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P6015AT PDF даташит

Спецификация P6015AT изготовлена ​​​​«UNIKC» и имеет функцию, называемую «N-Channel Enhancement Mode MOSFET».

Детали детали

Номер произв P6015AT
Описание N-Channel Enhancement Mode MOSFET
Производители UNIKC
логотип UNIKC логотип 

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P6015AT Даташит, Описание, Даташиты
P6015AT
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
150V
60mΩ @VGS = 10V
ID
26A
TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
26
16
80
Avalanche Current
IAS 21
Avalanche Energy
L = 0.1mH
EAS
22
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
104
41
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
TYPICAL
MAXIMUM UNITS
1.2 °C / W
REV 1.0
1 2014/11/18









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P6015AT Даташит, Описание, Даташиты
P6015AT
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
150
234
±100
Zero Gate Voltage Drain Current
On-State Drain Current1
IDSS
ID(ON)
VDS = 120V, VGS = 0V
VDS = 100V, VGS = 0V , TJ = 125 °C
VDS = 10V, VGS = 10V
80
1
10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 7V, ID = 5A
VGS = 10V, ID = 10A
VDS = 10V, ID = 10A
56 80
40 60
10
DYNAMIC
Input Capacitance
Ciss
2850
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
200
Reverse Transfer Capacitance
Crss
135
Gate Resistance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 0V, f = 1MHz
VDS = 75V, VGS = 10V,
ID = 10A
VDD = 75V,
ID @ 10A, VGS = 10V, RGS = 6Ω
2.8
56
17
24
18
40
74
40
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = 10A, VGS = 0V
26
1.3
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 10A, dlF/dt = 100A / mS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
76
207
2Independent of operating temperature.
UNITS
V
nA
mA
A
S
pF
Ω
nC
nS
A
V
nS
nC
REV 1.0
2 2014/11/18









No Preview Available !

P6015AT Даташит, Описание, Даташиты
P6015AT
N-Channel Enhancement Mode MOSFET
REV 1.0
3 2014/11/18










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