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Номер произв P3606HK
Описание Dual N-Channel Enhancement Mode MOSFET
Производители UNIKC
логотип UNIKC логотип 



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P3606HK Даташит, Описание, Даташиты
P3606HK
Dual N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 38mΩ @VGS = 10V
ID
15A
PDFN 5*6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 60
Gate-Source Voltage
VGS ±20
Continuous Drain Current3
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
15
ID 10
IDM 40
Continuous Drain Current
TA = 25 °C
TA = 70 °C
5
ID 4
Avalanche Current
IAS 18.6
Avalanche Energy
L = 0.1mH
EAS 17.3
Power Dissipation
TC = 25 °C
TC = 100 °C
20.8
PD 8
Power Dissipation
TA = 25 °C
TA = 70 °C
2.3
PD 1.5
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Case
RqJC
6
Junction-to-Ambient2
RqJA
55
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
UNITS
°C / W
REV 1.1
1 2015/12/10









No Preview Available !

P3606HK Даташит, Описание, Даташиты
P3606HK
Dual N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
60
V
1.3 1.8 2.3
±100 nA
Zero Gate Voltage Drain Current
IDSS
VDS = 48V, VGS = 0V ,
VDS = 40V, VGS = 0V , TJ = 55 °C
1
mA
10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 4.5V, ID = 5A
VGS = 10V, ID = 5A
VDS = 5V, ID = 5A
36 47
33 38
29 S
DYNAMIC
Input Capacitance
Ciss
541
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
75 pF
Reverse Transfer Capacitance
Gate Resistance
Crss
Rg VGS = 0V, VDS = 0V, f = 1MHz
45
1.3 Ω
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg
VGS=10V
VGS=4.5V
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 30V, ID = 5A
VDS = 30V,ID @ 5A,
VGS=10V, RGEN= 6Ω
13.3
7.7
nC
1.7
4.6
16
10
nS
34
10
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = 5A, VGS = 0V
15 A
1.3 V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 5A, dlF/dt = 100A /mS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
14.6 nS
5 nC
2Independent of operating temperature.
REV 1.1
2 2015/12/10









No Preview Available !

P3606HK Даташит, Описание, Даташиты
P3606HK
Dual N-Channel Enhancement Mode MOSFET
REV 1.1
3 2015/12/10










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