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P1610AT PDF даташит

Спецификация P1610AT изготовлена ​​​​«NIKO-SEM» и имеет функцию, называемую «N-Channel Field Effect Transistor».

Детали детали

Номер произв P1610AT
Описание N-Channel Field Effect Transistor
Производители NIKO-SEM
логотип NIKO-SEM логотип 

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P1610AT Даташит, Описание, Даташиты
NIKO-SEM
N-Channel Logic Level Enhancement
Mode Field Effect Transistor
P1610AT
TO-220
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
110V
16mΩ
ID
51A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate-Source Voltage
Continuous Drain Current2
Pulsed Drain Current1,2
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
L = 1mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
1.GATE
2.DRAIN
3.SOURCE
LIMITS
±20
51
32
150
12
72
96
38
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RJC
Junction-to-Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed.
TYPICAL
MAXIMUM
1.3
62.5
UNITS
°C / W
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
STATIC
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
VDS = 0V, VGS = ±20V
VDS = 88V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 125 °C
LIMITS
UNIT
MIN TYP MAX
110
2 3.2
4
V
±100 nA
1
A
10
REV 1.0
E-28-2
1









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P1610AT Даташит, Описание, Даташиты
NIKO-SEM
N-Channel Logic Level Enhancement
Mode Field Effect Transistor
P1610AT
TO-220
Halogen-Free & Lead-Free
Drain-Source On-State Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 7V, ID = 15A
VGS = 10V, ID = 20A
VDS = 10V, ID = 20A
DYNAMIC
14 21
13 16
80
Input Capacitance
Ciss
3009
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
258
Reverse Transfer Capacitance
Crss
152
Gate Resistance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 0V ,f = 1MHz
VDS = 55V, VGS = 10V,
ID = 20A
VDD = 55V
ID 20A, VGS = 10V, RGEN = 6Ω
0.81
57
15.8
20
47
88
86
83
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
Forward Voltage1
IS
VSD IF = 20A,VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
IF = 20A, dlF/dt = 100A / S
Qrr
1Pulse test : Pulse Width 300 sec, Duty Cycle 2%.
2Independent of operating temperature.
37
50
51
1.2
mΩ
S
pF
Ω
nC
nS
A
V
nS
nC
REV 1.0
E-28-2
2









No Preview Available !

P1610AT Даташит, Описание, Даташиты
NIKO-SEM
N-Channel Logic Level Enhancement
Mode Field Effect Transistor
P1610AT
TO-220
Halogen-Free & Lead-Free
Output Characteristics
60
VGS=10V
VGS=9V
VGS=8V
48 VGS=7V
VGS=6V
Transfer Characteristics
60
48
36 36
VGS=5V
24 24
12
VGS=4.5V
0
0123456
VDS, Drain-To-Source Voltage(V)
7
On-Resistance VS Temperature
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8 VGS=10V
ID=20A
0.6
0.4
-50
-25 0 25 50 75 100 125 150
TJ , Junction Temperature(˚C)
25
12
125
-20
0
01234567
VGS, Gate-To-Source Voltage(V)
Capacitance Characteristic
3500
3000
2500
2000
1500
1000
500
0
0
CISS
COSS
CRSS
5 10 15 20 25 30
VDS, Drain-To-Source Voltage(V)
Gate charge Characteristics
10 Characteristics
VDS=55V
ID=20A
8
6
Source-Drain Diode Forward Voltage
100
10
4
150
25
1
2
0
0 10 20 30 40 50 60
Qg , Total Gate Charge(nC)
0.1
0.0 0.2 0.4 0.6 0.8 1.0
VSD, Source-To-Drain Voltage(V)
1.2
REV 1.0
E-28-2
3










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