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Datasheet P057AAT Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | P057AAT | N-Channel Field Effect Transistor NIKO-SEM
N-Channel Enhancement Mode
P057AAT
Field Effect Transistor
TO-220
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
75 5.8mΩ
ID 129A
D G
S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate-Source Voltage
Continuous | NIKO-SEM | transistor |
2 | P057AAT | N-Channel Enhancement Mode MOSFET P057AAT
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
75V 5.8mΩ @VGS = 10V
ID 129A
TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current1 Pulsed Drain Curr | UNIKC | mosfet |
P05 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | P0502CEA | N-Channel Enhancement Mode MOSFET P0502CEA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
20V 5mΩ @VGS = 4.5V
ID 70A
PDFN 3x3P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 20
Gate-Source Voltage
VGS ±8
TC = 25 °C
UNIKC mosfet | | |
2 | P0502CV | N-Channel Field Effect Transistor NIKO-SEM
N-Channel Enhancement Mode
P0502CV
Field Effect Transistor
SOP-8
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
20V 5mΩ
ID 18A
D G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwis e Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage Gate-Source NIKO-SEM transistor | | |
3 | P0508AT | N-Channel Field Effect Transistor NIKO-SEM
N-Channel Enhancement Mode
P0508AT
Field Effect Transistor
TO-220
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
80V 5.5mΩ
ID 94A
D G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Sour NIKO-SEM transistor | | |
4 | P0510AT | N-Channel Enhancement Mode MOSFET P0510AT
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
5.5mΩ @VGS = 10V
ID 132A
TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 100
Gate-Source Voltage
VGS ±25
Continuous UNIKC mosfet | | |
5 | P0510AT | N-Channel Field Effect Transistor NIKO-SEM
N-Channel Enhancement Mode
P0510AT
Field Effect Transistor
TO-220
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
5.5mΩ
ID 143A
D G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-S NIKO-SEM transistor | | |
6 | P0515WC04B | Fast Turn-off Thyristor Fast turn-off Thyristor P0515WC04# to P0515WC06#
The data sheet on the subsequent pages of this document is a scanned copy of existing data for this product.
(Rating Report 85TR6 Issue 1)
This data reflects the old part number for this product which is: P270CH02-05. This part number must NOT be us IXYS thyristor | | |
7 | P0515WC04C | Fast Turn-off Thyristor Fast turn-off Thyristor P0515WC04# to P0515WC06#
The data sheet on the subsequent pages of this document is a scanned copy of existing data for this product.
(Rating Report 85TR6 Issue 1)
This data reflects the old part number for this product which is: P270CH02-05. This part number must NOT be us IXYS thyristor | |
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Número de pieza | Descripción | Fabricantes | |
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