyright © 2016 Unisonic Technologies Co., Ltd
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QW-R209-041.F









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11NM70 Даташит, Описание, Даташиты
11NM70
MARKING
Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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11NM70 Даташит, Описание, Даташиты
11NM70
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain to Source Voltage
VDSS
700
V
Gate to Source Voltage
Continuous Drain Current
Continuous
VGSS
ID
±30
11
V
A
Pulsed Drain Current
Pulsed (Note 2)
IDM
44
A
Avalanche Current
IAR 2.9 A
Avalanche Energy
Single Pulsed (Note 3)
Peak Diode Recovery dv/dt (Note 4)
EAS
dv/dt
273 mJ
4.5 V/ns
TO-220/TO-262
TO-262S
162 W
Power Dissipation
TO-220F/TO-220F1
PD
24 W
TO-251/TO-251S2
TO-252
80 W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature.
3. L=65mH, IAS=2.9A, VDD= 50V, RG=25, Starting TJ=25°C.
4. ISD 11A, di/dt 200A/μs, VDD BVDSS, Starting TJ=25°C.
THERMAL DATA
PARAMETER
Junction to Ambient
TO-220F/TO-220F1
TO-220/TO-262
Junction to Case
TO-262S
TO-251/TO-252
TO-251S2
SYMBOL
θJA
θJC
RATINGS
62.5
5.2
0.77
1.56
UNIT
°C/W
°C/W
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 7
QW-R209-041.F










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Номер в каталогеОписаниеПроизводители
11NM70N-CHANNEL POWER MOSFETUnisonic Technologies
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