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PDF FCPF220N80 Data sheet ( Hoja de datos )
| Número de pieza | FCPF220N80 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Fairchild Semiconductor | |
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FCPF220N80
N-Channel SuperFET® II MOSFET
800 V, 23 A, 220 m
May 2015
Features
• Typ. RDS(on) = 188 m
• Ultra Low Gate Charge (Typ. Qg = 78 nC)
• Low Eoss (Typ. 7.5 uJ @ 400 V)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 304 pF)
• 100% Avalanche Tested
• RoHS Compliant
• ESD Improved Capability
Applications
• AC-DC Power Supply
• LED Lighting
Description
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. This technology is tailored
to minimize conduction loss, provide superior switching perfor-
mance, dv/dt rate and higher avalanche energy. Consequently,
SuperFET II MOSFET is very suitable for the switching power
applications such as PFC, server/telecom power, FPD TV
power, ATX power and industrial power applications.
D
GDS
TO-220F
G
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
Parameter
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- DC
- AC
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature.
Thermal Characteristics
S
(f >1 Hz)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Symbol
RJC
RJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
©2015 Fairchild Semiconductor Corporation
FCPF220N80 Rev. 1.1
1
FCPF220N80
800
±20
±30
23*
14.6*
57*
645
4.6
27.8
100
20
44
0.35
-55 to +150
300
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
FCPF220N80
2.8
62.5
Unit
oC/W
www.fairchildsemi.com
1 page  
Typical Performance Characteristics (Continued)
Figure 12. Transient Thermal Response Curve
5
0.5
1
0.2
0.1
0.05
0.1
0.02
0.01
0.01
Single pulse
0.001
10-5
10-4
PDM
t1
t2
*Notes:
1. ZJC(t) = 3.15oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZJC(t)
10-3
10-2
10-1
1
t1, Rectangular Pulse Duration [sec]
10 100
©2015 Fairchild Semiconductor Corporation
FCPF220N80 Rev. 1.1
5
www.fairchildsemi.com
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| PDF Descargar | [ Datasheet FCPF220N80.PDF ] | |
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