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DMC3021LSD PDF даташит

Спецификация DMC3021LSD изготовлена ​​​​«Diodes» и имеет функцию, называемую «COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET».

Детали детали

Номер произв DMC3021LSD
Описание COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Производители Diodes
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DMC3021LSD Даташит, Описание, Даташиты
DMC3021LSD
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Device
Q2
Q1
V(BR)DSS
30V
-30V
RDS(on) max
21mΩ @ VGS = 10V
32mΩ @ VGS = 4.5V
39mΩ @ VGS = -10V
53mΩ @ VGS = -4.5V
ID Max
TA = +25°C
8.5A
7.2A
-7A
-5.6A
Description and
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
Power Management Functions
Analog Switch
Load Switch
Features
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Complementary Pair MOSFET
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See Diagram
Terminals: Finish - Matte Tin annealed over Copper lead frame
Solderable per MIL-STD-202, Method 208 e3
Weight: 0.072 grams (approximate)
SO-8 D2 D1
Top View
S2
G2
S1
G1
Top View
D2
D2
D1
D1
G2 G1
S2
N-Channel MOSFET
S1
P-Channel MOSFET
Ordering Information (Note 4)
Notes:
Part Number
DMC3021LSD-13
Case
SO-8
Packaging
2500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
85
C3021LD
YY WW
14
Chengdu A/T Site
DMC3021LSD
Document number: DS32152 Rev. 2 - 2
85
C3021LD
YY WW
14
Shanghai A/T Site
= Manufacturer’s Marking
C3021LD = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 14 = 2014)
WW = Week (01 - 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)
1 of 8
www.diodes.com
February 2014
© Diodes Incorporated









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DMC3021LSD Даташит, Описание, Даташиты
DMC3021LSD
Maximum Ratings N-CHANNEL – Q2 (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5)
Pulsed Drain Current (Note 6)
Characteristic
Steady
State
TA = +25°C
TA = +85°C
Symbol
VDSS
VGSS
ID
IDM
Value
30
±20
8.5
7.1
26
Unit
V
V
A
A
Maximum Ratings P-CHANNEL – Q1 (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5)
Pulsed Drain Current (Note 6)
Characteristic
Steady
State
TA = +25°C
TA = +85°C
Symbol
VDSS
VGSS
ID
IDM
Value
-30
±20
-7.0
-4.5
-25
Unit
V
V
A
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
2.5
50
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics N-CHANNEL – Q2 (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 7)
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Symbol Min
BVDSS
IDSS
IGSS
VGS(th)
RDS (ON)
|Yfs|
VSD
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
30
1
Typ Max
——
— 1.0
— ±100
1.45
14
18
8.1
0.7
2.1
21
32
1.0
767 —
110 —
105 —
1.4 —
7.8 —
16.1 —
1.8 —
2.5 —
5.0 —
4.5 —
26.3 —
8.55 —
Unit Test Condition
V VGS = 0V, ID = 250μA
µA VDS = 30V, VGS = 0V
nA VGS = ±20V, VDS = 0V
V VDS = VGS, IC = 250μA
mVGS = 10V, IC = 7A
VGS = 4.5V, IC = 5.6A
S VDS = 5V, IC = 7A
V VGS = 0V, IS = 1A
pF
pF
VDS = 10V, VGS = 0V,
f = 1.0MHz
pF
VDS = 0V, VGS = 0V, f = 1MHz
nC
nC
nC VDS = 15V, ID = 9A
nC
ns
ns VGS = 10V, VDS = 15V,
,ns RG = 6ID = 1A
ns
Notes:
5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Repetitive rating, pulse width limited by junction temperature.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMC3021LSD
Document number: DS32152 Rev. 2 - 2
2 of 8
www.diodes.com
February 2014
© Diodes Incorporated









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DMC3021LSD Даташит, Описание, Даташиты
30
25 VGS = 8.0V
VGS = 4.5V
20 VGS = 3.0V
15
10
VGS = 2.5V
5
0
0 0.5
VGS = 2.0V
1 1.5 2
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
1
0.1
VGS = 2.5V
0.01
0
1.6
VGS = 4.5V
5 10 15 20 25
ID, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
30
1.4
DMC3021LSD
30
25 VDS = 5V
20
15
10
5
0
0
0.06
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
TA = -55°C
123
VGS, GATE SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
4
0.05
VGS = 4.5V
0.04
0.03
0.02
0.01
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
TA = -55°C
0
0 5 10 15 20 25 30
ID, DRAIN CURRENT (A)
Fig. 4 Typical Drain-Source On-Resistance
vs. Drain Current and Temperature
0.05
0.04
1.2
1.0 VGS = 4.5V
ID = 10A
0.8 VGS = 10V
ID = 11.6A
0.6
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
0.03
0.02
VGS = 4.5V
ID = 10A
0.01
VGS = 10V
ID = 11.6A
0
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
DMC3021LSD
Document number: DS32152 Rev. 2 - 2
3 of 8
www.diodes.com
February 2014
© Diodes Incorporated










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