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FDD5N50U PDF даташит

Спецификация FDD5N50U изготовлена ​​​​«Fairchild Semiconductor» и имеет функцию, называемую «MOSFET ( Transistor )».

Детали детали

Номер произв FDD5N50U
Описание MOSFET ( Transistor )
Производители Fairchild Semiconductor
логотип Fairchild Semiconductor логотип 

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FDD5N50U Даташит, Описание, Даташиты
FDD5N50U
N-Channel UniFETTM Ultra FRFETTM MOSFET
500 V, 3 A, 2.0 Ω
November 2013
Features
• RDS(on) = 1.65 Ω (Typ.) @ VGS = 10 V, ID = 1.5 A
• Low Gate Charge (Typ. 11 nC)
• Low Crss (Typ. 5 pF)
• 100% Avalanche Tested
• RoHS Compliant
Applications
• LCD/LED/PDP TV
• Lighting
• Uninterruptible Power Supply
Description
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. UniFET Ultra FRFETTM MOSFET has much
superior body diode reverse recovery performance. Its trr is less
than 50nsec and the reverse dv/dt immunity is 20V/nsec while
normal planar MOSFETs have over 200nsec and 4.5V/nsec
respectively. Therefore UniFET Ultra FRFET MOSFET can
remove additional component and improve system reliability in
certain applications that require performance improvement of
the MOSFET’s body diode. This device family is suitable for
switching power converter applications such as power factor
correction (PFC), flat panel display (FPD) TV power, ATX and
electronic lamp ballasts.
D
G
S
D
D-PAK
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
FDD5N50UTM_WS
500
±30
3
1.8
12
275
3
4
4.5
40
0.3
-55 to +150
300
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FDD5N50UTM_WS
1.4
110
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
©2007 Fairchild Semiconductor Corporation
FDD5N50U Rev. C1
1
www.fairchildsemi.com









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FDD5N50U Даташит, Описание, Даташиты
Package Marking and Ordering Information
Part Number
FDD5N50UTM_WS
Top Mark
FDD5N50U
Package
DPAK
Packing Method
Tape and Reel
Reel Size
330 mm
Tape Width
16 mm
Quantity
2500 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250 μA, VGS = 0 V, TJ = 25oC
ID = 250 μA, Referenced to 25oC
VDS = 500 V, VGS = 0 V
VDS = 400 V, TC = 125oC
VGS = ±30 V, VDS = 0 V
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250 μA
VGS = 10 V, ID = 1.5 A
VDS = 20 V, ID = 1.5 A
Dynamic Characteristics
Ciss
Coss
Crss
Qg(tot)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDS = 25 V, VGS = 0 V,
f = 1 MHz
VDS = 400 V, ID = 5 A,
VGS = 10 V
(Note 4)
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 250 V, ID = 5 A,
VGS = 10 V, RG = 25 Ω
(Note 4)
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 3 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, ISD = 5 A,
dIF/dt = 100 A/μs
Notes:
1: Repetitive rating: pulse width limited by maximum junction temperature.
2: L = 61 mH, IAS = 3 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3: ISD 3 A, di/dt 200 A/μs, VDD BVDSS, starting TJ = 25°C.
4: Essentially independent of operating temperature typical characteristics.
Min.
500
-
-
-
-
3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.6
-
-
-
-
1.65
4
485
65
5
11
3
5
14
21
27
20
-
-
-
36
33
Max. Unit
-
-
25
250
±100
V
V/oC
μA
nA
5V
2.0 Ω
-S
650 pF
90 pF
8 pF
15 nC
- nC
- nC
38 ns
52 ns
64 ns
50 ns
3A
12 A
1.6 V
- ns
- nC
©2007 Fairchild Semiconductor Corporation
FDD5N50U Rev. C1
2
www.fairchildsemi.com









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FDD5N50U Даташит, Описание, Даташиты
Typical Performance Characteristics
Figure 1. On-Region Characteristics
10
VGS = 15.0V
10.0V
8.0 V
7.0 V
6.5 V
1
6.0 V
5.5 V
0.1
0.02
0.1
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
1 10
VDS,Drain-Source Voltage[V]
30
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
2.6
2.2
VGS = 10V
VGS = 20V
1.8
1.4
0
*Note: TJ = 25oC
6 12
ID, Drain Current [A]
18
Figure 5. Capacitance Characteristics
1000
800
600
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
*Note:
1. VGS = 0V
Ciss 2. f = 1MHz
400 Coss
200
0
0.1
Crss
1 10
VDS, Drain-Source Voltage [V]
30
Figure 2. Transfer Characteristics
10
150oC
25oC
1
0.1
4
*Notes:
1. VDS = 20V
2. 250μs Pulse Test
567
VGS,Gate-Source Voltage[V]
8
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
30
150oC
10
25oC
*Notes:
1. VGS = 0V
1 2. 250μs Pulse Test
0.4 1.0 1.6 2.2
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
VDS = 100V
VDS = 250V
8 VDS = 400V
6
4
2
*Note: ID = 5A
0
0 4 8 12
Qg, Total Gate Charge [nC]
©2007 Fairchild Semiconductor Corporation
FDD5N50U Rev. C1
3
www.fairchildsemi.com










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