FCD850N80Z Datasheet PDF - Fairchild Semiconductor
| Part Number | FCD850N80Z | |
| Description | MOSFET ( Transistor ) | |
| Manufacturers | Fairchild Semiconductor | |
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October 2014
FCD850N80Z / FCU850N80Z
N-Channel SuperFET® II MOSFET
800 V, 6 A, 850 m
Features
• Typ. RDS(on) = 710 mTyp.)
• Ultra Low Gate Charge (Typ. Qg = 22 nC)
• Low Eoss (Typ. 2.3 uJ @ 400V)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 106 pF)
• 100% Avalanche Tested
• RoHS Compliant
• ESD Improved Capability
Applications
Description
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. This technology is tailored
to minimize conduction loss, provide superior switching
performance, dv/dt rate and higher avalanche energy. In
addition, internal gate-source ESD diode allows to withstand
over 2kV HBM surge stress.Consequently, SuperFET II
MOSFET is very suitable for the switching power applications
such as Audio, Laptop adapter, Lighting, ATX power and
industrial power applications.
• AC - DC Power Supply
• LED Lighting
D
D
G
S
D-PAK
G DS
Absolute Maximum Ratings TC=25oCunlessotherwisenoted.
I-PAK
G
Symbol
Parameter
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt
Peak Diode Recovery dv/dt
Power Dissipation
- DC
- AC
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
(TC = 25oC)
- Derate Above 25oC
(f > 1 Hz)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RJC
RJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
©2014 Fairchild Semiconductor Corporation
FCD850N80Z / FCU850N80Z Rev. C0
1
S
FCD850N80Z
FCU850N80Z
800
±20
±30
6
3.8
18
114
1.2
0.284
100
20
75
0.6
-55 to +150
300
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
FCD850N80Z
FCU850N80Z
1.65
100
Unit
oC/W
www.fairchildsemi.com
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Typical Performance Characteristics (Continued)
Figure 12. Transient Thermal Response Curve
2
1 0.5
0.2
0.1
0.1 0.05
0.02
0.01
Single pulse
0.01
10-5
PDM
t1
t2
*Notes:
1. ZJC(t) = 1.65oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZJC(t)
10-4
10-3
10-2
10-1
t1, Rectangular Pulse Duration [sec]
1
©2014 Fairchild Semiconductor Corporation
FCD850N80Z / FCU850N80Z Rev. C0
5
www.fairchildsemi.com
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for FCD850N80Z electronic component. |
| Information | Total 10 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ FCD850N80Z.PDF Datasheet ] | |
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