PDF AO3413 Data sheet ( Hoja de datos )

Número de pieza	AO3413
Descripción	20V P-Channel MOSFET
Fabricantes	Alpha & Omega Semiconductors
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No Preview Available ! AO3413 20V P-Channel MOSFET General Description The AO3413 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. Features VDS = -20V ID = -3A RDS(ON) < 80mΩ RDS(ON) < 100mΩ RDS(ON) < 130mΩ (VGS = -4.5V) (VGS =- 4.5V)-15 (VGS = -2.5V) (VGS = -1.8V) SOT23 Top View Bottom View D D D S G G S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current A TA=70°C Pulsed Drain Current B ID IDM TA=25°C Power Dissipation A TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum -20 ±8 -3 -2.4 -15 1.4 0.9 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Typ 70 100 63 Max 90 125 80 Units V V A W °C Units °C/W °C/W °C/W Rev 9: July 2010 www.aosmd.com Page 1 of 5 1 page AO3413 VDC Vgs Ig Vds Vgs Rg Vgs Gate Charge Test Circuit & Waveform Vgs -10V Qg VDC DUT Vds Qgs Qgd Resistive Switching Test Circuit & Waveforms RL Vgs ton td(on) t r toff t d (o ff) tf DUT Vdd VDC Vds Charge 90% 10% Vds + Vds - Isd Vgs Ig DUT L Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vgs + Vdd VDC - -Isd -Vds -I F trr dI/dt -I RM Vdd Rev 9: July 2010 www.aosmd.com Page 5 of 5 5 Page

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