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Número de pieza | P3606HK | |
Descripción | Dual N-Channel Enhancement Mode MOSFET | |
Fabricantes | UNIKC | |
Logotipo | ||
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Dual N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 38mΩ @VGS = 10V
ID
15A
PDFN 5*6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 60
Gate-Source Voltage
VGS ±20
Continuous Drain Current3
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
15
ID 10
IDM 40
Continuous Drain Current
TA = 25 °C
TA = 70 °C
5
ID 4
Avalanche Current
IAS 18.6
Avalanche Energy
L = 0.1mH
EAS 17.3
Power Dissipation
TC = 25 °C
TC = 100 °C
20.8
PD 8
Power Dissipation
TA = 25 °C
TA = 70 °C
2.3
PD 1.5
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Case
RqJC
6
Junction-to-Ambient2
RqJA
55
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
UNITS
°C / W
REV 1.1
1 2015/12/10
1 page P3606HK
Dual N-Channel Enhancement Mode MOSFET
*散热片形状会因为封装厂框架不同而有所差异。
REV 1.1
5
2015/12/10
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet P3606HK.PDF ] |
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