KTD1146 PDF даташит
Спецификация KTD1146 изготовлена «KEC» и имеет функцию, называемую «EPITAXIAL PLANAR NPN TRANSISTOR». |
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Детали детали
Номер произв | KTD1146 |
Описание | EPITAXIAL PLANAR NPN TRANSISTOR |
Производители | KEC |
логотип |
3 Pages
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SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT APPLICATION
CAMERA STROBO (For Electronic Flash Unit)
FEATURES
ᴌLow VCE(SAT).
ᴌHigh Performance at Low Supply Voltage.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector
Current
DC
Pulse (Note1)
Collector Power Dissipation
Junction Temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Storage Temperature Range
Tstg
Note 1: Pulse Width⏊100mS, Duty Cycle⏊30%
RATING
40
20
7
5
8
625
150
-55ᴕ150
UNIT
V
V
V
A
mW
ᴱ
ᴱ
KTD1146
EPITAXIAL PLANAR NPN TRANSISTOR
BC
K
E
G
D
H
FF
1 23
N DIM MILLIMETERS
A 4.70 MAX
B 4.80 MAX
C 3.70 MAX
D 0.45
E 1.00
F 1.27
G 0.85
H 0.45
J 14.00 +_0.50
K 0.55 MAX
L 2.30
M 0.45 MAX
N 1.00
1. EMITTER
2. COLLECTOR
3. BASE
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Base Breakdown Voltage
Collector Emitter Breakdown Voltage
Emitter Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1) (Note1)
hFE(2)
VCE(sat)
fT
Cob
IC=100ỌA, IE=0
IC=1mA, IB=0
IE=10ỌA, IC=0
VCB=20V, IE=0
VEB=7V, IC=0
VCE=2V, IC=0.5A
VCE=2V, IC=2A
IC=3A, IB=60mA(Pulse)
VCE=6V, IC=50mA
VCB=20V, f=1MHz, IE=0
Note1) : hFE(1) Classification O:120ᴕ240, Y:200ᴕ400, GR:350ᴕ700
MIN.
40
20
7
-
-
120
100
-
20
-
TYP.
-
-
-
-
-
-
-
-
100
-
MAX.
-
-
-
100
100
700
-
0.4
-
50
UNIT
V
V
V
nA
nA
V
MHz
pF
1999. 11. 30
Revision No : 2
1/3
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KTD1146
Pc - Ta
1.0
0.8
0.6
0.4
0.2
0
0 20 40 60 80 100 120 140 160
AMBIENT TEMPERATURE Ta ( C)
IC - VCE
3.4
3.2 Ta=25 C
7mA
2.8 6mA
2.4 5mA
2.0 4mA
1.6 3mA
1.2 2mA
0.8
0.4 IB=1mA
0
0 0.4 0.8 1.2 1.6 2.0 2.4 2.8
COLLECTOR-EMITTER VOLTAGE VCE (V)
8
7 VCE =10V
Ta=25 C
6
I C - VBE
5
4
3
2
1
0
0 0.2 0.4 0.6 0.8 1.0
BASE-EMITTER VOLTAGE VBE (V)
1.2
800
700
600
500
400
300
200
100
0
0.01
hFE - I C
VCE =2V
Ta=25 C
0.03 0.1 0.3
1
3
COLLECTOR CURRENT I C (A)
10
1999. 11. 30
Revision No : 2
I C - VCE(sat)
8
7 I C/IB =30
Ta=25 C
6
5
4
3
2
1
0
0 0.2 0.4 0.6 0.8 1.0 1.2
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE(sat) (V)
fT - IE
400
VCE =6V
Ta=25 C
300
200
100
0
0.01
0.03 0.1 0.3
1
3
EMITTER CURRENT IE (A)
10
2/3
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KTD1146
C ob - VCB
100
IE =0
f=1MHz
80 Ta=25 C
60
40
20
0
1
3 5 10
30 50 100
COLLECTOR BASE VOLTAGE V CB (V)
SAFE OPERATION AREA
100
30
10 I CP
SINGLE PULSE
Ta=25 C
3 IC
1
t=1s
0.3
0.1
0.03
0.01
0.1 0.3 1
3 10 30 100
COLLECTOR-EMITTER VOLTAGE VCE (V)
1999. 11. 30
Revision No : 2
3/3
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Номер в каталоге | Описание | Производители |
KTD1145 | EPITAXIAL PLANAR NPN TRANSISTOR | KEC |
KTD1146 | EPITAXIAL PLANAR NPN TRANSISTOR | KEC |
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