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PDF ME4812B Data sheet ( Hoja de datos )

Número de pieza ME4812B
Descripción N-Channel 30-V(D-S) MOSFET
Fabricantes Matsuki 
Logotipo Matsuki Logotipo



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No Preview Available ! ME4812B Hoja de datos, Descripción, Manual

ME4812B/ME4812B-G
N-Channel 30-V (D-S) MOSFET Integrated Schottky Diode
GENERAL DESCRIPTION
The ME4812B is the N-Channel logic enhancement mode power
field effect transistors are produced using high cell density, DMOS
trench technology. This high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited
for low voltage application such as cellular phone and notebook
computer power management and other battery powered circuits
where high-side switching , and low in-line power loss are needed in
a very small outline surface mount package.
FEATURES
RDS(ON)12m@VGS=10V
RDS(ON)21m@VGS=4.5V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
Power Management in Note book
Battery Powered System
DC/DC Converter
Load Switch
PIN CONFIGURATION
(SOP-8)
Top View
Ordering Information: ME4812B (Pb-free)
ME4812B-G (Green product- Halogen free)
Absolute Maximum Ratings (TA=25Unless Otherwise Noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
TA=25
Current( TJ =150)*
TA=70
Pulsed Drain Current
Maximum Power Dissipation*
TA=25
TA=70
Operating Junction Temperature
Thermal Resistance-Junction to Ambient*
VDSS
VGSS
ID
IDM
PD
TJ
RθJA
* The device mounted on 1in2 FR4 board with 2 oz copper
Limit
30
±20
11.4
9.1
46
2.5
1.6
-55 to 150
50
Unit
V
V
A
A
W
℃/W
JuDneec,, 22000190--VVeerr11..00
01

1 page




ME4812B pdf
ME4812B/ME4812B-G
N-Channel 30-V (D-S) MOSFET Integrated Schottky Diode
SOP-8 Package Outline
JuDneec,, 22000190--VVeerr11..00
Symbol
A
A1
B
C
D
E
e
H
L
θ
MILLIMETERS (mm)
MIN MAX
1.35 1.75
0.10 0.25
0.35 0.49
0.18 0.25
4.80 5.00
3.80 4.00
1.27 BSC
5.80 6.20
0.40 1.25
0° 7°
05

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